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A method for metallizing an aluminum nitride ceramic plate

An aluminum nitride ceramic and sheet metal technology, applied in the field of ceramic metallization, can solve the problems of affecting the bonding force, low precision of copper foil thickness, low thermal conductivity, etc., achieve precise control and adjustment, increase process complexity, and control conditions simple effect

Active Publication Date: 2016-03-02
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

If the oxygen content is low, dense cuprous oxide or alumina cannot be formed; if the content is high, the oxide will be too thick, which will affect the bonding force, which makes the traditional direct copper clad process difficult to control and low yield
In addition, the copper layer used in the direct copper cladding method is copper foil, and the thickness accuracy of the copper foil is low, and the existence of an oxide intermediate layer with a low thermal conductivity may also reduce the thermal conductivity of the metallized aluminum nitride ceramics.

Method used

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  • A method for metallizing an aluminum nitride ceramic plate

Examples

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Embodiment 1

[0020] Such as figure 1 As shown, take an aluminum nitride ceramic plate 1 with a length of 10 cm, a width of 5 cm, and a thickness of 3 mm, one side of which is covered with high-temperature conductive glue, and the other side is used for titanium coating. Aluminum nitride ceramic plate 1 is cleaned and dried and placed in a vacuum magnetron sputtering coating machine. The vacuum degree of magnetron sputtering is controlled to 0.5Pa, the working gas is argon, the power of the power supply is 10KW, and the voltage is 100V. DC voltage, and the sputtering time is 20 minutes, so as to obtain a titanium conductive layer 2 with a thickness of 5 microns on the surface of the aluminum nitride ceramic plate 1 . Then it is cleaned and placed in an electrolytic cell containing acidic copper sulfate plating solution as the cathode, and the phosphor copper plate is used as the anode, wherein the surface area of ​​the phosphor copper plate is more than twice the surface area of ​​the plate...

Embodiment 2

[0022] Such as figure 1As shown, take an aluminum nitride ceramic plate 1 with a length of 10 cm, a width of 5 cm, and a thickness of 3 mm, one side of which is covered with high-temperature conductive glue, and the other side is used for titanium coating. After the aluminum nitride ceramic plate is cleaned and dried, it is placed in a vacuum magnetron sputtering coating machine. The vacuum degree of the magnetron sputtering is controlled to 0.5Pa, the working gas is argon, the power of the power supply is 10KW, and the voltage is 300V DC voltage, and the sputtering time is 5 minutes, so as to obtain a titanium conductive layer 2 with a thickness of 0.5 μm on the surface of the aluminum nitride ceramic plate 1 . Then it is cleaned and placed in an electrolytic cell containing acidic copper sulfate plating solution as the cathode, and the phosphor copper plate is used as the anode, wherein the surface area of ​​the phosphor copper plate is more than twice the surface area of ​​...

Embodiment 3

[0024] Such as figure 1 As shown, take an aluminum nitride ceramic plate 1 with a length of 10 cm, a width of 5 cm, and a thickness of 3 mm, one side of which is covered with high-temperature conductive glue, and the other side is used for titanium coating. After the aluminum nitride ceramic plate is cleaned and dried, it is placed in a vacuum magnetron sputtering coating machine. The vacuum degree of the magnetron sputtering is controlled to 0.5Pa, the working gas is argon, the power of the power supply is 10KW, and the sputtering time is 30min. Thus, a titanium conductive layer 2 with a thickness of 10 microns is obtained on the surface of the aluminum nitride ceramic plate. Then it is cleaned and placed in an electrolytic cell containing acidic copper sulfate plating solution as the cathode, and the phosphor copper plate is used as the anode, wherein the surface area of ​​the phosphor copper plate is more than twice the surface area of ​​the plated surface of the aluminum n...

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Abstract

The invention discloses a method for metalizing an aluminum nitride ceramic plate. The method comprises the following steps: firstly, forming a certain thickness of titanium conductive layer on the surface of the aluminum nitride ceramic plate by a physical vapor deposition method, and then electroplating a copper coating on the aluminum nitride ceramic plate of which the surface is coated with titanium by a chemical method; and finally, putting the aluminum nitride ceramic plate of which the surface is successively coated with the titanium conductive layer and the copper coating into a thermal treatment furnace, and successively forming TiN and TiCu metallurgical transition layers, so as to achieve metalizing of aluminum nitride ceramic. Compared with a manner of direct bonding copper, the method disclosed by the invention is simple in control condition and ready-made in equipment, meanwhile, combination of copper and aluminum nitride is not achieved by virtue of reaction of the oxide, the problems of bubbles, complicated procedures and the like of a bonding interface caused by non-elimination of the gas are avoided, and the yield of copper-coated metallization of the aluminum nitride ceramic plate is increased.

Description

technical field [0001] The invention belongs to the field of ceramic metallization, and relates to a method for coating a metal layer on the surface of an aluminum nitride ceramic plate. Background technique [0002] With the development of power electronic devices today, the new aluminum nitride ceramics (AlN) due to its good thermal conductivity (thermal conductivity can reach 150-300W / m K, 7~8 times that of alumina ceramics) and mechanical strength, no Toxic and side effects, as well as similar expansion coefficients with semiconductor materials such as silicon and germanium, have gradually replaced traditional packaging materials such as alumina and beryllium oxide ceramics. [0003] However, aluminum nitride ceramics are difficult to achieve direct connection with electronic chips, and the surface needs to be metallized, and metallization generally adopts the method of surface copper coating. The aluminum nitride ceramics coated with copper not only have good thermal c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C28/02C25D5/54
Inventor 郑精武陈思远陈淑文乔梁姜力强蔡伟应耀车声雷
Owner ZHEJIANG UNIV OF TECH