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Silica vessel for drawing up monocrystalline silicon and method for producing same

A silicon dioxide and monocrystalline silicon technology, applied in chemical instruments and methods, self-melting liquid pulling method, single crystal growth, etc., can solve problems such as pollution, single crystal silicon quality reduction, and oxygen concentration increase, and achieve low Cost, effect of improving etch resistance

Inactive Publication Date: 2014-04-02
SHIN ETABU QUARTZ PRODS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method does not completely reduce the corrosion (etching) of the silica crucible body caused by the silicon melt, thereby causing a large increase in the oxygen concentration of the silicon melt due to the dissolution of the silica glass, or Causes contamination of impurity metal elements contained in the silica crucible, resulting in a decrease in the quality of the pulled single crystal silicon

Method used

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  • Silica vessel for drawing up monocrystalline silicon and method for producing same
  • Silica vessel for drawing up monocrystalline silicon and method for producing same
  • Silica vessel for drawing up monocrystalline silicon and method for producing same

Examples

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Effect test

Embodiment 1）

[0102] according to image 3 The steps (1) to (6) shown produce a silica container for pulling a single crystal silicon. First, natural quartz powder having a particle diameter of 50 to 500 μm and a purity of 99.999 wt.% was prepared as raw material powder 11 .

[0103] Next, while using Figure 4 and Figure 5 The shown graphite frame 101 is rotated and the raw material powder 11 is put in to form the provisional molded body 41 . Next, use Figure 6 and Figure 7 In the shown device, the internal atmosphere of the temporary molded body 41 is made into a dry H 2 4vol%, N 2 96 vol % mixed gas, and discharge heating and melting were carried out inside the temporary molded body 41 while sucking and decompressing from the outer peripheral part. In this way, a silica container 71 was produced in which the outer side was a white opaque silica sintered body (opaque layer 51 ) and the inner side was a colorless transparent silica glass body (transparent layer 52 ). Next, use ...

Embodiment 2）

[0106] Except that the concentration of Ba coated on the entire surface of the inside surface of the cooled silica container 71 was changed to 480 μg / cm 2 Other than that, a silica container was produced in the same manner as in Example 1.

Embodiment 3）

[0108] In addition to setting the OH group concentration to 220 massppm when increasing the OH group concentration inside the transparent layer 52, and changing the Ba concentration coated on the entire inner surface of the cooled silica container 71 to 40 μg / cm 2 Other than that, a silica container was produced in the same manner as in Example 1.

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Abstract

This silica vessel is for drawing up monocrystalline silicon and has, at the inside, a transparent layer comprising transparent silica glass, and, at the outside, an opaque layer comprising opaque silica glass containing bubbles. The transparent layer is positioned at the inside surface side of the silica vessel, and comprises a high OH-group layer containing a concentration of 200-2000 mass ppm of OH groups and a low OH-group layer having a lower OH-group concentration than that of the high OH-group layer, Ba being applied at a concentration of 25-1000 mug / cm2 to the inner surface of the high OH-group layer. As a result, provided is a silica vessel such that when the silica vessel is used for drawing up monocrystalline silicon, the etching resistance (erosion resistance) of the vessel inner surface with respect to molten silicon is greatly increased by means of the entire surface of the inner surface comprising transparent silica glass of the vessel being micro-crystallized (glass-ceramicized) within a short period of time following the start of vessel use.

Description

technical field [0001] The invention relates to a silicon dioxide container for pulling monocrystalline silicon and a manufacturing method thereof. Background technique [0002] Silica glass is used as lenses, prisms, photomasks, TFT substrates for displays, tubes for ultraviolet lamps, window materials, reflectors, and semiconductors in projection exposure equipment (lithography equipment) for large-scale integrated circuit (LSI) manufacturing. Industrial cleaning containers, silicon melting containers, etc. However, expensive compounds such as silicon tetrachloride must be used as raw materials for these silica glasses, and the melting temperature and processing temperature of silica glasses are even as high as approximately 2000° C., so energy consumption and cost are high. Therefore, a method for producing silica glass using relatively cheap and natural powder raw materials has been considered. [0003] Currently, the manufacturing methods described in Patent Document ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B15/10C03B20/00
CPCC03B19/095C03B11/02C30B15/10C30B29/06C03B11/10Y02P40/57Y10T117/1032
Inventor 山形茂
Owner SHIN ETABU QUARTZ PRODS