Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Graphene/cadmium telluride solar battery intensified by cadmium selenide and preparation method thereof

A technology of solar cells and cadmium selenide, which is applied in the field of solar cells, can solve the problems of narrow band gap of silicon materials and not being a basic material, and achieve the effects of low cost, simple preparation process, and improved photoelectric conversion efficiency

Active Publication Date: 2015-04-29
ZHEJIANG UNIV
View PDF7 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For solar cell applications, the silicon material has a narrow band gap and an indirect band gap, so it is not the ideal basic material

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Graphene/cadmium telluride solar battery intensified by cadmium selenide and preparation method thereof
  • Graphene/cadmium telluride solar battery intensified by cadmium selenide and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] 2) Deposit 40 nm thick indium-doped tin oxide on polyimide flexible substrate by magnetron sputtering;

[0025] 3) Deposit a cadmium telluride layer with a thickness of 6 microns on the indium-doped tin oxide layer by physical vapor deposition technology, and reserve an area for growing the first electrode on the ITO layer;

[0026] 4) Transfer single-layer graphene onto the cadmium telluride layer;

[0027] 5) Spin-coat the cadmium selenide quantum dot solution on the graphene, and reserve an area for growing the second electrode on the graphene; the diameter of the cadmium selenide quantum dot is 1nm-1μm;

[0028] 6) Coating silver paste on the reserved area of ​​the graphene and the reserved area on the ITO layer and drying; a graphene / cadmium telluride solar cell enhanced by cadmium selenide is obtained.

[0029] The energy band structure diagram of the graphene / cadmium telluride solar cell enhanced by cadmium selenide obtained is attached figure 2 As shown, the ...

Embodiment 2

[0032] 2) Deposit 200 nm thick fluorine-doped tin oxide on a glass substrate by magnetron sputtering;

[0033] 3) Deposit an 8-micron-thick cadmium telluride layer on the fluorine-doped tin oxide layer using physical vapor deposition technology, and reserve an area for growing the first electrode on the FTO layer;

[0034] 4) Transfer three layers of graphene onto the cadmium telluride layer;

[0035] 5) Spraying the cadmium selenide quantum dot solution on the graphene, and reserve the area for growing the second electrode on the graphene layer; the diameter of the cadmium selenide quantum dot is 1nm-1μm;

[0036] 6) Thermally evaporate gold electrodes on the reserved area of ​​the graphene layer and the reserved area on the fluorine-doped tin oxide layer; obtain a graphene / cadmium telluride solar cell enhanced by cadmium selenide.

[0037] Example 3:

Embodiment 3

[0039] 2) Deposit 60nm-thick nickel metal on a ceramic substrate by electron beam evaporation;

[0040] 3) Deposit a cadmium telluride layer with a thickness of 5 microns on the nickel metal layer by chemical water bath method, and reserve an area for growing the first electrode on the nickel metal layer;

[0041] 4) Transfer 10 layers of graphene onto the cadmium telluride layer;

[0042] 5) Prepare a cadmium selenide film on graphene, and reserve an area for growing the second electrode on the graphene layer;

[0043] 6) Silver electrodes are screen-printed on the reserved area of ​​the graphene layer and the reserved area on the nickel metal layer; a cadmium selenide-enhanced graphene / cadmium telluride solar cell is obtained.

[0044] Example 4:

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a graphene / cadmium telluride solar battery intensified by cadmium selenide and a preparation method thereof. The graphene / cadmium telluride solar battery sequentially comprises a substrate, a conductive coated film layer, a cadmium telluride layer, a graphene layer and a cadmium selenide layer; the solar battery is further provided with a first electrode and a second electrode, the first electrode is arranged on the conductive coated film layer, and the second electrode is arranged on the graphene layer. The preparation method of the graphene / cadmium telluride solar battery comprises steps as follows: the conductive coated film layer is deposited on the substrate first, and then the cadmium telluride layer is deposited; then graphene is transferred to the cadmium telluride layer; the cadmium selenide layer is prepared on the graphene layer; finally, the electrodes are prepared on the graphene layer and the conductive coated film layer respectively to obtain the solar battery. A photoproduction doping effect introduced by the cadmium selenide is used for obtaining the graphene / cadmium telluride solar battery with high transformation efficiency, the process is simple, and popularization is facilitated.

Description

technical field [0001] The invention relates to a novel solar cell and a manufacturing method thereof, in particular to a cadmium selenide-enhanced graphene / cadmium telluride solar cell and a preparation method thereof, belonging to the technical field of solar cells. Background technique [0002] As a new type of green energy, solar cells are the most important renewable energy for the sustainable development of human beings. Currently, crystalline silicon solar cells account for ~90% of the market. However, compared with conventional power generation, the cost of solar cell power generation is still high, which limits its wide application. One of the reasons for the high cost of solar cell power generation is the high cost of cell manufacturing and low photoelectric conversion efficiency. [0003] Since the discovery of graphene materials, its excellent properties in electricity, optics, magnetism and mechanics, such as extremely high carrier mobility, high light transmi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0352H01L31/06H01L31/18
CPCH01L31/0296H01L31/0725H01L31/074H01L31/18Y02E10/50Y02P70/50
Inventor 林时胜李晓强陈红胜骆季奎李尔平王朋章盛娇徐志娟
Owner ZHEJIANG UNIV
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com