Spherical crystalline silicon carbide powder and method for manufacturing same

A technology of silicon carbide powder and manufacturing method, which is applied in the direction of silicon carbide, carbide, transportation and packaging, etc., can solve the problems of incomplete densification, high cost, unavailable spherical crystal silicon carbide powder, etc., and achieve high utilization value, Effect of high thermal conductivity, excellent dielectric properties and toughness

Inactive Publication Date: 2015-04-15
信浓电气制錬株式会社
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this production method has to use expensive polycarbosilane as a raw material, so the cost is high, and the obtained silicon carbide particles are amorphous particles whose crystal form does not show a crystal phase peak when analyzed by X-ray diffraction.
In addition, when silicon carbide is produced from silicon dioxide and carbon, the temperature is generally high above 1600°C, but in this production method, the sintering temperature is relatively low at a maximum of 1600°C. Therefore, although there is no However, it can be inferred from the sintering temperature that the interior of the obtained particles is porous particles with incomplete densification
[0011] In summary, although various methods for producing silicon carbide powder are known so far, spherical crystal silicon carbide powder with a particle size of 0.5 to 5 μm and a fine interior that the inventors aim at has not yet been obtained.

Method used

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  • Spherical crystalline silicon carbide powder and method for manufacturing same
  • Spherical crystalline silicon carbide powder and method for manufacturing same
  • Spherical crystalline silicon carbide powder and method for manufacturing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] In Example 1, powder obtained by mixing spherical phenolic resin with an average particle size of 1.5 μm and silica AEROSIL with an average particle size of 0.02 μm at a weight ratio of phenolic resin / silica of 1.30 was charged into the high-frequency An induction heating furnace was heated to 1000° C. in an argon atmosphere and kept at 1000° C. for 1 hour, thereby calcining the spherical resin. Then, it was heated to 2200° C. and kept at 2200° C. for 2 hours to obtain a synthesized SiC powder. The synthesized SiC powder was kept at 700°C for 3 hours in a resistance heating furnace to remove unreacted carbon, thus obtaining figure 1 Shown are spherical particles with an average particle size of about 1.0 μm. Depend on figure 2 From the X-ray diffraction pattern shown, it can be seen that the obtained spherical particles are β-crystal SiC. In addition, in this spherical SiC, the internal pore volume with an average pore diameter of 0.05 μm is 0.00002 cc / g, and the s...

Embodiment 2

[0057] In Example 2, the treatment was performed under the same conditions as in Example 1, except that the weight ratio of the phenolic resin / silica was 1.13, and the reaction temperature after firing was 1800°C. As a result, SiC spherical particles having an average particle diameter of about 1 μm were obtained. It can be seen from the X-ray diffraction pattern that the obtained spherical SiC particles are β-type crystal SiC, and its specific surface area is 2.7m 2 / g.

Embodiment 3

[0061] In Example 3, the powder obtained by mixing spherical furan resin with an average particle diameter of 2.5 μm and silica AEROSIL with an average particle diameter of 0.02 μm at a furan resin / silica weight ratio of 1.60 was charged into a high-frequency An induction heating furnace was heated to 1000° C. in an argon atmosphere and kept at 1000° C. for 1 hour, thereby calcining the spherical resin. Then, it was heated to 2000° C. and kept at 2000° C. for 2 hours to obtain a synthesized SiC powder. The synthesized SiC powder was kept at 700°C for 3 hours in a resistance heating furnace to remove unreacted carbon, thus obtaining Figure 4 Shown are spherical particles with an average particle size of about 1.7 μm. Depend on Figure 5 From the X-ray diffraction pattern shown, it can be seen that the obtained spherical particles are β-crystal silicon carbide. In addition, in this spherical SiC, the internal pore volume with an average pore diameter of 0.05 μm is 0.0003 cc / ...

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Abstract

A spherical crystalline silicon carbide powder as well as its manufacturing method are proposed; the new powder mean grain size is 0.5 - 5 micrometers, its specific volume of interior pores having a mean diameter of 0.003 through 0.1 micrometer is 0.000007 cm 3 / g through 0.01 cm 3 / g, and its specific surface area is 0.5 m 2 / g through 8.0 m 2 / g.

Description

technical field [0001] The invention relates to a spherical crystal silicon carbide powder with a small particle size and a fine interior and a manufacturing method thereof. Background technique [0002] In order to take advantage of the high hardness, high thermal conductivity, and high temperature heat resistance of silicon carbide powder, silicon carbide powder is often used as a material for grinding wheels, high thermal conductivity compounds with organic polymers, and molding parts for semiconductor manufacturing devices. In this case, after mixing and polymerizing silicon carbide powder, base materials such as polyvinyl alcohol, phenolic resin, epoxy resin, and various molding aids such as binders such as methyl cellulose, pressurization or heating Formed into viscous varnishes, films, and sintered structures. [0003] Generally speaking, the particle shape of this kind of powder is an irregular shape with sharp edges in the untreated crushed state after crushing. F...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36
CPCC04B2235/3418C04B2235/5409C04B2235/5445C04B35/6261C01B31/36C04B35/62675C04B35/573C01P2004/51C01P2004/61C01P2006/12C01P2006/14C01P2006/16C04B35/64C04B2235/786C04B2235/762C04B2235/3834C04B2235/5436C04B2235/48C04B2235/785C01P2004/62C01B32/956Y10T428/2982C01B32/97
Inventor 望月正裕清水孝明
Owner 信浓电气制錬株式会社
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