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High-density zinc oxide based target and preparation method thereof

A zinc oxide-based, high-density technology, which is applied in the field of semiconductor materials, can solve the problems of difficulty in obtaining high-quality and high-density zinc oxide-based targets, difficulty in achieving large size, and increased carbon content in the target, so as to achieve fine grain size and shape Short time, high density effect

Active Publication Date: 2015-03-18
ADVANCED TECHNOLOGY & MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although the process is simple, there are the following disadvantages: graphite will penetrate into the target material and reduce the zinc oxide-based powder, causing a sharp increase in the carbon content of the target material, carburization is extremely difficult to remove, and a large number of holes are easily formed inside the target material after decarburization At the same time, it is difficult to achieve large-scale zinc oxide-based targets prepared by hot-pressing process; the relative density inside the hot-pressed zinc oxide-based targets is not uniform, and the difference between the density of the middle and the edge is more than 5%, and it is difficult to obtain high-quality and high-density zinc oxide-based targets. target

Method used

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  • High-density zinc oxide based target and preparation method thereof
  • High-density zinc oxide based target and preparation method thereof
  • High-density zinc oxide based target and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] Embodiment 1 Preparation of pure zinc oxide target material

[0037] Mixing: Weigh 15Kg of zinc oxide powder with a purity of 99.99% and a particle size of 50nm, add 1500g of WR-14 polyvinyl alcohol binder (produced by Nippon Synthetic Chemical Industry Co., Ltd.), and add 20Kg of deionized water to it, and use magnetic Stirring means are mixed with each other evenly; the mixed slurry is dried and pulverized by a spray pulverizing process, so as to obtain a dry mixed powder with uniform particle size distribution, and its average particle size is 15 μm;

[0038] Binder removal and degassing: The dry mixed powder is put into a stainless steel sheath for a flat target, and placed in a degassing furnace for vacuum degassing. The degassing temperature is 400°C, the holding time is 20h, and the vacuum degree is 10 -2 Pa;

[0039] Hot isostatic pressing: Put the degassed package into a hot isostatic pressing furnace for hot isostatic pressing. The hot isostatic pressing temp...

Embodiment 2

[0043] Example 2 Preparation of indium gallium doped zinc oxide target

[0044] Mixing: Weigh 40Kg of zinc acetate powder with a purity of 99.99% and 8kg of analytically pure urea, and weigh 200g each of indium oxide and gallium oxide powder with a purity of 99.99% and a particle size of 50nm, and add 2.42Kg WR-14 to the above raw materials Polyvinyl alcohol binder (produced by Nippon Synthetic Chemical Industry Co., Ltd.), and 85Kg deionized water was added, and the magnetic stirring means was used to mix each other evenly; the mixed slurry was dried and powdered by spraying powder making process, thereby obtaining Dry mixed powder with uniform particle size distribution, the particle size is 45μm;

[0045] Binder removal and degassing: the dry mixed powder is put into a stainless steel sheath for a flat target, and placed in a degassing furnace for vacuum degassing. The degassing temperature is 650°C, the holding time is 30h, and the vacuum degree is 10 -2 Pa;

[0046] Hot...

Embodiment 3

[0050] Example 3 Preparation of boron-doped zinc oxide target

[0051] Mixing: Weigh 48Kg of zinc nitrate with a purity of 99.99% and 9.7kg of analytically pure thiourea, and weigh 120g of boron powder with a purity of 99.9% and a particle size of 1 μm, and add 2.89Kg of WR-14 polyvinyl alcohol viscose to the above raw materials Binder (produced by Nippon Synthetic Chemical Industry Co., Ltd.), and 86.7Kg of deionized water was added, and mixed with each other evenly by means of wet ball milling; the mixed slurry was dried and powdered by spray milling process, so as to obtain the particle size distribution Uniform dry mixed powder with a particle size of 5 μm;

[0052] Binder removal and degassing: the dry mixed powder is put into a stainless steel sheath for a flat target, and placed in a degassing furnace for vacuum degassing. The degassing temperature is 700 ° C, the holding time is 10 hours, and the vacuum degree is 10 -3 Pa;

[0053] Hot isostatic pressing: Put the deg...

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Abstract

The invention discloses a high-density zinc oxide based target and a preparation method thereof. The method sequentially comprises the following steps: mixing materials: adding a binder and water into raw materials, mixing uniformly, so as to obtain uniform slurry, and carrying out drying and powdering on the slurry, so as to obtain dry powder particles with uniform particle size distribution; carrying out binder removal and degassing: loading the dry powder particles into a package of a corresponding size, and carrying out binder removal and degassing treatment; carrying out hot isostatic pressing: soldering and sealing the package which is subjected to binder removal and degassing, and then, carrying out hot isostatic pressing treatment; annealing: carrying out annealing treatment on package removed ingot blank. The zinc oxide based target obtained by adopting the method has the advantages that the relative density is not lower than 99% of theoretical density, the density is uniform, the average crystal grain size is not greater than 30 microns, and the zinc oxide based target is free from air pores and loosening.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a high-density zinc oxide-based ceramic target material for preparing a wide-bandgap transparent zinc oxide-based thin film and a preparation method thereof. Background technique [0002] With the rapid development of semiconductors, computers, solar energy and other fields, transparent conductive oxide (TCO) films can be widely used in transparent electrodes, liquid crystal displays (LCDs), and plasma displays (PDPs) due to their good conductivity and high transmittance. ), organic light-emitting diodes (OLED) and other high-definition flat-panel displays, solar cells and various optoelectronic devices. In addition, TCO can also be applied to gas sensors, infrared radiation reflectors, low-emissivity coated glass, antistatic coating, anti-icing and defrosting functional glass, etc. At present, the most widely used transparent conductive film in indus...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F3/14
Inventor 张凤戈高明唐培新张路长郝权缪磊王江廷姜海姚伟
Owner ADVANCED TECHNOLOGY & MATERIALS CO LTD
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