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Method for in-situ growth of two-dimensional lamellar structured nano-zinc oxide on ceramic tube

A nano-zinc oxide, sheet-like structure technology, applied in the direction of zinc oxide/zinc hydroxide, nanotechnology, measuring devices, etc., to achieve the effect of short time consumption, uniform size, and improved gas sensing performance

Active Publication Date: 2014-06-25
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the prior art, there is no relevant introduction about "the method of growing nanosheets vertically on the ceramic tube"

Method used

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  • Method for in-situ growth of two-dimensional lamellar structured nano-zinc oxide on ceramic tube
  • Method for in-situ growth of two-dimensional lamellar structured nano-zinc oxide on ceramic tube
  • Method for in-situ growth of two-dimensional lamellar structured nano-zinc oxide on ceramic tube

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042]The pre-purchased alumina ceramic tubes were cleaned by ultrasonication with acetone for 20 min, and dried for later use. Add 4.4g of zinc acetate dihydrate to 25 ml of ethylene glycol methyl ether; during the dissolving process of zinc acetate dihydrate, add 1.2g of ethanolamine dropwise to the above solution; when zinc acetate dihydrate and ethanolamine are completely dissolved, Zinc oxide seed layer solution was obtained; stand for 12 hours for later use. Take zinc nitrate and hexamethylenetetramine at a molar ratio of 1:1, add water to prepare a growth solution of 0.025 mol / l, place it in a polytetrafluoroethylene-lined autoclave with a volume of 50 ml, and set aside . Immerse the cleaned alumina ceramic tube in the zinc oxide seed layer solution for 4-12 hours, then take it out, anneal and calcinate at 350°C for 30 min; at this time, a layer of zinc oxide seed layer is formed on the surface of the alumina ceramic tube. The alumina ceramic tube with the zinc oxide ...

Embodiment 2

[0044] Clean the pre-purchased alumina ceramic tube with acetone for 20 min, and bake

[0045] Dry and set aside. Weigh 2.7 g of zinc acetate and add it to 125 mL of ethanol, and heat it under reflux in a constant temperature water bath at 95 °C. After the zinc acetate is completely dissolved, continue heating for 1 h, and then cool it down to room temperature. Then add 0.74 g of lithium hydroxide and ultrasonically oscillate for 1 h; a uniform zinc oxide seed layer solution is obtained. Take zinc nitrate and hexamethylenetetramine at a molar ratio of 1:1, add water to prepare a growth solution of 0.025 mol / l, place it in a polytetrafluoroethylene-lined autoclave with a volume of 50 ml, and set aside . Immerse the cleaned alumina ceramic tube in the zinc oxide seed layer solution for 4-12 h, then take it out, anneal and calcinate at 350°C for 30 min; at this time, a layer of zinc oxide seed layer is formed on the surface of the alumina ceramic tube. The alumina ceramic tube...

Embodiment 3

[0047] The pre-purchased alumina ceramic tubes were cleaned by ultrasonication with acetone for 20 min, and dried for later use. Add 4.4g of zinc acetate dihydrate to 25 ml of ethylene glycol methyl ether; during the dissolving process of zinc acetate dihydrate, add 1.2g of ethanolamine dropwise to the above solution; when zinc acetate dihydrate and ethanolamine are completely dissolved, Zinc oxide seed layer solution was obtained; stand for 12 hours for later use. Take zinc nitrate and hexamethylenetetramine at a molar ratio of 1:1, add water to prepare a growth solution of 0.025 mol / l, place it in a polytetrafluoroethylene-lined autoclave with a volume of 50 ml, and set aside . Immerse the cleaned alumina ceramic tube in the zinc oxide seed layer solution for 4-12 h, then take it out, anneal and calcinate at 350°C for 30 min; at this time, a layer of zinc oxide seed layer is formed on the surface of the alumina ceramic tube. The alumina ceramic tube with the zinc oxide see...

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Abstract

The invention relates to a method for in-situ growth of two-dimensional lamellar structured nano-zinc oxide on a ceramic tube, and belongs to the technical field of preparation of nano sensors. The method comprises the following steps: preparing a zinc oxide seed crystal layer on an aluminum oxide ceramic tube taken as a substrate by utilizing an impregnation method; and growing a mixed solution of zinc nitrate and hexamethylene tetramine on the aluminum oxide ceramic tube containing the zinc oxide seed crystal layer by utilizing a hydrothermal method so as to obtain zinc oxide nanosheets. According to the method, the two-dimensional lamellar structured nano-zinc oxide is grown in an aqueous solution at a high temperature and under a high pressure; and convection flows of the solution are generated by controlling the temperature difference of the solution in a high-pressure autoclave so as to form a hypersaturated state, thereby growing a lamellar crystal. The two-dimensional lamellar structured nano-zinc oxide grown on the aluminum oxide ceramic tube is controllable in shape, wherein the nanosheets are of a wurzite hexagonal structure and are uniform in size, namely, each of nanosheets is about 1 to 2 microns in size; and the nanosheets are mutually connected to form a network. In addition, the response of the nano-zinc oxide to the ethyl alcohol can reach 40; and the nano-zinc oxide has the good selectivity to the ethyl alcohol.

Description

technical field [0001] The invention relates to a method for in-situ growth of two-dimensional sheet structure nano-zinc oxide on a ceramic tube, belonging to the technical field of nano-sensor preparation. Background technique [0002] With the progress and development of science and technology and industry, toxic and harmful gases such as industrial waste gas and automobile exhaust have caused serious harm to the atmospheric environment and the health of residents. The role in production and life is getting bigger and bigger. The wide application of gas sensor in environmental monitoring, automatic control, etc. makes it an information component widely required in industrial and agricultural production and national defense construction. [0003] ZnO is an n-type semiconductor gas-sensing material, which has attracted much attention in gas-sensing sensors. ZnO, as an important Ⅱ-Ⅵ group direct bandgap wide-bandgap semiconductor material, can grow a variety of nanostru...

Claims

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Application Information

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IPC IPC(8): C01G9/02G01N27/00B82Y40/00
Inventor 徐红燕居佃兴曹丙强
Owner UNIV OF JINAN
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