Preparation method of thin-film solar cell component

A technology of solar cells and thin films, applied in the field of solar cells, can solve problems such as poor electrode density and surface roughness, and the influence of cell device efficiency

Active Publication Date: 2013-03-20
SHENZHEN INST OF ADVANCED TECH +1
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Problems solved by technology

However, the above-mentioned method for preparing the molybdenum thin film back electrode leads to poor density and surface roughness of t

Method used

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  • Preparation method of thin-film solar cell component

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preparation example Construction

[0027] see figure 1 , the preparation method of the thin-film solar cell assembly of an embodiment, comprises the steps:

[0028] Step S101 , preparing a molybdenum thin film on a substrate.

[0029] The substrate can be glass, such as soda lime glass. The preparation method can be DC magnetron sputtering method, radio frequency magnetron sputtering method, electron beam evaporation method and the like.

[0030] In one embodiment, the cleaned substrate (such as soda lime glass) can be placed in a vacuum with a certain background (such as 1×10 -5 Pa) coating device (such as DC magnetron sputtering chamber). Then adjust the working air flow (such as argon 10sccm), and adjust the air pressure (such as by adjusting the gate valve related to the vacuum pump to make the working pressure of the chamber 1~0.3Pa), adjust the sputtering power (such as 350~1000W), and start the magnetic Controlled sputtering coating. The thickness of the prepared molybdenum film is 0.5-1 μm.

[003...

Embodiment 1

[0039] Fabrication of copper indium selenide (CIS) thin film solar cell modules

[0040] The background vacuum is 1×10 -5 Put clean soda-lime glass in the DC magnetron sputtering chamber of Pa. Adjust the working pressure to 0.3Pa, adjust the power to 350W, and start magnetron sputtering to obtain the first molybdenum layer with a thickness of about 0.5 μm. Adjust the working pressure to 0.05Pa, adjust the power to 500W, and start magnetron sputtering to obtain a second molybdenum layer with a thickness of about 0.5 μm. The first molybdenum layer and the second molybdenum layer constitute a molybdenum thin film with a thickness of 1 μm.

[0041] After sputtering, the molybdenum thin film was transported to the vacuum heating annealing chamber in the vacuum system, and the temperature was raised to 450 ° C in 10 minutes, and after 15 minutes of heat preservation, it was naturally cooled to room temperature. That is to say, a molybdenum thin film suitable for use as a back el...

Embodiment 2

[0053] Fabrication of Copper Indium Gallium Selenide (CIGS) Thin Film Solar Cell Modules

[0054] The background vacuum is 1×10 -5 Put clean soda-lime glass in the DC magnetron sputtering chamber of Pa. Adjust the working pressure to 0.3Pa, adjust the power to 350W, and start magnetron sputtering to obtain the first molybdenum layer with a thickness of about 0.5 μm. Adjust the working pressure to 0.05Pa, adjust the power to 500W, and start magnetron sputtering to obtain a second molybdenum layer with a thickness of about 0.5 μm. The first molybdenum layer and the second molybdenum layer constitute a molybdenum thin film with a thickness of 1 μm.

[0055] After the sputtering is completed, the molybdenum film is transported to the vacuum heating annealing chamber in a vacuum system, and the temperature is raised to 580 ° C in 10 minutes, and after 15 minutes of heat preservation, it is naturally cooled to room temperature. That is to say, a molybdenum thin film suitable for ...

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Abstract

A preparation method of a thin-film solar cell component comprises the following steps: preparing a molybdenum thin film on a substrate; annealing the molybdenum thin film to form a molybdenum back electrode, wherein the annealing temperature is 400 DEG C to 580 DEG C and the annealing time is 5-15 minutes; and sequentially preparing a copper indium gallium diselenide or copper indium diselenide layer, a buffer layer, a window layer and a transparent conductive thin film on the molybdenum back electrode to form the thin-film solar cell component. In the above method, through annealing treatment, the molybdenum thin film is processed into the back electrode which is excellent in adhesion force, corrosion resistance and electric conductivity and suitable for the thin-film solar cell component. And through the improvement, the working efficiency of a device of the thin-film solar cell component is improved.

Description

technical field [0001] The invention relates to the field of solar cells, and more specifically, to a method for preparing a copper indium gallium selenium thin film solar cell module. Background technique [0002] As a clean, environmentally friendly, inexhaustible and renewable energy source, solar energy is of great significance in its development and application. Solar cell power generation is an effective means of converting solar energy into electrical energy. Thin-film solar cell modules, especially copper indium gallium selenide thin-film solar cell modules, are gradually occupying a place in the solar cell market due to their advantages of low cost, high efficiency, long life, and radiation resistance. [0003] Thin-film solar cell modules generally have the following structure: transparent conductive film / window layer / buffer layer / absorber layer / back electrode / substrate. Molybdenum thin film is widely used in scientific research and production as the back electro...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0224
CPCY02P70/50
Inventor 童君杨春雷肖旭东
Owner SHENZHEN INST OF ADVANCED TECH
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