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Silicon carbide embedded electrode planar photoconductive switch and manufacturing method thereof

A photoconductive switch, silicon carbide technology, applied in the field of microelectronics, can solve the problems of large size of switching devices, high current density, low electron hole mobility, etc., to improve the field strength of breakdown resistance and reduce on-resistance. , the effect of mature technology

Inactive Publication Date: 2017-04-12
XIDIAN UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this structure, the carriers generated by light are fully transported on the surface, the current density on the surface is high, the mobility of electron holes is low, the on-resistance of the switch is large, and it is easy to occur at the edge of the ohmic electrode collecting carriers. Breakdown, the photoconductive switch is difficult to withstand high voltage under working conditions, and the size of the switching device is large

Method used

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  • Silicon carbide embedded electrode planar photoconductive switch and manufacturing method thereof
  • Silicon carbide embedded electrode planar photoconductive switch and manufacturing method thereof
  • Silicon carbide embedded electrode planar photoconductive switch and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Example 1, the depth of the grooves is 2 μm, SiO 2 An embedded planar photoconductive switch with a passivation layer thickness of 1μm and an ohmic contact electrode thickness of 80nm / 3μm.

[0032] Step 1: Etching the semi-insulating substrate.

[0033] Select a semi-insulating SiC substrate sample, use the magnetron sputtering method to form an aluminum film on the surface of the sample after cleaning as an etching mask layer, and use a photolithography plate to etch the required pattern on the surface of the sample on which the aluminum film is formed; After cleaning the etched pattern samples, use the inductively coupled plasma etching method to perform mesa etching on the surface to form two depths of 2 μm, both horizontal widths of 3 mm, vertical widths of 8 mm, and edge angles of 1 / 4 arc. grooves, such as image 3 a.

[0034]Step 2: Deposit SiO on the surface of the grooved sample 2 .

[0035] Clean the sample with two grooves formed by etching, and deposit a...

Embodiment 2

[0054] Example 2, the groove depth is 3.5 μm, SiO 2 An embedded planar photoconductive switch with a passivation layer thickness of 1.5μm and an ohmic contact electrode thickness of 90nm / 5μm.

[0055] Step 1: Etching the semi-insulating substrate.

[0056] Select a semi-insulating SiC substrate sample, use the magnetron sputtering method to form an aluminum film on the surface of the sample after cleaning as an etching mask layer, and use a photolithography plate to etch the required pattern on the surface of the sample on which the aluminum film is formed; After cleaning the patterned samples, the inductively coupled plasma etching method is used to etch the mesa on the surface to form two depths of 3.5 μm, a horizontal width of 3 mm, a vertical width of 8 mm, and an edge angle of 1 / 4 arc. grooves, such as image 3 a.

[0057] Step 2: Deposit SiO on the surface of the sample to form grooves 2 .

[0058] This step is the same as step 2 of embodiment 1, such as image 3 b...

Embodiment 3

[0073] Example 3, the depth of the grooves is 5 μm, SiO 2 An embedded planar photoconductive switch with a passivation layer thickness of 2μm and an ohmic contact electrode thickness of 100nm / 7μm.

[0074] Step A: Etching the semi-insulating substrate.

[0075] Select a semi-insulating SiC substrate sample, use the magnetron sputtering method to form an aluminum film on the surface of the sample after cleaning as an etching mask layer, and use a photolithography plate to etch the required pattern on the surface of the sample on which the aluminum film is formed; After cleaning the patterned samples, the inductively coupled plasma etching method is used to etch the surface of the table to form two depths of 5 μm, a horizontal width of 3 mm, a vertical width of 8 mm, and an edge angle of 1 / 4 arc. grooves, such as image 3 a.

[0076] Step B: Deposit SiO on the surface of the grooved sample 2 .

[0077] This step is the same as step 2 of embodiment 1, such as image 3 b.

...

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Abstract

The invention discloses a silicon carbide embedded electrode planar photoconductive switch and a manufacture method thereof, and mainly solves the problem in the prior art that the existing planar photoconductive switch is lower in withstand voltage under the same electrode span. The photoconductive switch comprises a semi-insulating silicon carbide substrate (1), a compact insulating oxidation layer (2) and an SiO2 passivation layer (3) from bottom to top, wherein two grooves (6 and 7) with the depths being 2 to 5 micrometers are formed in the two ends of the upper part of the semi-insulating silicon carbide substrate (1) and corresponding positions of the compact insulating oxidation layer (2) and the SiO2 passivation layer (3) in the upper layer of the surface of the semi-insulating silicon carbide substrate (1); a pair of ohmic contact electrodes (4 and 5) with the thickness being 3-7 micrometers is embedded into the two grooves (6 and 7). The silicon carbide embedded electrode planar photoconductive switch is smaller in on resistance and higher in voltage resistance property in the condition of the same breakdown voltage, ensures that the size can be further reduced, and can be applied to high-speed and high-power pulse system.

Description

technical field [0001] The invention belongs to the field of microelectronics, in particular to an electrode planar photoconductive switch, which can be used as a switch in a high-speed and high-power pulse system. [0002] technical background [0003] In 1974, D.H.Auston of Bell Labs prepared the first photoconductive switch. The material used was high-resistance Si, but the Si bandgap width was small, the critical breakdown field strength was low, and there was fatal thermal collapse, so high-performance switches could not be obtained. Switch; In 1976, the first GaAs photoconductive switch was prepared by H.L.Chi of the University of Maryland, and it has been a hot spot in this field until now. With the maturity of wide-bandgap semiconductor material preparation technology, SiC has more and more research work on high-power photoconductive switches with high critical electric field and thermal conductivity. [0004] The document "APPLIED PHYSICS LETTERS 82,3107 (2003) "4H-...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/18H01L31/08
CPCH01L31/0224H01L31/08H01L31/18Y02P70/50
Inventor 郭辉宋朝阳蒋树庆梁佳博张玉明
Owner XIDIAN UNIV