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White-light light emitting diode and preparation method thereof

A technology of light-emitting diodes and white light, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of complex composition of phosphors, poor color temperature uniformity, high ratio requirements, etc., achieve no ultraviolet environment, friendly, easy to operate at low cost , the effect of low color temperature

Inactive Publication Date: 2015-07-29
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the above defects or improvement needs of the prior art, the present invention provides a white light-emitting diode and its preparation method, which is based on the antimony-doped p-type zinc oxide / n-type gallium nitride heterojunction structure to achieve full-interface recombination, Solve the problems of low color rendering, poor color temperature uniformity, difficult light mixing, complex phosphor components, high ratio requirements, and poor stability in current white LEDs

Method used

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  • White-light light emitting diode and preparation method thereof
  • White-light light emitting diode and preparation method thereof
  • White-light light emitting diode and preparation method thereof

Examples

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preparation example Construction

[0048] The preparation method of the white light emitting diode of the present invention comprises the following steps:

[0049] Step 1. Take the n-type gallium nitride substrate for cleaning, use acetone, alcohol and deionized water to clean in sequence under ultrasonic, and finally put it in an oven to dry.

[0050] Step 2. uniformly sputtering gold particles on the n-type gallium nitride film as a catalyst for the reaction;

[0051] Step 3. prepare antimony oxide, zinc oxide, carbon powder mixed sample as reactant;

[0052] Step 4. Take the mixed sample in step 3 and put it into a quartz boat, put the reaction substrate into a quartz glass tube, put the two into a low-temperature furnace for chemical vapor deposition reaction, and grow antimony-doped p ZnO nanowire arrays to form heterojunctions;

[0053] Step 5. Use metal indium and antimony doped p-type zinc oxide nanowire array top contacts as positive electrodes;

[0054] Step 6. Use the indium gold electrode and the...

Embodiment 1

[0059] In this embodiment, the preparation method of white light emitting diodes includes the following steps:

[0060] 1) Reaction substrate cleaning and preparation of raw materials

[0061] Cut the n-type gallium nitride wafer into a square of 5mm*5mm uniform size, put it into a beaker, and then ultrasonically clean it in acetone solution at 50°C for 15 minutes, then in ethanol solution at room temperature for 10 minutes, and repeat in high-purity deionized water. Ultrasound, 2 minutes each time, after the substrate is cleaned, put it into a clean oven for drying to obtain a clean reaction substrate.

[0062] Then prepare the raw materials for the reaction, put the zinc oxide powder and carbon powder in a mass ratio of 1:1, and the molar ratio of zinc oxide and antimony oxide powder in a 1:1 / 20, put the three powders into a beaker, pour the ethanol solution, and put the magnet , Use a heating magnetic stirrer to heat and stir to form a slurry, put the powder slurry into a ...

Embodiment 2

[0077] In this embodiment, the preparation method of white light emitting diodes includes the following steps:

[0078] 1) Reaction substrate cleaning and preparation of raw materials

[0079] In this example, the difference between the cleaning of the reaction substrate and that of Example 1 is that the substrate is treated with hydrochloric acid, soaked at room temperature for 48 hours, and then repeatedly ultrasonically cleaned with deionized water and dried. The raw materials of zinc oxide powder and antimony oxide powder The proportioning molar ratio becomes 1:1 / 10, and other parameters remain unchanged.

[0080] 2) Growth of Sb-doped ZnO nanowire arrays

[0081] In this example, the difference from Example 1 is that 0.3 g of mixed powder is taken, the reaction temperature is changed to 950° C., and other conditions remain unchanged.

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Abstract

The invention discloses a white-light light emitting diode. The white-light light emitting diode is characterized by comprising an n-type gallium nitride film, an antimony doped p-type zinc oxide nanowire array and a positive electrode which are sequentially stacked from the bottom up, wherein the n-type gallium nitride film is contacted with the antimony doped p-type zinc oxide nanowire array to form a heterojunction so as to act as a white-light light emitting layer, the positive electrode is contacted with the antimony doped p-type zinc oxide nanowire array so as to act as a working positive electrode, the n-type gallium nitride film is provided with a negative electrode thereon, and the negative electrode is contacted with the n-type gallium nitride film so as to act as a working negative electrode. The invention further discloses a preparation method of the white-light light emitting diode. Compared with a traditional white-light light emitting diode device, the white-light light emitting diode is simple in process, provided with low color temperature, free of ultraviolet rays, high in safety and suitable for life lighting, and plays an important role in pushing household lighting applications of the white-light light emitting diode in China.

Description

technical field [0001] The invention belongs to the technical field of semiconductor lighting, and in particular relates to a white light emitting diode and a preparation method thereof. technical background [0002] Semiconductor lighting is one of the most promising high-tech fields in this century. White LED will become a new generation of light source in the 21st century. Waste, short life, stroboscopic, ultraviolet and infrared radiation, and fluorescent lamps with relatively low color rendering index, white LED has the advantages of low voltage, low energy consumption, long life, high reliability, vibration and impact resistance, and easy maintenance. , in line with the energy-saving and environmental protection requirements of green lighting projects, is an eye-catching green light source, and is currently generally believed to be a new type of solid light source that may replace incandescent lamps and fluorescent lamps, and has a broad market and potential lighting a...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/26
CPCH01L33/325H01L33/007H01L33/40H01L2933/0008H01L2933/0016
Inventor 高义华任小亮张翔晖刘逆霜
Owner HUAZHONG UNIV OF SCI & TECH
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