Preparation method of copper indium gallium diselenide thin film solar cell absorbing layer

Abstract

The invention relates to a preparation method of a copper indium gallium diselenide thin film solar cell absorbing layer. The preparation method is characterized in that the preparation method comprises the following steps of: 1) preparing a CuIn<1-X>Ga<X>Se<2> layer on the bottom electrode of a substrate through radio-frequency magnetron sputtering by using a CuIn<1-X>Ga<X>Se<2> compound target; and 2) conducting annealing treatment to the substrate with the CuIn<1-X>Ga<X>Se<2> layer prepared in the step 1 to obtain a CuIn<1-X>Ga<X>Se<2> absorbing layer on the bottom electrode. Since the radio-frequency magnetron sputtering and heat treatment are adopted for preparing the absorbing layer on the bottom electrode of the substrate, the crystallization degree of the absorbing layer is improved, the size of crystal grains reaches micrometer-scale, the performance of the absorbing layer is improved, the performance of thin film solar cells can be effectively improved, the process is greatly simplified, the process repeatability is good and the process is controllable.

Description

technical field [0001] The invention belongs to the technical field of solar cell device preparation, in particular to a method for preparing an absorbing layer of a copper indium gallium selenium thin film solar cell. Background technique [0002] The compound semiconductor copper indium selenide (CuInSe) with chalcopyrite structure 2 , abbreviated as CIS) series of miscible crystals are direct bandgap materials, and thin-film solar cells using it as the absorber layer are considered to be one of the most promising third-generation compound photovoltaic cells. The composition includes: CuInSe 2 , CuIn 1－X Ga X Se 2 , CuInS 2 , CuIn 1 -XGa X S 2 , CuIn 1 - X Ga X Se 2－y S y Wait. The existing copper indium gallium selenide (sulfur) thin film solar cell is a new type of solar cell developed in the late 1980s. It is made of soda lime glass, metal foil (stainless steel foil, titanium foil, molybdenum foil, aluminum foil, etc.) or A photovoltaic device composed of ...

AI Technical Summary

Problems solved by technology

The second type of method has received widespread attention due to its advantages in industrialization. Among them, the selenization method after sputtering is the most widely used. Its technical characteristics are the use of single substance or alloy targets to sputter metal prefabricated films Cu-In-Ga, Then adopt hydrogen selenide or solid selenium source selenization, because hydrogen selenide is highly toxic and adopt the composition of the absorption layer thin film that solid selenium source then prepares to be difficult for controlling, make the performance of the absorption layer thin film of preparation low, cause the thin film solar cell of preparation low performance