Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing novel copper alloy material layer and film

A technology of copper alloy and material layer, applied in metal material coating technology, metal layered products, chemical instruments and methods, etc., can solve problems such as poor weather resistance, disconnection, electron migration, etc.

Active Publication Date: 2014-02-05
宁波荣宝雨半导体有限公司
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, pure silver and pure aluminum materials have poor weather resistance, and are prone to electron migration due to heat during future use. Long-term use will cause abnormal protrusions or disconnection of the film, resulting in reduced component life.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A method for preparing a new type of copper alloy material and thin film wiring, adopting a multi-layer structure design, firstly glass substrate, pure copper target material, copper alloy (Cu-15wt%Ni) and indium tin oxide (In2O3+5wt%SnO2) The target is placed in the vacuum sputtering machine, and the vacuum pumping system pumps the background pressure of the sputtering chamber to 0.7×10 -5 -0.9×10 -5 After torr, argon is used as the working gas, and argon is introduced through the throttle valve to control the working pressure of the sputtering chamber to be 3×10 -3 torr, the glass substrate is not heated. Then sputter the first layer of 25nm thick indium tin oxide with DC power supply sequence (In2O3+5wt%SnO2) thin film, the second layer of 100nm thick pure copper film, the third layer of 25nm thick copper alloy (Cu-15wt%Ni) thin film, that is, to form the required Glass / 95ITO / Cu / Cu-alloy multilayer film structure, using four The point probe resistance tester is...

Embodiment 2

[0025] A method for preparing a new type of copper alloy material and thin film wiring, adopting a multi-layer structure design, firstly glass substrate, pure copper target material, copper alloy (Cu-30wt%Ni) and indium tin oxide (In2O3+5wt%SnO2) The target is placed in the vacuum sputtering machine, and the vacuum pumping system pumps the background pressure of the sputtering chamber to 0.7×10 -5 -0.9×10 -5 After torr, argon is used as the working gas, and argon is introduced through the throttle valve to control the working pressure of the sputtering chamber to be 3×10 -3 torr, the glass substrate is not heated. Then sputter the first layer of 25nm thick indium tin oxide with DC power supply sequence (In2O3+5wt%SnO2) thin film, the second layer of 100nm thick pure copper film, the third layer of 25nm thick copper alloy (Cu-30wt%Ni) thin film, that is, to form the required Glass / 95ITO / Cu / Cu-alloy multilayer film structure, using four The point probe resistance tester is...

Embodiment 3

[0027] A method for preparing a new type of copper alloy material and thin film wiring, adopting a multi-layer structure design, firstly glass substrate, pure copper target, copper alloy (Cu-45wt%Ni) and indium tin oxide (In2O3+5wt%SnO2) The target is placed in the vacuum sputtering machine, and the vacuum pumping system pumps the background pressure of the sputtering chamber to 0.7×10 -5 -0.9×10 -5 After torr, argon is used as the working gas, and argon is introduced through the throttle valve to control the working pressure of the sputtering chamber to be 2×10 -3 torr, the glass substrate is not heated. Then sputter the first layer of 25nm thick indium tin oxide with DC power supply sequence (In2O3+5wt%SnO2) thin film, the second layer of 100nm thick pure copper film, the third layer of 25nm thick copper alloy (Cu-45wt%Ni) thin film, that is, to form the required Glass / 95ITO / Cu / Cu-alloy multilayer film structure, using four The point probe resistance tester is used for...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
transmittivityaaaaaaaaaa
Login to View More

Abstract

The invention provides a method for preparing a novel copper alloy material layer and film. The novel copper alloy material layer and film is matched with a transparent conducting film formed on glass or PET (polyethylene terephthalate) to form and a basic thin-film structure of a touch panel (base material / indium tin oxide (ITO) / Cu / Cu-alloy). The film can be sputtered to be formed in a low-temperature state of 150 DEG C and accords with use of glass and various flexible base materials. According to pure cupper sputtering coating, low resistance of wires is ensured, the weather resistance of the wires is improved by matching a copper alloy coating on the upper surface, a low-cost low-resistance high-weather resistance film structure is formed, the resistance value can be maintained to be below 6*10<-6>ohm cm, and the production requirements of upper electrodes or wires of touch screens and thin film photocells are met.

Description

technical field [0001] The invention relates to a novel copper alloy material and a method for preparing a thin film, belonging to the application fields of thin-film photovoltaic cells, liquid crystal televisions and touch screens. Background technique [0002] With the development of society and the rapid advancement of science and technology, the demand for functional materials is becoming increasingly urgent. New functional materials have become the key to the development of new technologies and emerging industries. With the development of industries such as displays, touch screens, semiconductors, and solar energy, a new functional material—transparent conducting oxide (TCO film for short)—is produced and developed. The so-called transparent conductive film refers to a film material with a light transmittance of more than 80% in the range of visible light, high conductivity, and a specific resistance value lower than 1x10 -3 Ω.cm. It is known that metals such as Au,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/06B32B15/04B32B9/04
Inventor 黄信二
Owner 宁波荣宝雨半导体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com