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Water-soluble resin component used for forming subtle patterns and method for forming subtle patterns by using the same

A technology of water-soluble resin and water-soluble polymer, which is used in the field of surface coating film to stably form fine patterns in semiconductor processes, and can solve the problem of insufficient contact hole pattern coating performance, inability to adjust crosslinking thickness, etc. problem, to achieve the effect of increased miniaturization, increased reliability, stability and high efficiency

Active Publication Date: 2013-06-26
SK MATERIALS PERFORMANCE CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is insufficient to meet the coating performance of contact hole patterns that are gradually integrated and miniaturized, and there is also a problem that the cross-linking thickness cannot be adjusted according to the heating temperature when the heating process is performed

Method used

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  • Water-soluble resin component used for forming subtle patterns and method for forming subtle patterns by using the same
  • Water-soluble resin component used for forming subtle patterns and method for forming subtle patterns by using the same
  • Water-soluble resin component used for forming subtle patterns and method for forming subtle patterns by using the same

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example 1

[0077] Acrylamide polymer monomer (acrylamide) 10.0 grams, hydroxyethylacrylamide (hydroxyethylacrylamide) 7.3 grams, γ-butyrolactylmethacrylate (γ-butyrolactylmethacrylate) 9.5 grams, dimethylaminopropyl methacrylamide 10.1 g of (dimethylaminopropylmethacrylamide) and 40.9 g of 1,4-dioxane (dioxane) were added together into a 500 ml 3-neck flask for dissolution. Then with a 250 ml flask, 4 grams of norbornene and 2.0 grams of polymerization initiator dimethylazisobutyric acid (dimethylazobisobutylate) were dissolved together with 94.2 grams of 1,4-dioxane (dioxane) At the same time, pour nitrogen gas flow protection at room temperature, and stir for 1 hour. The temperature of the reaction tank was kept at 65 degrees, and the solution in the 250 ml flask was slowly dripped over an hour using a syringe pump. Also, after 10 hours of polymerization at this temperature, the solution was cooled to room temperature. The reaction solution was cooled to room temperature, precipitate...

Synthetic example 2

[0081] 11.2 grams of acrylamide for polymerization, 8.9 grams of 5-methacryloyloxy-2,6-norbornane carbonyl lactone, dimethylaminoacrylic acid Add 7.3 grams of dimethylaminoethylacrylate, 10.1 grams of dimethylaminopropylmethacrylamide and 41.5 grams of 1,4-dioxane (dioxane) into a 500 ml 3-necked flask, and dissolve them first . Subsequently, 4.0 grams of norbornene, 2.0 grams of polymerization initiator dimethylazobisobutylate (dimethylazobisisobutylate) and 94.2 grams of 1,4-dioxane were added to a 250-milliliter flask, and stirred at room temperature for 1 hour under nitrogen gas flow protection. . The temperature of the reaction group was kept at 65 degrees, and the solution in the 250 ml flask was slowly dripped over an hour using a syringe pump. Also, after 10 hours of polymerization reaction at this temperature, the reaction-finished solution was cooled to room temperature. The reaction mixture cooled to room temperature was precipitated with excess n-hexane solvent ...

Synthetic example 3

[0085] 10.0 grams of polymerized acrylamide monomer (acrylamide) for polymerization, 9.5 grams of hydroxyethylacrylamide (hydroxyethylacrylamide), 5-methacryloyloxy-2,6-norbornane carbonyl lactone (5-methacryloyloxy-2, Add 8.1 grams of 6-norbornane carbolactone, 10.1 grams of dimethylaminoethylmethacrylate (dimethylaminoethylmethacrylate) and 41.7 grams of 1,4-dioxane (dioxane) into a 500 ml 3-neck flask and dissolve them first . Subsequently, 4.0 grams of norbornene (norbornene), 2.0 grams of polymerization initiator dimethylazobisisobutylate (dimethylazobisisobutylate) and 94.2 grams of 1,4-dioxane (dioxane) were added to a 250-milliliter flask, and nitrogen flow Stir at room temperature under protection for 1 hour. The temperature of the reaction tank was kept at 65 degrees, and the solution in the 250 ml flask was slowly dripped over an hour using a syringe pump. Also, after 10 hours of polymerization reaction at this temperature, the reaction-finished solution was coole...

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Abstract

The present invention relates to a water-soluble resin component used for forming subtle patterns, which performs painting and heat treatment on a light resisting film forming a contact hole pattern to reduce the size of a contact hole. The water-soluble resin component comprises: water-soluble polymer represented by the following [chemical formula 1] and a first water-soluble solvent; wherein, in the [chemical formula 1], R1, R2, R3, R4 and R6 are respectively C1-30 alkyl group or C3-30 naphthenic group comprising independent hydrogen, ether group, hydroxyl group, ester group, carbonyl group, acetyl group, epoxy group, nitrile group, amido group, inner ester group, or aldehyde group, wherein R3 is not equal to R4, R5, R7, R8, R9, and R10 are respectively independent hydrogen or methyl group, n is an integral number from 0 to 5, a is a real number from 0.05 to 0.5, b, c, d and e are respectively real numbers less than 0.7, a, b, c, d and e satisfy the condition of a+b+c+d+e=1.

Description

technical field [0001] The present technology relates to a resin composition for forming a fine pattern, and also relates to a method for stably forming a fine pattern in a semiconductor process by using the resin composition as a top coat film of a photoresist. Background technique [0002] With the development of high-performance and highly integrated semiconductor devices and photolithography processes, the development of various photoresists is also accelerating. Although the chemically amplified photoresist corresponding to the rule refinement has also been developed along with these requirements for high integration and high performance, the minimum resolution available for the ArF lithography equipment used is only about 0.05 μm. Because of this, the challenges to be overcome in forming fine patterns for the fabrication of integrated semiconductor devices have been explored through various methods. [0003] The resist thermal reflow method that has been used so far t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/00
CPCC09D133/26G03F7/40G03F7/405C09D145/00G03F7/26G03F7/00C08F220/10C08F232/08B05D3/0254
Inventor 朴相昱田钟振
Owner SK MATERIALS PERFORMANCE CO LTD