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A kind of ultraviolet detector and preparation method thereof

A technology for ultraviolet detectors and preparation steps, applied in the field of ultraviolet detectors, can solve the problems of limited sustainable development and limited geological reserves, and achieve the effects of reducing device costs, high yield, and easy corrosion

Active Publication Date: 2017-04-19
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In is a rare and precious metal with extremely limited geological reserves, and its sustainable development is greatly restricted

Method used

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  • A kind of ultraviolet detector and preparation method thereof
  • A kind of ultraviolet detector and preparation method thereof
  • A kind of ultraviolet detector and preparation method thereof

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preparation example Construction

[0034] The preparation method of the ultraviolet detector of the present invention, the steps include such as image 3 Shown are a substrate preparation step ( S10 ), a photoactive layer forming step ( S20 ), and a metal electrode forming step ( S31 ) and a metal electrode etching step ( S32 ) for forming a metal electrode.

[0035] First, carry out the substrate preparation step (S10), select the substrate, and select the substrate according to the preparation of the subsequent photoactive layer, etc., which can be single crystal silicon wafer, sapphire, quartz, glass, polycarbonate or phthalate Esters etc.

[0036] Next, the preparation of the photoactive layer of the ultraviolet detector is carried out on the substrate, that is, the step of forming the photoactive layer (S20). In the present invention, the photoactive layer is the amorphous oxide thin film Zn 4 al x sn 7 o 1.5x+18 The common production methods include magnetron sputtering method, chemical vapor depositi...

example 1

[0038] Example 1: Preparation of Zn 4 al x sn 7 o 1.5x+18 (x=0) Amorphous oxide film as a UV detector for the photoactive layer.

[0039] I) Preparation of the quartz substrate.

[0040] II) The photoactive layer is the amorphous oxide thin film Zn 4 al x sn 7 o 1.5x+18 Formation of (x=0):

[0041] 1) The weighed Zn(NO 3 ) 2 ·6H 2 O and SnCl 2 +NH 4 NO 3 Dissolve in dimethoxyethanol + acetylacetone + 14.5 M ammonia solution to form a precursor solution with a concentration of 0.2 M. When the Zn source is configured, the volume of dimethoxyethanol, acetylacetone and 14.5 M ammonia water The ratio is 25:1:0.57, and the volume ratio of the three when configuring the Sn source is 25:1:0.285; then stir at 30°C for 24 h, filter and mix evenly according to the ratio of Zn:Sn=4:7, and age for 24 h;

[0042] 2) The solution obtained after aging in step 1) was spin-coated on a quartz substrate to form a film. The spin-coating conditions were: the rotation speed was 220...

example 2

[0047] Example 2: Preparation of Zn 4 al x sn 7 o 1.5x+18 (x=0.5) Amorphous oxide film as a UV detector for the photoactive layer.

[0048] I) Preparation of the quartz substrate.

[0049] II) The photoactive layer is the amorphous oxide thin film Zn 4 al x sn 7 o 1.5x+18 (x=0.5) is formed:

[0050] 1) The weighed Zn(NO 3 ) 2 ·6H 2 O, Al(NO 3 ) 3 9H 2 O and SnCl 2 +NH 4 NO 3Dissolve in dimethoxyethanol + acetylacetone + 14.5 M ammonia solution to form a precursor solution with a concentration of 0.2 M, in which dimethoxyethanol, acetylacetone and 14.5M ammonia water are configured when Zn source and Al source are configured The volume ratio of the three is 25:1:0.57, and the volume ratio of the three is 25:1:0.285 when the Sn source is configured; then stir at 30°C for 12 h, and filter according to Zn:Al:Sn=4:0.5:7 Mix evenly and age for 18 hours;

[0051] 2) The solution obtained after aging in step 1) was spin-coated on a quartz substrate to form a film....

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Abstract

The invention discloses an ultraviolet detector, a preparation method of the ultraviolet detector and an amorphous oxide film serving as an optical activation layer of the ultraviolet detector. The ultraviolet detector comprises a substrate, the optical activation layer and a pair of electrodes, wherein the amorphous oxide film serves as the optical activation layer, the chemical formula of the amorphous oxide film is Zn4AlxSn7O<1.5x+18>, and the x is larger than or equal to zero and smaller than or equal to one. The preparation method of the ultraviolet detector comprises the steps of preparation of the substrate, forming of the optical activation layer and forming of the metal electrodes, wherein the step of forming of the optical activation layer comprises the step that the amorphous oxide film with the chemical formula of Zn4AlxSn7O<1.5x+18> is formed through a low-temperature chemical reaction method. According to the prepared ultraviolet detector, the dark current ranges from 10<-9>A to 10<-6>A, the light current ranges from 10<-8>A to 10<-5>A, and the response sensitivity ranges from 10 to 50. The preparation method of the ultraviolet detector is easy to operate and low in cost, and the prepared ultraviolet detector has the advantages of being high in detection sensitivity and having important application value in the fields of the military and civil application.

Description

technical field [0001] The invention relates to the field of ultraviolet detectors, in particular to an amorphous oxide semiconductor ultraviolet detector and a preparation method thereof. Background technique [0002] Ultraviolet detection technology has very important applications in many fields such as military and civilian. In the military, ultraviolet detection technology can be used in missile guidance, missile early warning, ultraviolet communication and other fields. In civil use, ultraviolet detection technology can be used as ultraviolet measurement and flame detection in fuel engineering and ultraviolet water purification treatment. The current practical UV detectors are mainly based on vacuum UV photomultiplier tubes and Si-based UV photodiodes. Ultraviolet photomultiplier tubes have the advantages of low dark current, fast response speed, high stability and high current gain, and at present this kind of ultraviolet detection has been fully practical, and the m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/09H01L31/076H01L31/032H01L31/20
CPCH01L31/032H01L31/095H01L31/20H01L31/208Y02E10/548Y02P70/50
Inventor 吕建国江庆军孙汝杰冯丽莎朱恒伟
Owner ZHEJIANG UNIV