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Preparation method of composite structure material based on silicon-based porous silicon/tungsten oxide nanowires

A technology of tungsten oxide nanowires and composite structures, which is applied in the fields of nanotechnology, nanotechnology, and nanotechnology for materials and surface science, and can solve the There are few reports on the research on the composite structure of tungsten oxide nanowires, which achieves the effect of easy control of process parameters, convenient operation and simple equipment.

Inactive Publication Date: 2014-01-22
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Due to its unique synergistic effect, the nanocomposite structure has become the research focus in the field of nanometers in recent years. However, there are few studies based on the composite structure of silicon-based porous silicon and nanowires, and the research on the composite structure of silicon-based porous silicon and tungsten oxide nanowires is scarce. There are reports

Method used

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  • Preparation method of composite structure material based on silicon-based porous silicon/tungsten oxide nanowires
  • Preparation method of composite structure material based on silicon-based porous silicon/tungsten oxide nanowires
  • Preparation method of composite structure material based on silicon-based porous silicon/tungsten oxide nanowires

Examples

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Embodiment 1

[0030] 1) Clean the silicon substrate substrate:

[0031] A 2-inch p-type single-sided polished single-crystal silicon wafer with a resistivity of 10Ω·cm, a thickness of 400μm, and a (100) crystal orientation was cut into a rectangular silicon substrate with a size of 2.4cm×0.9cm, which was sequentially passed through concentrated sulfuric acid and Soak in hydrogen peroxide mixed solution for 30 minutes, soak in hydrofluoric acid aqueous solution for 20 minutes, ultrasonically clean with acetone solvent for 10 minutes, ultrasonically clean with absolute ethanol for 10 minutes, and ultrasonically clean in deionized water for 10 minutes.

[0032] 2) Preparation of silicon-based porous silicon:

[0033] A porous silicon layer was prepared on the polished surface of a silicon wafer by a double-tank electrochemical method. The corrosion electrolyte used is composed of 40% hydrofluoric acid and 40% dimethylformamide, the volume ratio is 1:2, no surfactant and additional light are a...

Embodiment 2

[0037] This example is similar to Example 1, except that: Step 3) silicon-based porous silicon is placed at a distance of 17 cm from the alumina ceramic boat in the direction of the gas outlet of the tube furnace to prepare a composite structure of silicon-based porous silicon and tungsten oxide nanowires , scanning electron microscopy analysis of its surface topography revealed a decrease in the density of tungsten oxide nanowires.

Embodiment 3

[0039] This example is similar to Example 1, except that: Step 3) silicon-based porous silicon is placed at a distance of 15 cm from the alumina ceramic boat in the direction of the gas outlet of the tube furnace to prepare a composite structure of silicon-based porous silicon and tungsten oxide nanowires , the results of scanning electron microscopy analysis of its surface topography show that the diameter of tungsten oxide nanowires increases.

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Abstract

The invention discloses a preparation method of a composite structure material based on a silicon-based porous silicon / tungsten oxide nanowires. The preparation method comprises the following steps: preparing a porous silicon layer on the surface of a substrate which is p-type monocrystalline silicon by adopting a double-groove electrochemical method; then preparing the silicon-based porous silicon / tungsten oxide nanowire composite structure material by adopting a chemical vapor deposition method and using tungsten powder as a tungsten source, wherein the flow rates of oxygen and argon are respectively 0.5sccm and 5sccm, the source temperature is 1100 DEG C, and the distance between the substrate and the tungsten powder is 15-17cm. The preparation method is simple and low in cost. The composite structure material based on the silicon-based porous silicon / tungsten oxide nanowires fills up the blank of composite structure materials based on porous silicon / oxide nanowires and has wide application prospect in the fields such as biosensing and optical sensing.

Description

technical field [0001] The invention relates to a nanocomposite structure material, in particular to a preparation method of a tungsten oxide nanowire and silicon-based porous silicon composite structure material. Background technique [0002] Nanotechnology is a priority area of ​​development in recent years, and nanodevices assembled from nanomaterials will bring revolutionary changes to various fields of science and technology. The use of different materials to prepare nano-composite materials can be well applied in the fields of chemistry, optics and electricity. Therefore, nano-composite structural materials have attracted more and more attention from researchers. [0003] Tungsten oxide is regarded as an N-type semiconductor, and is considered to be a semiconductor metal oxide sensitive material with great research and application prospects. In addition to being used as a catalyst, electrochromic, invisible material and solar absorbing material, tungsten oxide also ha...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/02C23C14/08C23C14/24B82Y40/00B82Y30/00
Inventor 胡明马双云崔珍珍李明达曾鹏武雅乔
Owner TIANJIN UNIV