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Nonlinear optical devices fabricated from 4h silicon carbide crystals

A nonlinear optics and silicon carbide technology, applied in the field of materials, can solve problems such as nonlinear optical properties of 4H silicon carbide crystals that have not yet been seen, and achieve significant practical application value, high beam quality, and high chemical stability.

Active Publication Date: 2016-04-27
BEIJING TIANKE HEDA SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But so far, there have been no reports about the nonlinear optical properties of 4H silicon carbide crystals and the use of 4H silicon carbide crystals in the manufacture of nonlinear optical devices.

Method used

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  • Nonlinear optical devices fabricated from 4h silicon carbide crystals
  • Nonlinear optical devices fabricated from 4h silicon carbide crystals
  • Nonlinear optical devices fabricated from 4h silicon carbide crystals

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0045] The preparation method of the 4H silicon carbide crystal includes a physical vapor transport method, a high temperature chemical vapor deposition method or a liquid phase method. The inventors of the present invention have grown 4H silicon carbide crystals with high transmittance by the physical vapor transport method, and the transmittance spectrum is as follows: image 3 shown. However, it should be noted that high-transmittance 4H silicon carbide crystals can also be obtained by the high-temperature chemical vapor deposition method and the liquid-phase method using the above principles.

[0046] The inventor of the present invention has tested the refractive index of 4H silicon carbide crystals in the visible and infrared light bands (0.4047-2.325 μm) by the minimum deflection angle method, and the accuracy is about 3×10 -5 At the same time, the o-light refractive index of 4H silicon carbide crystal in the mid-infrared band (3-5μm) was measured by the arbitrary defl...

Embodiment 1

[0058] According to Embodiment 1 of the present invention, a nonlinear optical device adopts at least one beam of laser light as incident light, and after passing through at least one nonlinear optical crystal, generates at least one beam of laser output with a frequency different from the wavelength of the incident light. The nonlinear optical crystal is 4H silicon carbide crystal. The optical device realizes output of tunable mid-infrared laser through optical parametric amplification, optical parametric oscillation or difference frequency technology.

[0059] Figure 5 It is the working principle figure of embodiment 1 of the present invention, wherein laser device (11) emits an incident laser beam (12), and this incident laser beam passes through 4H silicon carbide crystal (13) and optical filter (15) successively, (14) is The laser beam emitted after passing through the 4H silicon carbide crystal (13) through processes such as optical parametric amplification, optical pa...

Embodiment 2

[0068] Embodiment 2 of the present invention is a tunable mid-infrared laser made of 4H silicon carbide crystal, the structural diagram is as follows Image 6 As shown, the tunable mid-infrared laser includes a first pump light source (21), a second pump light source (22), a laser synchronization device (23), a polarizer (24), a polarizer (25), an isolator ( 26), isolator (27), mirror (28), dichroic mirror (29), converging lens (210), 4H silicon carbide crystal (211), optical filter (212). The laser light emitted by the first pump light source passes through the polarizer (24), the isolator (26), the reflector (28), the dichroic mirror (29), the converging lens (210), and the 4H silicon carbide crystal (211) in sequence; The laser light emitted by the second pumping light source passes through the polarizer (25), the isolator (27), the dichroic mirror (29), the converging lens (210) and the 4H silicon carbide crystal (211) in sequence.

[0069] The wavelength of the first pum...

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Abstract

The invention relates to an NLO (Non-linear Optical) device made of 4H silicon carbide crystal. An NOL crystal is used for changing at least one beam of laser (12) with a specific frequency and generating at least one beam of laser (16) with another specific frequency which is different from the frequency, and is the 4H silicon carbide crystal (13). The 4H silicon carbide crystal has the characteristics of a very high laser-damaged threshold, a wider light transmitting range (from 0.38 mu m to 5.9 mu m and from 6.6 mu m to 7.08 mu m), a larger second order NLO coefficient (d 15 is equal to 6.7 pm / V), larger birefringence, high heat conductivity (490 Wm-1K-1), high chemical stability and the like, so that the NLO device disclosed by the invention can meet the actual application requirements for outputting an intermediate infrared laser with the high power and the high beam quality, and has a remarkable actual application value.

Description

technical field [0001] The invention relates to a nonlinear optical device made of 4H silicon carbide crystal, which belongs to the field of materials and the field of laser technology. Background technique [0002] The mid-infrared band (3-5μm) is an important window of the atmosphere. Lasers in this band have a strong ability to penetrate fog, smoke, etc. in the air. Therefore, lasers in this band can be used in military laser guidance and photoelectric countermeasures. and target detection. In addition, most hydrocarbon gases and other toxic gas molecules have strong absorption in the 3-5μm band. Therefore, mid-infrared lasers are also widely used in the fields of gas detection, atmospheric remote sensing and environmental protection. [0003] Due to the lack of direct laser gain medium, nonlinear frequency conversion such as optical parametric oscillation, optical parametric amplification and difference frequency is the main means to generate mid-infrared laser. In the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02F1/355G02F1/39C30B29/36H01S3/16
Inventor 陈小龙王顺冲彭同华王刚刘春俊王文军金士锋
Owner BEIJING TIANKE HEDA SEMICON CO LTD
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