White-light light emitting diode and preparation method thereof

A technology of light-emitting diodes and white light, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of complex composition of phosphors, poor color temperature uniformity, high ratio requirements, etc., achieve no ultraviolet environment, friendly, easy to operate at low cost , the effect of low color temperature

Inactive Publication Date: 2015-07-29

HUAZHONG UNIV OF SCI & TECH

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Problems solved by technology

[0006] In view of the above defects or improvement needs of the prior art, the present invention provides a white light-emitting diode and its preparation method, which is based on the antimony-doped p-type zinc oxide/n-type gallium nitride heterojunct...

Abstract

The invention discloses a white-light light emitting diode. The white-light light emitting diode is characterized by comprising an n-type gallium nitride film, an antimony doped p-type zinc oxide nanowire array and a positive electrode which are sequentially stacked from the bottom up, wherein the n-type gallium nitride film is contacted with the antimony doped p-type zinc oxide nanowire array to form a heterojunction so as to act as a white-light light emitting layer, the positive electrode is contacted with the antimony doped p-type zinc oxide nanowire array so as to act as a working positive electrode, the n-type gallium nitride film is provided with a negative electrode thereon, and the negative electrode is contacted with the n-type gallium nitride film so as to act as a working negative electrode. The invention further discloses a preparation method of the white-light light emitting diode. Compared with a traditional white-light light emitting diode device, the white-light light emitting diode is simple in process, provided with low color temperature, free of ultraviolet rays, high in safety and suitable for life lighting, and plays an important role in pushing household lighting applications of the white-light light emitting diode in China.

Application Domain

Semiconductor devices

Technology Topic

Gallium nitrideColor temperature +9

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Examples

Experimental program(4)

Example Embodiment

[0048] The preparation method of the white light emitting diode of the present invention includes the following steps:

[0049] Step 1. Take the n-type gallium nitride substrate for cleaning, use acetone, alcohol and deionized water to clean sequentially under ultrasound, and finally dry it in an oven.

[0050] Step 2. Sputter gold particles uniformly on the n-type gallium nitride film as a catalyst for the reaction;

[0051] Step 3. Prepare a mixed sample of antimony oxide, zinc oxide, and carbon powder as reactants;

[0052] Step 4. Take the mixed sample of step 3 into a quartz boat, put the reaction substrate into a quartz glass tube, and put the two into a low-temperature furnace for chemical vapor deposition reaction to grow antimony-doped p on the n-type gallium nitride film -Type zinc oxide nanowire array, forming a heterojunction;

[0053] Step 5. Use metal indium and antimony doped p-type zinc oxide nanowire array top contact as the positive electrode;

[0054] Step 6. Use the indium gold electrode and the n-type gallium nitride film surface contact as the negative electrode;

[0055] Step 7. Perform heat treatment and annealing on the positive and negative electrodes to form a heterojunction white light emitting diode.

[0056] Through the above preparation method, the white light emitting diode of the embodiment of the present invention can be prepared.

Example Embodiment

[0058] Example one:

[0059] In this embodiment, the manufacturing method of the white light emitting diode includes the following steps:

[0060] 1)Reaction substrate cleaning and raw material preparation

[0061] Cut the n-type gallium nitride wafer into 5mm*5mm squares of uniform specifications, put them into a beaker, and sequentially clean in acetone solution at 50℃ for 15 minutes, in ethanol solution at room temperature for 10 minutes, and repeat in high-purity deionized water. Ultrasound for 2 minutes each time. After the substrate is cleaned, it is placed in a clean oven and dried to obtain a clean reaction substrate.

[0062] Then prepare the raw materials for the reaction. The mass ratio of zinc oxide powder to carbon powder is 1:1, and the molar ratio of zinc oxide to antimony oxide powder is 1:1/20. The three powders are put into a beaker, and the ethanol solution is poured into the magnet. , Use a heating magnetic stirrer to heat and stir into a slurry, and put the powder slurry in a 200 ℃ oven for further drying to become a uniform and fine powder.

[0063] 2) Growth of antimony-doped zinc oxide nanowire array

[0064] Choose a clean n-type gallium nitride substrate and 0.5 g of mixed powder, put the powder into a quartz boat, put the substrate into a single-ended closed quartz glass tube, and put it into a low-temperature furnace with a dual temperature zone. The antimony-doped zinc oxide nanowire array was prepared by chemical vapor deposition method. In this embodiment, it is preferable that the temperature of the powder reaction zone is 930°C, the temperature of the reaction substrate is 880°C, the heating temperature of both is 50°C per minute, the reaction pressure is about 50 Pa, the reaction time is 20 minutes, and the carrier gas is argon. The gas is 49 sccm, and the reaction gas oxygen is 0.5 sccm. After the reaction is completed, the antimony-doped zinc oxide nanowire array is taken out.

[0065] The entire reaction is completed in the next step under the conditions of high-clean quartz tube, ultra-pure powder, ultra-pure gas, high temperature and low pressure.

[0066] 3) Electrode production

[0067] Such as figure 1 , Deposit metal indium on the p-type antimony-doped zinc oxide nanowire array as the positive electrode, remove part of the zinc oxide nanowire array with hydrochloric acid to leave an n-type gallium nitride film, and deposit gold and indium as the negative electrode respectively.

[0068] 4) Fabrication of white light emitting diodes

[0069] Put the prepared electrode in a muffle furnace for electrode annealing to form an ohmic contact, preferably at a temperature of 300°C for 5 minutes.

[0070] Analysis of antimony-doped zinc oxide nanowire array as p-type semiconductor

[0071] In this embodiment, for the antimony-doped zinc oxide nanowire array, a simple electrical test-IV curve can preferably be used to illustrate the characteristics of its p-type semiconductor. Figure 4 It shows good diode characteristics, and explains the p-type characteristics of antimony-doped zinc oxide.

[0072] Electroluminescence Spectroscopy Analysis of White Light Emitting Diode

[0073] Such as Figure 5 a. To apply electroluminescence spectra with a voltage from 4V to 16V on the device. From the analysis of the luminescence spectrum, when the voltage is 4V to 14V, the luminescence spectrum is in the visible light spectrum and ultraviolet rays are suppressed. The voltage is increased to 16V The ultraviolet light is triggered. Figure 5 b is the linear growth graph of the spectral intensity of the emission spectrum with the voltage.

[0074] The physical display and color temperature analysis of white light emitting diodes

[0075] Such as Image 6 a is the physical picture of the white light emitting diode, Image 6 b is the white light emitting diode chromaticity diagram, which is 3500K low-color warm white light, Image 6 c is the color temperature diagram of white light emitting diodes under different voltages, showing the stability of excellent temperature.

Example Embodiment

[0076] Example two

[0077] In this embodiment, the manufacturing method of the white light emitting diode includes the following steps:

[0078] 1)Reaction substrate cleaning and raw material preparation

[0079] In this embodiment, the reaction substrate cleaning is different from the first embodiment in that the substrate treatment is treated with hydrochloric acid, soaked at room temperature for 48 hours, then repeatedly ultrasonically cleaned with deionized water, and dried. The raw materials of zinc oxide powder and antimony oxide powder The molar ratio of the mixing ratio becomes 1:1/10, and other parameters remain unchanged.

[0080] 2) Growth of antimony-doped zinc oxide nanowire array

[0081] In this embodiment, the difference from the first embodiment is that 0.3 g of the mixed powder is taken, the reaction temperature is changed to 950°C, and other conditions remain unchanged.

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White-light light emitting diode and preparation method thereof

AI-Extracted Technical Summary

Problems solved by technology

Abstract

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Examples

Example Embodiment

Example Embodiment

Example Embodiment

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Description & Claims & Application Information

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