Efficient and energy saving laminated thin-film solar cell and manufacturing method

A solar cell, high-efficiency and energy-saving technology, applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve problems such as battery failure, and achieve the effect of simple manufacturing process, reduced production cost, and easy mass production

Active Publication Date: 2013-04-03
李毅
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, an important problem faced in mass production is: whether laser or mechanical is used to scribe the P1, P2, P3 channels to form the internal series connection of the battery, the process will affect the cross-section of the transpar

Method used

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  • Efficient and energy saving laminated thin-film solar cell and manufacturing method
  • Efficient and energy saving laminated thin-film solar cell and manufacturing method
  • Efficient and energy saving laminated thin-film solar cell and manufacturing method

Examples

Experimental program
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Example

[0051] example 1, figure 2 with diagram 2-1 Is a diagram of embodiment 1 of the present invention

[0052] Ultra-white glass is used as the substrate, the copper indium gallium selenium bottom cell is prepared by a multi-element co-evaporation three-step method, the cadmium telluride intermediate cell is prepared by magnetron sputtering, and the amorphous silicon top cell is prepared by plasma enhanced chemical vapor deposition technology. , Among them, the first intermediate layer uses a BZO transparent conductive film, and the second intermediate layer uses a low-conductivity silicon oxide transparent film.

[0053] Made as follows:

[0054] Ultra-white glass is used as the deposition substrate 1 of the three-layer thin-film battery of the present invention. After ultrasonic cleaning and automatic optical detection of defects, a DC magnetron sputtering method is adopted on one side of it, and the argon pressure is adjusted in turn at high pressure. Deposit a layer of high-resist...

Example

[0078] Example 2

[0079] Ultra-white glass is used as the substrate 1, the bottom battery 6 is prepared by the two-step method of multi-element co-evaporation, the middle battery 10, the cadmium telluride battery is prepared by magnetron sputtering, and the amorphous silicon top battery is prepared by plasma enhanced chemistry It is prepared by vapor deposition technology, wherein the first intermediate layer adopts a low-conductivity silicon oxide transparent film, and the second intermediate layer adopts an AZO transparent conductive film.

[0080] After the deposition substrate 1, after ultrasonic cleaning and automatic optical detection of defects, a DC magnetron sputtering method is used on one side of the substrate 1, and a layer of high-resistance molybdenum (Mo) layer is sequentially deposited under high pressure by adjusting the argon pressure. Deposit a low-resistance molybdenum (Mo) layer under low pressure with a total thickness of 1.5 μm to form the back contact layer...

Example

[0101] Example 3

[0102] Stainless steel is used as a flexible substrate, copper indium gallium selenium bottom battery 6, prepared by electrodeposition, cadmium telluride intermediate battery 10, prepared by magnetron sputtering method, amorphous silicon top battery 19 is prepared by plasma enhanced chemical vapor deposition method In preparation, the first intermediate layer 7 adopts an AZO transparent conductive film, and the second intermediate layer 11 adopts a low-conductivity transparent silicon oxide film.

[0103] The substrate 1 of the three-stack thin film battery of the present invention is made of stainless steel, ultrasonically cleaned, and a DC magnetron sputtering method is used on one side. By adjusting the argon pressure, a layer of high-resistance molybdenum (Mo ) Layer, and then deposit a low-resistance molybdenum (Mo) layer under low pressure with a total thickness of 2 μm to form the bottom battery back contact layer 2;

[0104] The bottom cell is on the back ...

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Abstract

The invention discloses an efficient and energy saving laminated thin-film solar cell and a manufacturing method, and belongs to the field of solar photovoltaic manufacture. Sensitive cell materials for absorbing blue, green and red light in solar spectra in a matched manner are selected, and the conversion efficiency of a three-junction thin-film cell is close to that of crystal silicon cells by 15%. The forbidden bandwidth of an intrinsic layer of a top amorphous silicon cell is 1.7-1.8eV, the forbidden bandwidth of cadmium telluride of a middle cell is 1.45eV, and the forbidden bandwidth of a copper indium gallium selenium absorbing layer of a bottom cell is about 1.05eV. Middle layers (7 and 11) are introduced to increase a light path, a light trap is formed, and light absorbing efficiency is improved by front and rear shielding wires (23 and 24). Serial short circuit inside a cell module is decreased, and cost and product reject ratio are reduced.

Description

technical field [0001] The invention discloses an amorphous silicon-cadmium telluride (CdTe)-copper indium gallium selenide (CIGS) battery forming a high-efficiency and energy-saving stacked thin-film solar battery, which belongs to the field of photovoltaic solar battery manufacturing. Background technique [0002] At present, commercialized crystalline silicon solar cells are the mainstream in the photovoltaic market, and the conversion efficiency of cell modules has reached more than 15%. However, the cost and energy consumption in the production process are high, and the room for improving the conversion efficiency of crystalline silicon is limited, and the development is slow. In contrast, thin-film solar cells have the characteristics of low cost and environmental friendliness. Amorphous silicon cells have become the most mature silicon-based thin-film solar cell industry, with a conversion efficiency of more than 10%, an absorption coefficient 1-2 orders of magnitude...

Claims

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Application Information

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IPC IPC(8): H01L31/078H01L31/0232H01L31/0216H01L31/20H01L31/054
CPCY02E10/52Y02P70/50
Inventor 李毅
Owner 李毅
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