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Terminal passivation structure for SiC power device and preparation method thereof

A technology of power devices and terminals, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve the problems of difficult preparation of passivation structures, high temperature resistance, and complicated terminal passivation structures, etc. Good breakdown electricity, high temperature stability, and flexible formation methods

Inactive Publication Date: 2015-03-11
ZHUZHOU CSR TIMES ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0012] In view of the disadvantages of the prior art that the terminal passivation structure is complex, the passivation structure is difficult to prepare, or cannot withstand high temperatures, the present invention aims to provide a terminal passivation structure for SiC power devices, and provides a method for preparing the passivation structure Method, the structure adopts DLC thin film layer to replace the existing non-stoichiometric silicon nitride layer and stoichiometric silicon nitride layer, improve the reverse breakdown voltage of the device, reduce the reverse leakage current, and at the working temperature of the SiC device, Stable and reliable to withstand more temperature cycles, improve device reliability, and effectively solve the problem of terminal passivation protection when SiC devices work at high temperatures, simple structure, easy to implement

Method used

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  • Terminal passivation structure for SiC power device and preparation method thereof
  • Terminal passivation structure for SiC power device and preparation method thereof
  • Terminal passivation structure for SiC power device and preparation method thereof

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Embodiment 1

[0040] Such as figure 1 As shown, a terminal passivation structure for SiC power devices includes a SiC substrate layer 2, an ohmic contact layer 1 disposed on one side of the SiC substrate layer 2, and a SiC epitaxial layer 3 disposed on the other side of the SiC substrate layer 2 , the Schottky contact layer 5 located in the middle above the SiC epitaxial layer 3, the silicon oxide layer 6 located on the SiC epitaxial layer 3 and at the periphery of the Schottky contact layer 5; on the silicon oxide layer 6 and the The DLC film layer 8 is provided on the Schottky contact layer 5 , and the DLC film layer 8 on the Schottky contact layer 5 is provided with an opening 7 for exposing the Schottky contact layer 5 . The thickness of the DLC film layer 8 is 150nm-200nm.

Embodiment 2

[0041] Embodiment 2 preparation method

[0042] A cross-sectional schematic diagram of a SiC device using this scheme is shown in figure 2 with 3 Shown (taking the diode device as an example). Form an epitaxial layer on the SiC substrate by epitaxial growth; then form a P-type region by ion implantation; form a silicon oxide layer by in-situ sacrificial oxidation and deposition, and then remove it by photolithography and etching Partial oxidation layer; form ohmic contact on the substrate side; form Schottky contact on the epitaxial layer side; form large-area DLC film on the outside of the Schottky contact; expose the anode metal electrode by etching.

[0043] Taking SiC Schottky diode as an example to illustrate the process of realizing the present invention, such as Figure 4 Shown:

[0044] ① Complete the Schottky contact of the device. The Schottky contact can use multiple metals (such as metal Ti) and a combination of multiple metals, with a thickness of It can b...

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Abstract

The invention belongs to the field of SiC power devices, and particularly relates to a terminal passivation structure for a SiC power device and a preparation method thereof. The terminal passivation structure adopts a DLC film layer to replace existing polyimide-type materials and a composite structure of a non-stoichiometric silicon nitride layer and a stoichiometric silicon nitride layer. The passivation method adopts a DLC film material to carry out terminal passivation protection on the SiC power device. The passivation structure improves reverse breakthrough voltage of the device and reduces reverse leakage current at an operating temperature of the SiC device, and bears a higher operating temperature stably and reliably, thereby improving the reliability of the device, and effectively solving a problem of terminal passivation protection when the SiC device operates at a high temperature. In addition, the structure is simple, and the implementation difficulty of the process is low.

Description

technical field [0001] The invention belongs to the field of SiC power devices, and in particular relates to a terminal passivation structure for SiC power devices and a preparation method thereof. Background technique [0002] In recent years, with the continuous advancement of microelectronics technology, Si-based power electronic devices have developed rapidly, and their performance has been improved by leaps and bounds. However, the application of harsh environments such as high temperature and high humidity has always been a bottleneck that Si-based devices cannot break through. As a wide bandgap semiconductor material, SiC has excellent physical properties such as large bandgap width, high breakdown electric field, high saturation electron drift rate, and high thermal conductivity. SiC power electronic devices can reduce on-state loss and switching loss, While improving system efficiency, it also makes the device more reliable in harsh environments such as high temper...

Claims

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Application Information

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IPC IPC(8): H01L23/29H01L21/04H01L29/861H01L21/329
Inventor 史晶晶
Owner ZHUZHOU CSR TIMES ELECTRIC CO LTD
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