Material for filter chamber and filter chamber

A filter and cavity technology, used in waveguide-type devices, electrical components, circuits, etc., can solve problems such as unfavorable heat dissipation and low thermal conductivity, and achieve the effect of solving inconsistent thermal expansion coefficients, high thermal conductivity, and high thermal conductivity.

Inactive Publication Date: 2015-04-01
YUNNAN YUNTIANHUA
View PDF5 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] c. The thermal conductivity of the cavity of the dielectric ceramic material is low, which is not conducive to heat dissipation
[0008] It can be seen that the newly designed solution only solves the problem of thermal expansion coefficient, which brings about another negative impact

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Material for filter chamber and filter chamber

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The material used for the filter cavity in this embodiment is a composite material formed by adding metal aluminum to silicon carbide—aluminum silicon carbide, the amount of metal aluminum added accounts for 37% of the total volume of aluminum silicon carbide by volume, and the formation method is The SiC green body is formed by cold isostatic pressing process, formed after aluminizing at high temperature, and the filter cavity is formed by wire cutting, which can also be formed by laser cutting;

[0037] As shown in the figure, the inner surface of the filter cavity of this embodiment is plated with a 4 μm copper conductive layer, and the surface of the copper conductive layer is electroplated or deposited to form a 4 μm silver conductive layer; of course, gold can be used instead of silver, and the thickness can be reduced , generally choosing a thickness not less than 2 μm can also achieve the purpose of the invention.

[0038]In this embodiment, the bottom of the fi...

Embodiment 2

[0042] The material used for the filter cavity in this embodiment is a composite material formed by adding metal aluminum to silicon carbide—aluminum silicon carbide, the amount of metal aluminum added accounts for 45% of the total volume of aluminum silicon carbide by volume, and the formation method is It is formed by metallurgy of SiC and metal aluminum powder and fired at high temperature, and the filter cavity is formed by wire cutting, and can also be formed by laser cutting;

[0043] As shown in the figure, the inner surface of the filter cavity of this embodiment is plated with a 6 μm copper conductive layer, and a 4 μm silver conductive layer is formed on the surface of the copper conductive layer by electroplating or deposition; of course, gold can be used instead of silver, and the thickness can be reduced , generally choosing a thickness not less than 2 μm can also achieve the purpose of the invention.

[0044] In this embodiment, the bottom of the filter cavity is...

Embodiment 3

[0047] The material used for the filter cavity in this embodiment is a composite material formed by adding metal aluminum to silicon carbide—aluminum silicon carbide, the amount of metal aluminum added accounts for 63% of the total volume of aluminum silicon carbide by volume, and the formation method is The SiC green body is formed by gel-injection molding net size forming process, formed after aluminizing at high temperature, and the filter cavity is formed by wire cutting processing, which can also be formed by laser cutting;

[0048] As shown in the figure, the inner surface of the filter cavity of this embodiment is plated with a 12 μm copper conductive layer, and the surface of the copper conductive layer is electroplated or deposited to form a 2 μm gold conductive layer; of course, silver can be used instead of gold, and the thickness can be increased appropriately , generally choosing a thickness not less than 4 μm can also achieve the purpose of the invention.

[0049...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
flexural strengthaaaaaaaaaa
Login to view more

Abstract

The invention discloses a material for a filter chamber. The material for the filter chamber is a compound material formed by adding metal into silicon carbide; through the adding amount of the metal, the thermal conductivity of the compound material is higher than 170 W / m.K, and the thermal expansion coefficient is 6.5-11 ppm / DEG C. The compound material disclosed by the invention not only is suitable for manufacturing the chamber in aspect of performance, but also has the thermal expansion coefficient same as or similar to a dielectric resonator ceramic material; a dielectric resonator and the chamber are not required to adopt an existing integrated molding structure, so that the difficulties of processing and manufacturing are reduced; meanwhile, the material has relatively-higher thermal conductivity and can meet the thermal conduction needs, and the problem of unstable working frequency caused by temperature rise due to filter self loss is solved; the formed chamber has high bending strength and small brittleness, and fragmentation risk during the subsequent processing and the use process are reduced; the material is suitable for complicated chambers of a plurality of resonators, negative effect brought by tress concentration is eliminated, and subsequent assembly and use are ensured.

Description

technical field [0001] The invention belongs to the field of communication filters, in particular to the field of materials used for filter cavities. Background technique [0002] Filter (filter) is a device used to eliminate interference noise. It is widely used in the field of communication and is necessary; with the miniaturization of wireless base stations, the requirements for miniaturization of filters are getting higher and higher. Dielectric resonance filter Because of its compact size, good thermal stability and high Q performance, it is widely used in satellite communication equipment and terrestrial cellular base station equipment. [0003] In the above applications, the double-ended welded TM mode dielectric filter (referred to as TM mode dielectric filter) has the advantages of small size, low loss, and high temperature stability. This filter requires the dielectric resonator to be welded to the cover and the bottom of the cavity (where the cover is welded or s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01P1/207
Inventor 雒文博杨晓战郝建伟聂爽吴若楠刘明龙
Owner YUNNAN YUNTIANHUA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap