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Preparation of three-dimensional dendritic titania arrays with fast electron transport properties

A three-dimensional dendritic, transmission performance technology, applied in the direction of titanium dioxide, titanium oxide/hydroxide, circuits, etc., can solve the problems of difficult crystal growth, reduce the electron transmission rate, etc., to improve short-circuit current, high electron transmission performance, improve The effect of specific surface area

Active Publication Date: 2015-12-23
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The one-step method can directly grow into a three-dimensional dendritic structure, but it is difficult to control the growth of the crystal; the two-step method first grows a one-dimensional structure, and then grows a branch structure by various methods. This method is better for controlling the shape of the nanostructure , but since the seed layer is often introduced on the one-dimensional structure in the second growth step to induce the growth of branched structures, it is inevitable to introduce some grain boundaries and defects, reducing the rate of electron transport

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  • Preparation of three-dimensional dendritic titania arrays with fast electron transport properties
  • Preparation of three-dimensional dendritic titania arrays with fast electron transport properties
  • Preparation of three-dimensional dendritic titania arrays with fast electron transport properties

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preparation example Construction

[0035] In a more typical embodiment of the present invention, the three-dimensional dendritic TiO with fast electron transport properties 2 The preparation method of the array may include the following steps:

[0036] (1) Deposit TiO on the cleaned transparent conductive glass by dipping and pulling method 2 For the seed layer, the sol used is a tetrabutyl titanate ethanol solution with a concentration of 0.4M, and then sintered in an air atmosphere.

[0037] Preferably, the transparent conductive glass used is fluorine-doped tin oxide (FTO) glass, the pulling rate is 100 mm / s, and the sintering temperature is 550 o C, the sintering time is 30min.

[0038] (2) Preparation of one-dimensional TiO by solvothermal method 2 array, put the cleaned transparent conductive glass deposited with the seed layer obtained in step (1) into a high-pressure reactor, and then add a certain proportion of Ti-containing reactants, hydrochloric acid and ketone solvents, and keep it at a certain te...

Embodiment 1

[0048] TiO will be deposited 2 The FTO glass of the seed layer was put into an autoclave, and 6mL of hydrochloric acid (37wt%), 6mL of 2-butanone and 0.4mL of tetrabutyl titanate were added, at 200 o C for 60 minutes, after cooling, the sample was taken out, rinsed with ethanol, soaked in a mixed solution of hydrogen peroxide and ammonia water at a volume ratio of 10:1 for 10 minutes, taken out and rinsed with deionized water. Put the processed sample into the reaction vessel, add 0.1mL of titanium trichloride hydrochloric acid solution (20wt% titanium trichloride dissolved in 2M hydrochloric acid), 0.2mL of hydrochloric acid (37wt%) and 10mL of deionized water, at 80 o C for 90 minutes, after cooling, the samples were taken out, rinsed with deionized water, and then processed in an oxygen plasma cleaning machine with an oxygen flow rate of 0.6 L / min, using a power of 50 W, and the processing time was 10 minutes. Finally, the sample was placed in an oxygen atmosphere with an ...

Embodiment 2

[0051] TiO will be deposited 2 The FTO glass of the seed layer was placed in an autoclave, and 6mL of hydrochloric acid (37wt%), 6mL of amyl ketone, and 0.6mL of tetrabutyl titanate were added, at 200 o C for 50 minutes, after cooling, the sample was taken out, rinsed with ethanol, soaked in a mixed solution of hydrogen peroxide and ammonia water at a volume ratio of 10:1 for 10 minutes, taken out and rinsed with deionized water. Put the processed sample into the reaction vessel, add 0.05mL of titanium trichloride hydrochloric acid solution (20wt% titanium trichloride dissolved in 2M hydrochloric acid), 0.1mL of hydrochloric acid (37wt%), 10mL of deionized water, o C heat preservation for 120min, after cooling, the samples were taken out, rinsed with deionized water, and then processed in an oxygen plasma cleaner with an oxygen flow rate of 1L / min, using a power of 50W, and the processing time was 10min. Finally, the sample was placed in an oxygen atmosphere with an oxygen fl...

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Abstract

The invention discloses a method for preparing a three-dimensional dendritic titanium dioxide array with fast electron transport performance, which includes: (1) using a hydrothermal method to grow a one-dimensional dendritic titanium dioxide array with fast electron transport performance on the surface of a conductive substrate deposited with a TiO2 seed layer. Nano-TiO2 rod array; (2) After the surface treatment of the one-dimensional nano-TiO2 rod array obtained in step (1), a three-dimensional dendritic structure is epitaxially grown on it by a water bath method without a seed layer; (3) for the step ( 2) The obtained samples with three-dimensional dendritic structure were sequentially cleaned by oxygen plasma and sintered in an oxygen atmosphere to obtain a three-dimensional dendritic TiO2 array nanostructure. The process of the invention is simple in operation, low in cost, strong in controllability, and has fewer grain boundaries and defects in the obtained TiO2 array, has high electron transmission rate and large specific surface area, can be used for photoanodes of photoelectric devices, and greatly improves The performance of the device has a good application prospect.

Description

technical field [0001] The invention particularly relates to a method for preparing a three-dimensional dendritic titanium dioxide array with fast electron transport performance, which can be applied to photoanodes of photoelectric devices and belongs to the field of photoelectric semiconductor materials. Background technique [0002] Photoelectric devices, such as solar cells, photocatalysis, photolysis of water to produce hydrogen, etc., can use clean and renewable energy to alleviate the current increasingly serious energy and environmental crises, and thus have attracted the attention of researchers all over the world. Nanostructured oxide semiconductors have been used as photoanodes in optoelectronic devices. Nanostructures have a large specific surface area, which can greatly enhance the capture and collection of electrons. On the other hand, the transport rate of electrons in the electrodes is also an important factor affecting the performance of optoelectronic devic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01M4/48C01G23/053H01G9/20H01G9/042B82Y30/00B82Y40/00
CPCY02E60/10
Inventor 盛夏封心建
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI