Method for preparing p-type ZnO nanowire

A p-type, nanotechnology, applied in the direction of nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve the problems affecting the performance of devices, the quality of nano zinc oxide crystals is not high, etc., to achieve good repeatability, crystal Good quality, simple operation effect

Inactive Publication Date: 2013-07-10
CHANGCHUN UNIV OF SCI & TECH
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Problems solved by technology

However, due to the introduction of impurities, the crystal quality of the obtai

Method used

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  • Method for preparing p-type ZnO nanowire
  • Method for preparing p-type ZnO nanowire

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[0007] Example one:

[0008] 1. Deposit a ZnO film as a seed layer on a cleaned silicon substrate by ALD method. The substrate temperature of the reaction chamber is 170℃, the pulse time (pulse) of the precursor source diethylzinc and water is 0.02s, the nitrogen flushing time (waiting) is 0.5s, and the cycle period is 1000 times; 2. Water heat on it Method to grow ZnO nanorods. Prepare 200ml of a mixed aqueous solution of zinc acetate and hexamethylenetetramine with a concentration of 0.01M, place the aqueous solution and the above-mentioned sinking bottom in the reactor, the amount of solution is two-thirds of the capacity of the reactor, and place the reactor in a blast Keep it in a drying oven at 90°C for 24h; 3. Take out the above sample and rinse it with deionized water for 10s, then place it in the air and dry it naturally and then perform annealing at 400°C for half an hour to remove excess salt and other impurities on the surface of the nanorods; , Use the ALD method t...

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Abstract

The invention relates to a method for preparing a non-doped nano p-type ZnO (p-ZnO) nanowire based on a proliferation principle of the Kirkendall effect and a core-shell structure, belonging to the technical field of nanomaterials. The method comprises the following main processes of: growing a ZnO nanorod array on a silicon substrate attached with ZnO seed crystals by using a hydrothermal method; then depositing an alumina thin layer and a ZnO thin layer by using an atomic layer deposition technology, and coating on the surface of a nanorod to form a ZnO/Al2O3/ZnO multilayer structure, wherein the thickness of the thin layers is less than the radius of the nanorod; annealing the multilayer structure for 3 hours at a high temperature of 700 DEG C; diffusing Zn ions in ZnO into alumina to form a structure of zinc aluminate coating ZnO, and meanwhile, forming an acceptor vacancy in a ZnO nanorod; and displaying characteristics of p-type ZnO shown in drawings in the specification.

Description

technical field [0001] The invention relates to a method of preparing non-doped nanometer p-type zinc oxide (p-ZnO) by using a core-shell structure based on the Kirkendall effect (Kirkendall) diffusion principle, and belongs to the technical field of nanomaterials. Background technique [0002] In recent years, ZnO has attracted attention in many fields such as light-emitting diodes, laser diodes, and photodetectors due to its large band gap and exciton binding energy. However, the long-lasting and reproducible p- ZnO remains a key issue to this day. Someone once doped nitrogen, phosphorus, arsenic, antimony and other elements in ZnO to obtain p-ZnO. However, due to the introduction of impurities, the crystal quality of the obtained nano zinc oxide is not high, which will affect the performance of the device. Chu et al. had prepared antimony-doped ZnO nanowires, which showed good electrical pump luminescent properties, and found that the nanorod structure of ZnO had more a...

Claims

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Application Information

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IPC IPC(8): C01G9/02B82Y30/00
Inventor 陈新影楚学影方芳李金华魏志鹏孙韶伟王晓华
Owner CHANGCHUN UNIV OF SCI & TECH
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