A chamber structure of a reaction chamber for a solar cell dry texturing process

A solar cell and dry texturing technology, which is applied in sustainable manufacturing/processing, circuits, electrical components, etc., can solve the difficulty of connecting reaction chambers with gate valves and other chambers, the difficulty of processing large reaction chambers, and the overall size of equipment Increase and other problems to achieve the effect of convenient disassembly and assembly, reduced processing difficulty, and reduced delivery costs

Active Publication Date: 2017-03-01
CHANGZHOU BITAI TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The main disadvantages of this method are: (1) It is difficult and expensive to process a large reaction chamber; (2) Since the large chamber is under vacuum pressure, and the strength of the aluminum alloy is relatively low, the thickness of the chamber wall increases, and the overall size of the equipment (3) It is relatively difficult to connect the reaction chamber with the gate valve and other chambers

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  • A chamber structure of a reaction chamber for a solar cell dry texturing process
  • A chamber structure of a reaction chamber for a solar cell dry texturing process
  • A chamber structure of a reaction chamber for a solar cell dry texturing process

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[0021] Such as figure 1 Shown is a schematic diagram of plasma etching (RIE) process reaction chamber corrosion. 1. Indicates the entrance of process chemical gas; 2. It is the process reaction chamber; 3. It is the upper parallel electrode plate; 4. It is RF radio frequency power supply; 6. Indicates the precipitation and pollution of metal ions due to the corrosion of the cavity; 7. Indicates the etching of silicon wafers by F and Cl free radicals produced by chemical gases; 8. is plasma; 9. is a vacuum pump; 10. is The lower parallel electrode plate; 11, is a wafer. The RF power supply 4 applies high-frequency voltage to the parallel electrode plates 3 and 10 to discharge the low-pressure chemical gas in the cavity to generate plasma. This chemically active plasma 8 is usually produced by the discharge of chlorine and fluorocarbon gases. It not only contains electrons and ions, but also a large number of active free radicals, such as Cl, F, Cl-, F-, etc. The F and Cl rad...

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Abstract

The invention relates to the solar cell manufacturing equipment, plasma etching, and vacuum reaction chamber technology fields and especially relates to a cavity structure of a reaction chamber used in a solar cell dry method texturing technology. A cavity main body is formed through assembling and welding a plurality of stainless steel sheet materials. Surfaces of the stainless steel sheet materials are sprayed and plated with a teflon coating. A teflon coating surface is inlaid with a detachable aluminum alloy liner armor plate. The teflon coating is a PTFE, PFA or FEP material. Sand blasting is performed on the stainless steel sheet material surfaces. The aluminum alloy liner armor plate is an aluminum plate or an aluminum liner armor plate whose surface is processed through deep anodic oxidation. By using the cavity structure of the invention, processing difficulty is decreased and commissioning cost is reduced; deformation is small under vacuum pressure of a large-scale cavity; dismounting is convenient and a problem that connections between the reaction chamber and a gate valve, and the reaction chamber and other cavities are difficult is effectively solved; the aluminum alloy liner armor plate possesses chemical corrosion resistance performance; bombardment of high-energy particles to the coating can be effectively blocked and there is no metal ion pollution to a silicon wafer.

Description

technical field [0001] The invention relates to the technical fields of solar cell sheet manufacturing equipment, plasma etching, and vacuum reaction chambers, in particular to a chamber structure of a reaction chamber used in the dry texturing process of solar cells. Background technique [0002] Plasma etching (RIE) is widely used in the manufacture of microelectronic devices, including semiconductor chips, liquid crystal display thin-film transistor (TFT) drivers, micro-motor systems, solar dry texturing, etc. Its basic idea is that precursor gases containing fluorine and chlorine (such as SF 6 , CF 4 ,CCl 4 , Cl 2 etc.) Under the action of plasma, the free radicals and ions with strong chemical activity such as F and Cl are ionized to etch the substrate surface. In order to form a plasma, it needs to be realized in a vacuum chamber. In general, an effective material capable of withstanding vacuum pressure is steel. But steel or iron can react chemically with F or C...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18
CPCH01L31/18Y02P70/50
Inventor 黄培恩谭兴波贾云涛上官泉元
Owner CHANGZHOU BITAI TECH
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