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A double-sided diffusion process for solar cells

A solar cell and double-sided diffusion technology, which is applied to circuits, photovoltaic power generation, electrical components, etc., can solve problems such as complex processes, easy denaturation, and complex components, so as to reduce the cost of process equipment, simplify the manufacturing process, and reduce manufacturing costs. Effect

Active Publication Date: 2016-07-13
JA SOLAR
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the coating liquid in the prior art has the disadvantages of being unstable, prone to denaturation, agglomeration, and sedimentation, and has complex components. It is used in a diffusion process with high cost and complicated process, which is not conducive to industrial production and combination with existing processes. use

Method used

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  • A double-sided diffusion process for solar cells
  • A double-sided diffusion process for solar cells
  • A double-sided diffusion process for solar cells

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0060] Such as Figures 1A-1G As shown, the double-sided diffusion process of the p-type crystalline silicon solar cell provided in this embodiment specifically includes the following steps: take the p-type crystalline silicon wafer 1001, remove the mechanical damage layer through chemical surface texturing, and remove the mechanical damage layer on the silicon wafer 1001. The surface of the sheet is cleaned with a 5% (wt) (mass percentage) dilute solution of hydrofluoric acid, and a nano-silica dispersion with a particle size of 90±50nm is used, and boron trioxide powder with a purity of 4N is added to Dilute with 18MΩ·cm deionized water, shake and mix evenly, spin-coat the dispersion on one side of the silicon wafer in a spin coater, which is the second surface of the so-called p-type silicon substrate, and dry at 200°C for 30min , solidify to form a coating 1201 containing impurity sources, and deposit a SiNx dielectric film 1202 with a thickness of 100 nm on the second sur...

Embodiment 2

[0062] Such as Figures 2A-2F As shown, the double-sided diffusion process of the p-type crystalline silicon wafer rear re-diffusion single-sided cell provided in this embodiment specifically includes the following steps: use the p-type crystalline silicon wafer 2001 to remove the mechanical damage layer at the same time through chemical surface texturing , the surface of the silicon wafer is cleaned with a 5% hydrofluoric acid dilute solution, a nano-silicon dioxide dispersion liquid with a particle size of 120±50nm is used, and boric acid with a purity of 99.8% is added, and deionized water of 18MΩ·cm Dilute and oscillate to mix evenly. Use ultrasonic atomization spraying to settle the mist droplets of the dispersion on one side of the silicon wafer, which is the second surface of the so-called p-type silicon substrate. Dry at 250°C for 20 minutes and solidify to form The coating 2201 containing the impurity source is deposited on the second surface with SiO with a thickness...

Embodiment 3

[0064] Such as Figures 3A-3F As shown, the double-sided diffusion process of the p-type crystalline silicon single-sided light-receiving cell provided in this embodiment specifically includes the following steps: the p-type crystalline silicon silicon wafer 3001 is chemically textured and the mechanical damage layer is removed at the same time. The surface of the silicon wafer is cleaned by a 5% dilute solution of hydrofluoric acid, a nano-silica dispersion with a particle size of 150±50nm is used, and boron trioxide powder with a purity of 4N is added, and 99.8% ethanol and deionized Dilute with water, shake and mix evenly, and deposit the dispersion liquid in the form of atomized droplets on the surface of one side of the silicon wafer, which is the second surface of the so-called p-type silicon substrate, by ultrasonic atomization spraying. The size of the template constrains the range of droplet deposition, so that the edge 3201' of the coating is finally smaller than the...

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Abstract

The invention discloses a double-faced diffusion technology of a solar battery. The technology comprises the following steps: (1) selecting a crystal silicon wafer, and washing a first surface and a second surface of the crystal silicon wafer after the flocking; (2) preparing an impurity coating on the second surface of the crystal silicon wafer; (3) preparing a protective layer on the impurity coating on the second surface of the crystal silicon wafer; and (4) performing high temperature boron diffusion or phosphorous diffusion on the crystal silicon wafer: performing high temperature boron re-diffusion or phosphorous re-diffusion on the second surface of the crystal silicon wafer, and then performing boron diffusion or phosphorous diffusion on the first surface of the crystal silicon wafer to form a p-n knot, so as to realize the double-faced diffusion of the crystal silicon wafer; and obtaining the solar battery by subsequent processes. The impurity coating adopted by the method is stable in property, simple in ingredients, succinct in technology of the technological process, and is likely to be compatible with existing production lines and production equipments.

Description

technical field [0001] The invention belongs to the technical field of photovoltaic cells, and in particular relates to a double-sided diffusion process of solar cells. Background technique [0002] The phosphorus diffusion (p-type silicon substrate) process of traditional crystalline silicon solar cells is generally single-sided diffusion. The surfaces that do not need to diffuse impurities are placed face to face on the carrier, and only the light-receiving surface of the solar cell is doped with phosphorus in the diffusion furnace. To form the emitter, while the back surface of the battery is heavily doped and passivated, double-sided batteries, N-type batteries, etc. all require different diffusion of impurity elements on both sides. The advantage of double-sided diffusion is that it can getter the non-light receiving surface, Furthermore, the voltage output of the battery can be increased, and both sides can receive incident light, so that the overall output power of th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/223
CPCH01L21/228H01L31/1804Y02E10/547Y02P70/50
Inventor 麻增智杨伟强严金梅李吉赵朋松
Owner JA SOLAR
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