A high temperature pressure sensor and its processing method
A technology of pressure sensor and processing method, which is applied in the direction of fluid pressure measurement by changing ohmic resistance, can solve the problems of silicon-based sensors that are difficult to work for a long time, and achieve the effects of eliminating leakage current, increasing working temperature, and good thermal stability
Active Publication Date: 2018-05-25
PEKING UNIV
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[0003] The purpose of the present invention is to provide a high-temperature pressure sensor and its processing method to solve the problem that traditional silicon-based sensors are difficult to work in a high-temperature environment for a long time
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[0017] In order to make the above objects, features and advantages of the present invention more obvious and understandable, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0018] figure 1 (a)~ figure 1 (h) is a schematic diagram of the main processing technology of the high-temperature pressure sensor processed by the present invention;
[0019] figure 1 (a) shows the double-sided polished SOI single-crystal silicon wafer used for processing the high-temperature pressure sensor of the present invention, the device layer 1 is N (100) single-crystal silicon, and the thickness of the buried oxide layer 2 is The substrate layer 3 has a thickness of 400um.
[0020] Such as figure 1 As shown in (b), perform boron ion implantation and annealing, and etch the device layer of the substrate to form the bridge arm resistance 4 of the Wheatstone bridge. Since increasing the doping concentratio...
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The invention discloses a high-temperature pressure sensor and a processing method thereof. The pressure sensor comprises a silicon sensitive diaphragm, a base, and a TO tube shell. Among them, the sensitive diaphragm adopts SOI single crystal silicon wafer as the substrate, processes resistance and lead wire interconnection on the device layer to form a Wheatstone bridge, and performs anisotropic etching on the substrate layer to form the pressure-sensitive diaphragm structure; The base uses a glass sheet or a single crystal silicon wafer as a substrate, and performs anodic bonding or silicon-silicon direct bonding or silicon-silicon dielectric bonding with the sensitive diaphragm; the TO-type metal shell is used as the outer shell to realize chip-level packaging. The invention uses the buried oxide layer of the SOI wafer and the deposited silicon dioxide / silicon nitride passivation layer to wrap and isolate the silicon resistance, which eliminates the leakage current at high temperature; sputtering grows titanium disilicide / titanium / titanium nitride / platinum / gold multi-layer high temperature resistant ohmic contact electrode structure; high temperature resistant bonding and TO packaging technology are used to improve the high temperature working stability of the sensor. Solve the problem that traditional silicon-based sensors are difficult to work in a high temperature environment for a long time.
Description
technical field [0001] The invention relates to the field of microelectronic machining, in particular to a high-temperature pressure sensor and a processing method thereof. Background technique [0002] High-temperature resistant sensors manufactured based on microelectronic machining technology are widely used in high-temperature extreme environments such as aerospace and industrial production. One reason why traditional pressure sensors are difficult to work in high temperature environments is that traditional piezoresistive pressure sensors use monocrystalline silicon as a substrate, and P-type diffused resistors are made on N-type silicon substrates, relying on reverse-biased PN junction isolation , when the ambient temperature exceeds 120 ° C, the leakage current of the PN junction will increase, and the isolation will fail; another important factor restricting the maximum operating temperature of the pressure sensor is that the resistivity of the traditional electrode ...
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IPC IPC(8): G01L9/06
Inventor 刘冠东崔万鹏高成臣郝一龙
Owner PEKING UNIV