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Zinc oxide nanowire array structure and preparation method thereof

A zinc oxide nanowire and array structure technology, applied in the direction of zinc oxide/zinc hydroxide, nanotechnology, nanotechnology, etc., can solve problems such as unfavorable photoelectric performance, lattice mismatch, structural defects, etc., to avoid structural defects, The effect of reducing production cost and improving photoelectric performance

Active Publication Date: 2015-03-18
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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Problems solved by technology

[0006] At present, sapphire, gallium nitride, aluminum nitride or aluminum gallium nitride are generally used as substrates in the preparation of zinc oxide nanowire arrays by chemical vapor deposition. These substrates are very expensive, and the zinc oxide nanowires and substrates The interface of ZnO will cause structural defects due to lattice mismatch, which will adversely affect the photoelectric performance; in addition, ZnO nanowire arrays grown on substrates such as sapphire and gallium nitride cannot be separated from the substrate material, sometimes It will cause certain problems for the integration of devices based on ZnO nanowire arrays with other optoelectronic devices

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  • Zinc oxide nanowire array structure and preparation method thereof
  • Zinc oxide nanowire array structure and preparation method thereof
  • Zinc oxide nanowire array structure and preparation method thereof

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preparation example Construction

[0028] The invention provides a method for preparing a zinc oxide nanowire array structure, the method comprising the following steps:

[0029] (1) Put the mixture of zinc oxide, graphite powder and the first dopant into the quartz tube in the tube furnace after grinding, and pass the mixed gas of inert gas and oxygen into the quartz tube to carry out the first Secondary chemical vapor deposition, doped zinc oxide microribbons grown in quartz tubes;

[0030] (2) transferring the doped zinc oxide microribbon in the quartz tube to a silicon wafer, and placing the mixture of zinc powder and the second dopant upstream of the doped zinc oxide microribbon after grinding, and then Put them together into the quartz tube of the tube furnace, and pass the mixed gas of inert gas and oxygen into the quartz tube to carry out the second chemical vapor deposition.

[0031] According to the present invention, the schematic diagram of the chemical vapor deposition apparatus used in the presen...

Embodiment 1

[0045] This embodiment is used to illustrate the zinc oxide nanowire array structure prepared by the method of the present invention

[0046] (1) Preparation of zinc oxide microribbons

[0047] Zinc oxide, graphite powder and lithium chloride are mixed and ground according to the mass ratio of 3:1.5:0.4, and the particle size of the mixture of zinc oxide, graphite powder and lithium chloride after grinding is 1-100 microns, and then the The mixture is placed in a quartz tube, and the quartz tube is placed in the center of the tube furnace; then a mixed gas of argon and oxygen is introduced to carry out the first chemical vapor deposition, wherein the flow rates of argon and oxygen are respectively 100sccm and 0.5sccm; start to heat up from room temperature at a rate of 30 degrees Celsius / minute, rise to the reaction temperature of 900 degrees Celsius, and then keep warm at this temperature for 4 hours, then close the heat preservation program, and the furnace will naturally co...

Embodiment 2

[0052] This embodiment is used to illustrate the zinc oxide nanowire array structure prepared by the method of the present invention

[0053] (1) Preparation of zinc oxide microribbons

[0054] Mix and grind zinc oxide, graphite powder and lithium chloride according to the mass ratio of 2:1:0.3, and the particle size of the mixture of zinc oxide, graphite powder and lithium chloride after grinding is 1-100 microns; then the mixture Put it in a quartz tube, and then place the quartz tube in the center of the tube furnace; then pass a mixed gas of argon and oxygen to carry out the first chemical vapor deposition, wherein the flow rates of argon and oxygen are 150sccm and 1 sccm; start to heat up from room temperature, the heating rate is 35 degrees Celsius / minute, rise to the reaction temperature, that is, 1000 degrees Celsius, and then keep warm at this temperature for 3.5 hours, then close the heat preservation program, and the furnace naturally cools down to room temperature,...

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Abstract

The invention discloses a preparation method of a zinc oxide nanowire array structure. The preparation method comprises the following steps: (1) grinding the mixture of zinc oxide, graphite powder and a first dopant, putting the mixture in a quartz tube in a tube furnace, importing the mixed gas of inert gas and oxygen into the quartz tube and carrying out the first chemical vapor deposition so as to generate a doped zinc oxide micro-ribbon in the quartz tube; and (2) transferring the doped zinc oxide micro-ribbon in the quartz tube onto a silicon wafer, grinding the mixture of zinc powder and a second dopant, putting the mixture at the upstream of the doped zinc oxide micro-ribbon, together putting into the quartz tube of the tube furnace, and importing the mixed gas of inert gas and oxygen into the quartz tube and carrying out the second chemical vapor deposition. According to the preparation method, the obtained zinc oxide nanowire array structure is low in cost, excellent in structure and relatively large in size, and has a certain advantage in the photoelectric device preparation and integration processes.

Description

technical field [0001] The invention belongs to the field of preparation of micro-nano materials, in particular, the invention relates to a zinc oxide nanowire array structure and a preparation method thereof. Background technique [0002] Zinc oxide is an important Ⅱ-Ⅵ group direct bandgap wide bandgap semiconductor, its bandgap width reaches 3.37 electron volts (eV), and the exciton binding energy is as high as 60 millielectron volts (meV). In addition, zinc oxide also has a significant piezoelectric effect and good biocompatibility. Zinc oxide can form nanostructures with very rich morphology. These nanomaterials also exhibit unique properties that bulk zinc oxide materials do not have, such as quantum confinement effect, quantum tunneling effect, etc., which have attracted widespread attention. Photodetectors, lasers, nanogenerators, thermoelectric conversion, biomedicine, transparent conductive films and other fields have very broad application prospects. [0003] ZnO...

Claims

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Application Information

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IPC IPC(8): C01G9/02B82Y30/00B82Y40/00
CPCC01G9/03C01P2002/72C01P2004/03C01P2004/16Y02P20/10
Inventor 贺蒙张俊涛李建业
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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