Boron-doped graphene and preparation method thereof

A graphene and boron doping technology, which is applied in the field of boron-doped graphene and its preparation, can solve the problems of high oxygen content, inability to give full play to its advantages, low boron content of boron-doped graphene, etc., and achieve high boron content , Excellent mechanical strength, easy to control the content

Inactive Publication Date: 2013-11-06
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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Problems solved by technology

Although the high-temperature doping method is easy to scale up production, the boron-doped graphene prepared by this method has a low boron content and a high oxygen content, which cannot give full play to its advantages in semiconductor and energy storage materials; The study found that chemical vapor deposition method can obtain boron-doped graphene with higher boron content, and the boron content is easy to adjust

Method used

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  • Boron-doped graphene and preparation method thereof

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[0024] Combine below figure 1 The method for preparing boron-doped graphene of the present invention will be described. Such as figure 1 as shown, figure 1 It is a flowchart of the preparation method of boron-doped graphene of the present invention. The preparation method of boron-doped graphene of the present invention comprises the following steps:

[0025] ① Put the substrate into the anaerobic reaction chamber.

[0026] Before the substrate is placed in the anaerobic reaction chamber, preferably, the substrate is ultrasonically cleaned with deionized water, ethanol, and acetone, and then dried. Substrates include copper, iron or nickel foil. Put the substrate into the anaerobic reaction chamber, fill it with nitrogen, and use the mechanical pump, Roots pump and molecular pump in sequence to pump the chamber pressure of the anaerobic reaction chamber to 10 -3 Below Pa, keep it for 1 to 30 minutes, stop nitrogen filling, turn off the molecular pump, and start heating. ...

Embodiment 1

[0033] 1. Put the substrate into the reaction chamber, the substrate is copper foil, fill with nitrogen, and use mechanical pump, Roots pump and molecular pump to pump the reaction chamber to 10 -3 Pa below, and after maintaining for 30 minutes, stop filling nitrogen, turn off the molecular pump, and start heating.

[0034] 2. When the temperature of the copper foil reaches 1100°C, start to fill the reaction chamber with a mixture of gaseous carbon source and gaseous boron source. The gaseous carbon source is methane, and the gaseous boron source is boron trichloride. Keep the temperature constant and start to generate Boron doped graphene. Among them, gaseous carbon source flow: 150ml / min, gaseous boron source flow: 200ml / min.

[0035] 3. After reacting for 200 minutes, stop heating the copper foil and cool to room temperature to obtain boron-doped graphene. That is, the boron-doped graphene of the present invention is prepared.

Embodiment 2

[0037] 1. Put the substrate into the reaction chamber, the substrate is iron foil, fill with nitrogen, and use mechanical pump, Roots pump and molecular pump to pump the reaction chamber to 10 -3 Pa below, and after keeping for 20 minutes, stop filling nitrogen, turn off the molecular pump, and start heating.

[0038] 2. When the temperature of the iron foil reaches 1200°C, start to fill the reaction chamber with a mixture of gaseous carbon source and gaseous boron source. The gaseous carbon source is ethane, and the gaseous boron source is boron trichloride. Keep the temperature constant and start Generate boron doped graphene. Among them, gaseous carbon source flow: 180ml / min, gaseous boron source flow: 220ml / min.

[0039] 3. After reacting for 260 minutes, stop heating the iron foil and cool it down to room temperature to obtain boron-doped graphene. That is, the boron-doped graphene of the present invention is prepared.

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Abstract

The invention discloses a boron-doped graphene and a preparation method thereof. A chemical vapor deposition method is used for preparing the boron-doped graphene. The preparation method comprises the following steps: (1) placing a substrate in an oxygen-free reaction chamber; (2) heating the substrate to a temperature of 500 to 1300 DEG C; and (3) introducing a gaseous carbon source and a gaseous boron source into the oxygen-free reaction chamber and carrying out a reaction for 1 to 300 min so as to prepare the boron-doped graphene. The preparation method provided by the invention has the advantages of simple equipment, easy and practicable operation, low production cost, suitability for batch production and no usage of a metal catalyst; the prepared boron-doped graphene has the advantages of high purity, high and easily controllable boron content, uniform doping of boron, a high theoretical specific surface area, excellent mechanical strength, good flexibility and high conductivity and has good application prospects in photoelectron fields like illumination, display, laser and information and in energy fields.

Description

technical field [0001] The invention relates to the technical field of polymer materials, and more specifically, relates to a boron-doped graphene and a preparation method thereof. Background technique [0002] Since graphene was discovered in 2004, due to its two-dimensional monolayer structure and excellent physical properties, such as high theoretical specific surface area, excellent mechanical strength, good flexibility and high electrical conductivity, etc. Researchers are highly concerned about it, and it will bring about major changes in materials in the fields of electronics and energy. Moreover, graphene is very easy to derivatize, and its derivatives have also attracted extensive attention from researchers. Currently, graphene derivatives mainly include nitrogen-doped graphene and boron-doped graphene. Among them, boron-doped graphene is P-type doped, which has broad application prospects in the fields of semiconductors and energy storage materials. At present, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04C01B32/184
Inventor 周明杰钟辉王要兵
Owner OCEANS KING LIGHTING SCI&TECH CO LTD
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