Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method for three-dimensional metal micro-nanometer device

A micro-nano, metal technology, applied in the field of manufacturing micro-nano devices, can solve the problems of inability to flexibly design metal structures, limit the diversity of metal structures, limit the scope of application, etc., and achieve the effect of improving strength, low cost, and expanding functions

Active Publication Date: 2013-03-06
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
View PDF4 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above method of metallizing the polymer surface is to electroplate the polymer structure on the substrate and the entire substrate. It is impossible to selectively electroplate a certain part of the polymer structure, and then it is impossible to flexibly design the obtained metal structure. The variety of metal structures sexually restricted
In order to achieve selective electroplating of structures, the prior art often selects two photoresists with different adsorption capacities for electroplated metal particles to achieve selectivity. For example, in 2006, the John T.Fourkas research group in the United States used such a method Micron inductance devices have been prepared, see RichardA.Farrer et al., J.AM.CHEM.SOC., 2006, 128, 1796-1797, but due to the selection of a suitable photoresist to achieve the selectivity of electroplating, this limits the The scope of application of the method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method for three-dimensional metal micro-nanometer device
  • Preparation method for three-dimensional metal micro-nanometer device
  • Preparation method for three-dimensional metal micro-nanometer device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] The method for preparing a three-dimensional metal submicron inductor by using the step-by-step laser direct writing technology and the electrodeless electroplating process comprises the following steps:

[0058] 1) Using femtosecond laser direct writing technology to process the polymer scaffold structure, that is, the first structure.

[0059] Using the femtosecond laser processing system shown in Figure 3 in the document "Femtosecond pulsed laser two-photon micro-nano processing technology and its application, Science Bulletin, 2008, Volume 53, Issue 1, 2-13", the laser light source is selected for mode-locking The titanium-sapphire laser has a central wavelength of 780nm, a pulse width of 80fs, and a repetition rate of 80MHz. A shutter and an attenuator are placed in the optical path to adjust the exposure time and light intensity of the laser, and a 100x oil-immersion objective lens with a numerical aperture of 1.42 is used for focusing.

[0060] A negative photor...

Embodiment 2

[0075] The method for making wires according to the present invention will be described in detail below with reference to the accompanying drawings, including the following steps:

[0076] 1) Using femtosecond laser direct writing technology to form the first wire structure

[0077] Drop the negative photoresist SCR500 on the glass substrate. Use the femtosecond laser processing system and method described in Step 1) of Example 1 to scan and expose a cuboid structure with a length, width and height of 70 μm, 2 μm and 3.5 μm, respectively, as the first wire structure. The height stated herein is the distance of the resulting structure from the surface of the substrate. The exposed sample is placed in ethanol for development, and the unexposed part is washed away to obtain the polymer first wire structure.

[0078] 2) Surface activation of polymer structures

[0079] 0.5gSnCl 2Dissolve in the solution obtained by mixing 28ml of water and 2ml of hydrochloric acid to obtain an...

Embodiment 3

[0086] A method for manufacturing a resistor with lead wires by using step-by-step laser direct writing technology and an electrodeless plating process, comprising the following steps:

[0087] 1) Using femtosecond laser direct writing technology to process the first wire structure.

[0088] Drop the negative photoresist SCR500 on the glass substrate. Use the femtosecond laser processing system and method described in step 1) of Example 1 to scan and expose a cuboid structure with a length, width and height of 70 μm, 2 μm and 3.5 μm respectively as a wire structure, and place the exposed sample in ethanol for development , to wash away the unexposed parts to obtain the first structure of the polymer.

[0089] 2) Surface activation of polymer structures

[0090] 0.5gSnCl 2 Dissolve in the solution obtained by mixing 28ml of water and 2ml of hydrochloric acid to obtain an aqueous solution of divalent tin salt. The wire structure is soaked in the divalent tin salt aqueous sol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Resistanceaaaaaaaaaa
Login to View More

Abstract

The invention relates to a preparation method for a three-dimensional metal micro-nanometer device. The method comprises the steps: forming a first structure of a polymer in a first photoresist by utilizing femtosecond laser beam; activating the surface of the first structure of the polymer; covering the activated first structure of the polymer by a second photoresist; forming a second structure partially contacted with the first structure in the second photoresist by utilizing femtosecond laser beam to obtain a complex of the partially exposed and activated surface of the first structure; and carrying out electrodeless plating to the complex in electroplate solution, and forming a metal thin membrane on the exposed surface of the first structure to obtain the three-dimensional metal micro-nanometer device. The first structure and the second structure are respectively machined so as to accurately align on three dimensions, selective electroplating of micro-nanometer structure can be realized by combining electrodeless electroplating technique, and the three-dimensional metal micro-nanometer device with any three-dimensional metal micro-nanometer structure can be obtained.

Description

technical field [0001] The invention relates to a method for manufacturing a micro-nano device, in particular to a method for manufacturing a three-dimensional metal micro-nano device by combining a laser direct writing technique and an electrodeless electroplating process. Background technique [0002] With the in-depth research on micro-nano processing technology, three-dimensional micro-nano structure devices have gradually attracted the interest of more and more researchers in this field. The existing three-dimensional micro-nano structure processing methods mainly include self-assembly method, hierarchical assembly method, phase mask method, etc., but these existing methods have defects such as inability to process any three-dimensional micro-nano structure, complicated manufacturing process, and high cost. Therefore, there is a need for a three-dimensional micro-nano structure processing method that can realize true three-dimensionality, high efficiency and low cost. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B81C1/00
Inventor 段宣明贾雁鹏董贤子田野刘前赵震声
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com