Resonant tunneling diode with double ingan quantum wells and method of making the same

Abstract

The invention discloses a resonance tunneling diode with double InGaN sub quantum wells. The resonance tunneling diode mainly solves the problems that an existing device is small in tunneling current and poor in I-V character repeatability. The resonance tunneling diode comprises a main body and an auxiliary body, the main body is divided into a SiC substrate layer, a GaN epitaxial layer, an n+GaN collector ohmic contact layer, a first GaN isolating layer, a first InAlN barrier layer, a first GaN main quantum well layer, a second GaN main quantum layer, a second InAlN barrier layer, a second GaN isolating layer and an n+GaN emitter diode ohmic contact layer from bottom to top, and the auxiliary part is provided with an annular electrode, a round electrode and a passivation layer. The annular electrode is arranged above the n-GaN collector ohmic contact layer, the round electrode is arranged above the n+GaN emitter ohmic contact layer, and the passivation layer is arranged above the annular electrode and the round electrode. The resonance tunneling diode can effectively improve the power of the device, reduce power consumption and improve the repeatability and is suitable for the terahertz radiation frequency band work.

Description

technical field

[0001] The invention belongs to the technical field of microelectronic devices, and relates to a resonant tunneling diode of a wide bandgap semiconductor GaN material and a manufacturing method, which can be used for manufacturing high-frequency and high-power devices. Background technique

[0002] In recent years, the third-generation wide-bandgap semiconductor materials represented by gallium nitride GaN and silicon carbide SiC follow the first-generation semiconductor materials represented by semiconductor Si and the second-generation semiconductor materials represented by GaAs. A new type of semiconductor material that has developed rapidly in the past ten years. GaN-based semiconductor materials and devices are subject to great influence due to their excellent characteristics such as large bandgap width, high conduction band discontinuity, high thermal conductivity, high critical field strength, high carrier saturation rate, and high two-dimensional elec...

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