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Binary doped graphene and preparation method thereof

A binary doping and graphene technology, applied in the field of carbon materials, can solve the problems of small energy gap and prevent large switching signal ratio, etc., and achieve the effect of short production cycle, simple process and large specific surface area

Active Publication Date: 2014-11-19
SHENZHEN WEITE XINDA TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the energy gap in the electronic energy spectrum of graphene materials is too small to be fully controlled like conventional semiconductors, which may prevent large switching signal ratios, etc.

Method used

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  • Binary doped graphene and preparation method thereof
  • Binary doped graphene and preparation method thereof
  • Binary doped graphene and preparation method thereof

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preparation example Construction

[0022] The preparation method of binary doped graphene provided by the invention comprises:

[0023] Heating the mixture of dopant source and organic salt or organic acid and salt to 300-1600°C in a non-oxidizing atmosphere to obtain a mixture of binary doped graphene and metal oxide;

[0024] Removing metal oxides in the mixture to obtain binary doped graphene;

[0025] Wherein, the doping source is a boron nitrogen source, a nitrogen phosphorus source, a nitrogen sulfur source or a sulfur phosphorus source, and the boron nitrogen source is selected from one or more of pyridine boric acid and imidazole boric acid, and the nitrogen phosphorus source One or two or more selected from N-(phosphinecarboxymethyl) iminodialkyl acids, and the nitrogen and sulfur source is selected from one of mercaptoazole compounds, mercaptopyrimidine compounds and mercaptopurine compounds or two or more, the sulfur phosphorus source is selected from one or more of phosphorothioate and phosphonothi...

Embodiment 1

[0043] Embodiment 1, weigh 5 grams of dodecyl manganese and 0.05 grams of 2-pyridine boric acid, put it into a magnetic boat, then use a tube furnace to heat up to 600 ° C at a rate of 2 ° C / min in nitrogen, and then Heated at 600°C for 2 hours to obtain a mixture of boron and nitrogen co-doped graphene and manganese oxide, washed with 10 ml of 37% concentrated hydrochloric acid at 50°C for 4 hours, and filtered to dryness to obtain boron-nitrogen co-doped graphene . According to elemental analysis, the boron content of the boron-nitrogen co-doped graphene is 0.4wt%, and the nitrogen content is 0.7wt%.

Embodiment 2

[0044] Embodiment 2, take by weighing 1.5 grams of magnesium citrate, 1.5 grams of magnesium n-octanoate and 0.3 grams of 2-pyridine boric acid, put it into a magnetic boat, then use a tube furnace to heat up to 600°C, heated at 600°C for 2 hours to obtain a mixture of boron and nitrogen co-doped graphene and magnesium oxide, washed with 10 ml of 30% acetic acid at 50°C for 4 hours, and filtered to dryness to obtain boron-nitrogen co-doped miscellaneous graphene. According to elemental analysis, the boron content of the boron-nitrogen co-doped graphene is 2.4%, and the nitrogen content is 4.1%.

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Abstract

The invention relates to binary doped graphene and a preparation method thereof. The preparation method comprises the following steps: heating the mixture of doping sources and organic salt under a non-oxide atmosphere to 300-1,600 DEG C to obtain the mixture of binary doped graphene and metallic oxide; removing the metallic oxide in the mixture to obtain binary doped graphene. According to the invention, the mixture of the doping sources and the organic salt is heated under the non-oxide atmosphere, and based on the concepts that the organic salt is carbonized to obtain graphene, nucleus formation of inorganic oxide is performed and active doping particles are generated during the pyrolysis of the doping sources, binary doped graphene is obtained. The preparation method has the advantages of simple technology, short production cycle, high possibility in home position doping, and the like; moreover, the prepared binary doped graphene has the characteristics of good porosity, larger specific surface area and no agglomeration and can be widely applied to fields of lithium ion batteries, supercapacitors, lead-acid cells, water treatment, electrocatalysis, photocatalysis and the like.

Description

technical field [0001] The invention relates to the technical field of carbon materials, in particular to a binary doped graphene and a preparation method thereof. Background technique [0002] Since Geim et al. successfully prepared single-layer graphite in 2004, the research on graphene is a current research hotspot because of its unique two-dimensional (2D) honeycomb carbon structure and excellent physical, chemical and mechanical properties. However, the energy gap in the electron spectrum of graphene materials is too small to be fully controlled like conventional semiconductors, which may prevent large switching signal ratios, etc. Heteroatoms introduced into the sp of graphene 2 The hybrid structure has been proved to be one of the methods to effectively open the bandgap of graphene and improve its chemical reactivity, which is of great significance for its application. Contents of the invention [0003] The technical problem to be solved by the present invention i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 马建民毛玉华
Owner SHENZHEN WEITE XINDA TECH CO LTD
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