Method of preparing diamond-like membrane by film sputtering in SiNx middle layer

A technology of diamond-like film and magnetron sputtering, which is applied in the direction of sputtering coating, coating, metal material coating process, etc., can solve the problem of high energy consumption not suitable for industrial production, large residual stress of diamond-like film, and limited film layer Problems such as deposition thickness, to achieve low internal stress, uniform and dense film, and reduce internal stress

Inactive Publication Date: 2014-06-11
SOUTHWEAT UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The main disadvantage of the diamond-like film is that the large residual stress generated during the preparation process makes it difficult to coordinate with the deformation of the substrate, and this force will also act on the substrate to deform the substrate, and the commonly used plasma-enhanced chemical vapor deposition method Hydrogen is inevitably introduced into the film during the deposition process, reducing the hardness of the film
As a protective layer, the introduction of hydrogen should be avoided as far as possible to reduce the hardness of the film, so the hydrogen-free diamond-like carbon film has gradually become a research hotspot, using vacuum cathode arc method, pulsed laser method, mass separation ion beam method and sputtering deposition method can obtain hydrogen-free films, but the stress of the first three methods is as high as 10Gpa, which seriously limits the deposition thickness of the film.
In addition, the traditional chemical vapor deposition (CVD) process is mostly deposited at high temperature, and the prepared diamond-like film has a large residual stress after cooling down, which seriously affects the quality of the film, and the high energy consumption is not suitable for industrial production.

Method used

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  • Method of preparing diamond-like membrane by film sputtering in SiNx middle layer
  • Method of preparing diamond-like membrane by film sputtering in SiNx middle layer
  • Method of preparing diamond-like membrane by film sputtering in SiNx middle layer

Examples

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Effect test

Embodiment 1

[0020] Example 1SiN X Preparation of diamond-like carbon film by interlayer magnetron sputtering

[0021] (1) Cleaning of Si (100)

[0022] Using the Si(100) substrate as the substrate, the Si(100) was first cleaned with acetone in an ultrasonic cleaner for 20 minutes at room temperature and pressure, and then cleaned with alcohol in an ultrasonic cleaner for 20 minutes. 2 Blow dry, bombard with Ar ions for 20 min before deposition, and put into sputtering chamber.

[0023] (2) Buffer layer SiN X growth

[0024] The process was completed in an ultra-high vacuum multifunctional magnetron sputtering system with a background vacuum of 4.0×10 -5 Pa, target material is Si (purity 99.999%), N 2 The flow rate of Ar gas and Ar gas are 3.2, 35.2 sccm respectively, where N 2 is the reactive gas, Ar is the working gas, and Ar is ionized to form Ar + , Ar + Colliding with the target under the action of an electromagnetic field, Ar + Exchange energy with the target atoms. When the...

Embodiment 2

[0028] (1) Cleaning of Si (100)

[0029] Using the Si(100) substrate as the substrate, the Si(100) was first cleaned with acetone in an ultrasonic cleaner for 20 minutes at room temperature and pressure, and then cleaned with alcohol in an ultrasonic cleaner for 20 minutes. 2 Blow dry, bombard with Ar ions for 20 min before deposition, and put into sputtering chamber.

[0030] (2) Growth of diamond-like film

[0031] The process was completed in an ultra-high vacuum multifunctional magnetron sputtering system with a background vacuum of 4.0×10 -5 Pa, the target material adopts high-purity carbon target (99.999%), the gas flow rate of Ar gas is 35.2 sccm, where Ar is the working gas, and Ar is ionized to form Ar + , Ar + Colliding with the target under the action of an electromagnetic field, Ar + Exchange energy with the target atoms. When the energy obtained by the target atoms is greater than the work escape of the metal, they will leave the target surface and deposit on ...

Embodiment 3

[0033] (1) Cleaning of Si (100)

[0034] Using the Si(100) substrate as the substrate, the Si(100) was first cleaned with acetone in an ultrasonic cleaner for 20 minutes at room temperature and pressure, and then cleaned with alcohol in an ultrasonic cleaner for 20 minutes. 2 Blow dry, bombard with Ar ions for 20 min before deposition, and put into sputtering chamber.

[0035] (2) Growth of buffer layer CNx

[0036] The process was completed in an ultra-high vacuum multifunctional magnetron sputtering system with a background vacuum of 4.0×10 -5 Pa, the target uses high-purity carbon target (99.999%), N 2 The flow rate of Ar gas and Ar gas are 3.2, 35.2 sccm respectively, where N 2 is the reactive gas, Ar is the working gas, and Ar is ionized to form Ar + , Ar + Colliding with the target under the action of an electromagnetic field, Ar +Exchange energy with the target atoms. When the energy obtained by the target atoms is greater than the work escape of the metal, they w...

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Abstract

The invention discloses a method of preparing a diamond-like film by magnetron sputtering in a SiNx middle layer. The method comprises the following steps: after cleaning a substrate Si chip, firstly forming a buffer layer SiNx thin film on the surface of the chip; and then, by taking a high purity carbon target as a target and Ar as a working gas, forming the diamond-like film on the SiNx thin film. The preparation process disclosed by the invention is simple and good in repeatability. The film can be deposited at low temperatures. The method is energy-saving, and the stress residue of the film cooled is reduced to prevent the film from falling. The diamond-like film prepared by the method disclosed by the invention has the advantages of low internal stress, good film quality, uniformity and compactness and the like.

Description

technical field [0001] The invention relates to the technical field of preparation of diamond-like film materials, in particular to a SiN X A method for preparing a diamond-like film by interlayer magnetron sputtering. Background technique [0002] Diamond-Like Carbon (DLC for short) is an amorphous carbon film, the chemical bonds in the film are mainly SP 3 key and sp 2 key. Since the first report of diamond-like film prepared by ion beam deposition technology in 1971, because of its high hardness, small friction coefficient, wear resistance, high resistivity, good chemical stability, high infrared transmittance, dielectric Low constant, high electrical insulation strength, good biocompatibility, and low thermal expansion coefficient make it widely used in mechanical, chemical, optical, thermal, electrical and other fields. [0003] The main disadvantage of the diamond-like film is that the large residual stress generated during the preparation process makes it difficul...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 陈青云王茜王金枝罗瑜王烈林王星博邓云礼
Owner SOUTHWEAT UNIV OF SCI & TECH
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