Preparation method of SU-8 photoresist-based three-dimensional microelectrode

A SU-8, photoresist technology, applied in circuits, capacitors, electrical components, etc., can solve the problems of small specific surface area of ​​supercapacitor electrodes, and achieve the effect of facilitating mass production, increasing specific surface area, and simple preparation method

Inactive Publication Date: 2015-06-10
TAIYUAN UNIV OF TECH
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Problems solved by technology

[0005] The present invention provides a three-dimensional microelectrode preparation method based on SU-8 phot

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  • Preparation method of SU-8 photoresist-based three-dimensional microelectrode
  • Preparation method of SU-8 photoresist-based three-dimensional microelectrode
  • Preparation method of SU-8 photoresist-based three-dimensional microelectrode

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Embodiment Construction

[0022] The process flow of the three-dimensional microelectrode preparation method based on SU-8 photoresist of the present invention is as follows figure 1 As shown, the manufacturing steps are as follows:

[0023] Grind ferric chloride into particles with a particle size greater than 2nm and less than 50nm, then mix and stir with SU-8 photoresist evenly, and then remove ferric chloride by high-temperature sublimation in the carbonization step to effectively control the pore size;

[0024] Select a 2-inch silicon wafer as the substrate, and wash the silicon wafer substrate in acetone, alcohol, sulfuric acid / hydrogen peroxide, ammonia water / hydrogen peroxide, hydrochloric acid / hydrogen peroxide solution to remove oil stains, oxide films and metal ions. After standard cleaning of the silicon wafer substrate, as image 3 As shown, the groove structure of "narrow mouth and wide inside" is etched on the silicon wafer substrate to prevent the SU-8 carbon nanotubes obtained after ca...

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Abstract

The invention relates to the technical field of MEMS (Micro Electro Mechanical System), particularly to a preparation method of an SU-8 photoresist-based three-dimensional microelectrode. The method specifically comprises doping nanoscale ferric chloride particles into SU-8 photoresist through a doping method; etching a groove structure with narrow mouth and wide inside in a silicon substrate; spinning the doped SU-8 photoresist onto the silicon substrate with the groove structure; preparing an SU-8 photoresist three-dimensional microelectrode array through the oblique photoetching micromachining technology; carbonizing the electrode array inside a carbonizing device to obtain an SU-8 carbon nanotube; depositing graphene onto the SU-8 carbon nanotube to form an SU-8 carbon nanotube electrode; filing liquid or colloidal electrolyte inside the prepared SU-8 carbon nanotube electrode. According to the preparation method of the SU-8 photoresist-based three-dimensional microelectrode, the aperture of the SU-8 nanotube is controlled and adjusted through the doping method; through combination of the oblique photoetching technology, the specific surface area of the three-dimensional carbon nanotube electrode can be effectively enlarged; compared with traditional capacitor electrode structures, the SU-8 photoresist-based three-dimensional microelectrode greatly improve the energy density and power density of super-capacitors.

Description

technical field [0001] The invention relates to the technical field of micro-electromechanical systems (Micro Electro Mechanical System, MEMS), in particular to a three-dimensional micro-electrode preparation method based on SU-8 photoresist. Background technique [0002] With the advancement of information technology, high-end electronic equipment is developing in the direction of miniaturization, portability, and long life. Capacitors in electronic equipment are required to have large capacity, high power density, and small size. However, traditional micro batteries have disadvantages such as low charge and discharge efficiency, limited number of cycles, no high-power charge and discharge capability, and poor safety. Therefore, there is an urgent need to develop a supercapacitor with small size, high efficiency, high energy and power density, and long service life. [0003] As a new type of energy storage device, supercapacitors have the advantages of high output power, s...

Claims

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Application Information

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IPC IPC(8): H01G9/048
CPCY02E60/13
Inventor 赵清华史健芳李刚郭丽芳李大维张君慧马洋淡富奎
Owner TAIYUAN UNIV OF TECH
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