A terahertz photoconductive antenna and its manufacturing method

Abstract

The invention relates to a terahertz photoconductive antenna and its manufacture, in particular to a semi-insulating gallium arsenide (SI-GaAs) material, which uses ultra-short pulse laser technology to obtain artificial periodic microstructure stripes on its surface, and combines with semiconductor microstructures. The invention relates to the design and manufacture of a terahertz photoconductive antenna of a processing technology, and relates to the technical field of terahertz optoelectronic devices. The invention effectively changes the surface morphology of the semiconductor through the femtosecond pulse laser ablation process, improves the optical absorption and electrical properties, and thus improves the photoelectric conversion efficiency. Combined with the semiconductor micro-processing technology, the micro-structure processing area is precisely controlled, the power consumption of the antenna is reduced, and the efficiency of terahertz emission is improved. The Au / Ti electrode is simple in composition, and good ohmic contact can be obtained without annealing, and the optoelectronic properties of the material are significantly improved after processing. , improve the reliability of the device and other characteristics, with low equipment cost, simple preparation process, convenient operation, and provide a solid technical and material basis to meet market demand.

Description

technical field [0001] The invention relates to the technical field of terahertz optoelectronic devices, and specifically refers to a material based on semi-insulating gallium arsenide (SI-GaAs), using ultrashort pulse laser technology to obtain artificial periodic microstructure stripes on its surface, combined with semiconductor micromachining technology Design and fabrication of terahertz photoconductive antenna. Background technique [0002] Terahertz time-domain spectroscopy technology has great application prospects in basic research fields such as semiconductor nanostructure carrier dynamics, protein folding dynamics, and electrolyte high-frequency response, as well as in biomolecular detection, medical imaging, and microelectronic detection. It is of great significance for the development of materials science, molecular biology, medical diagnosis, industrial imaging and other disciplines in our country to become an important technical means in the above research. Th...

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Problems solved by technology

However, due to the limitation of the optical band gap and electrical characteristics of SI-GaAs, its terahertz emission efficiency has been difficult to be greatly improved. Although the radiation intensity can be increased by increasing the electrode spacing, combined with strong laser excitation and high voltage bias, However, the energy consumption is huge and the cost of use is extremely high, which is not conducive to the miniaturization and practical application of terahertz time-domain spectroscopy technology.

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