Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Novel electromagnetic shielding textile fabric and preparation method thereof

A technology of anti-electromagnetic radiation and textile fabrics, applied in the field of textile processing, to achieve the effect of easy industrial production, excellent electrical conductivity and electromagnetic shielding performance, and soft hand feeling

Inactive Publication Date: 2015-06-24
JIANGNAN UNIV +1
View PDF7 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In view of the deficiencies and shortcomings of the prior art, the primary purpose of the present invention is to provide a new type of anti-electromagnetic radiation textile fabric and its preparation method, which is required to have excellent anti-electromagnetic radiation performance, and at the same time, the method is simple to process, low in cost, and pollution-free. , to facilitate the realization of industrial production, to meet the needs of production and life

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel electromagnetic shielding textile fabric and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] (1) Cleaning: Select pure cotton fabrics, put them into acetone solution, and ultrasonically wash them for 30 minutes to remove organic solvents, dust and other impurities on the surface, then rinse them repeatedly with deionized water and dry them in an oven at 45°C.

[0019] (2) Sputtering: Put the pretreated substrate on the sample holder in the sputtering chamber, the distance between the target and the fabric substrate is 70mm; use a water cooling device to cool the substrate; pump the reaction chamber to the background vacuum , and then rush into the high-purity argon gas with a volume fraction of 99.999% as the sputtering gas; the specific sputtering process parameters are as follows: first, the silver target is sputtered, the sputtering power is 60W, the sputtering pressure is 0.8Pa, and the sputtering time is 20min; When sputtering the copper target next, the sputtering power is 60W, the sputtering pressure is 0.8Pa, and the sputtering time is 10min; 2 target, ...

Embodiment 2

[0021] (1) Cleaning: Select pure cotton fabrics, put them into acetone solution, and ultrasonically wash them for 35 minutes to remove organic solvents, dust and other impurities on the surface, then rinse them repeatedly with deionized water and dry them in an oven at 45°C.

[0022] (2) Sputtering: Put the pretreated substrate on the sample holder in the sputtering chamber, the distance between the target and the fabric substrate is 70mm; use a water cooling device to cool the substrate; pump the reaction chamber to the background vacuum , and then rush into the high-purity argon gas with a volume fraction of 99.999% as the sputtering gas; the specific sputtering process parameters are as follows: first, the silver target is sputtered, the sputtering power is 60W, the sputtering pressure is 1Pa, and the sputtering time is 10min; When sputtering the copper target, the sputtering power is 100W, the sputtering pressure is 1Pa, and the sputtering time is 20min; finally, TiO 2 Tar...

Embodiment 3

[0024] (1) Cleaning: Select polyester-cotton blended fabric, put it into acetone solution, and ultrasonically wash it for 30 minutes to remove organic solvents, dust and other impurities on the surface, then rinse it repeatedly with deionized water and put it in an oven at 50°C for drying .

[0025] (2) Sputtering: Put the pretreated substrate on the sample holder in the sputtering chamber, the distance between the target and the fabric substrate is 100mm; use a water cooling device to cool the substrate; pump the reaction chamber to the background vacuum , and then rush into the high-purity argon gas with a volume fraction of 99.999% as the sputtering gas; the specific sputtering process parameters are as follows: first, the silver target is sputtered, the sputtering power is 80W, the sputtering pressure is 1.2Pa, and the sputtering time is 20min; When sputtering the copper target next, the sputtering power is 80W, the sputtering pressure is 1.2Pa, and the sputtering time is ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses novel electromagnetic shielding textile fabric and its preparation method and belongs to the field of textile processing. By a magnetron sputtering technology, nano-silver, nano-copper and nanometer titania particles are respectively sputtered onto a fabric base material to form an uniform nanocomposite film so as to obtain the electromagnetic shielding fabric. The electromagnetic shielding fabric for children's garments has advantages of simple preparation technology, low cost, high binding strength of the film and the base material, uniformly and compactly distributed film, strong adhesive force and no environmental pollution, and has excellent electrical conductivity and electromagnetic shielding performance. Resistance can be less than 10 omega / cm, SE value reaches about 28dB, and more than 99% of electromagnetic wave is shielded. By means of rapid heat-conducting property of metal, the fiber fabric can have effects of regulating body temperature and making the winter warm and the summer cool. In addition, the fabric feels very soft and has excellent resistance to water washing.

Description

technical field [0001] The invention relates to a functional fabric, in particular to a novel anti-electromagnetic radiation textile fabric, which belongs to the field of textile processing. Background technique [0002] With the increasing popularity of electronic products in people's lives, the impact of electromagnetic waves on human health is becoming more and more obvious. How to reduce the damage caused by electromagnetic radiation to human body has attracted more and more attention. The human body is exposed to electromagnetic radiation for a long time, and the nervous system, cardiovascular system, endocrine system, reproductive system, etc. will be damaged to varying degrees. This is even more important for children who are growing up. In order to protect children from or minimize the harm of electromagnetic radiation, on the one hand, people shield the source of electromagnetic radiation to reduce the amount of radiation, and on the other hand, develop effective p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): D06M11/83D06M10/08C23C14/35C23C14/20C23C14/08D06M101/06D06M101/32D06M101/30
Inventor 乔辉罗磊陈克张玄朱倩颖蔡以兵魏取福徐阳
Owner JIANGNAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com