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A kind of preparation method of silicon chip master alloy

A master alloy and silicon wafer technology, applied in the field of semiconductor doping, can solve the problems of secondary pollution and inaccurate weighing, and achieve the effects of low reduction power consumption, low solid solubility, and contact area.

Active Publication Date: 2018-03-23
XINTE ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The technical problem to be solved by the present invention is to provide a method for preparing a silicon chip master alloy for the above-mentioned deficiencies in the prior art. The silicon chip master alloy prepared by the method is a granular silicon chip master alloy, which can be continuously added Raw materials, and reduce the cost of the silicon wafer master alloy produced, increase output, the silicon wafer master alloy obtained in the prior art is a bulky whole, the present invention effectively solves the problem of using the silicon wafer master alloy obtained in the prior art Unable to accurately weigh in the process and the secondary pollution introduced in the secondary crushing process

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034]This embodiment provides a method for preparing a P-type silicon chip master alloy, comprising the following steps:

[0035] (1) Pass the refined chlorosilane gas (one or more of monosilane, silicon tetrachloride, silicon trichloride, and silicon dichloride) in the silicon source gas storage tank through the adsorption column filled with adsorbent , wherein the adsorbent includes functional resin, modified silica gel, modified molecular sieve, modified activated carbon, and modified alumina, and the metal impurities in the doped refined chlorosilane are removed by adsorption, wherein the metal impurities include: iron , copper, calcium and zinc to obtain refined chlorosilane gas after adsorption.

[0036] (2) Transport the adsorbed refined chlorosilane gas to the fluidized bed reactor, transport aluminum chloride to the fluidized bed reactor with hydrogen as the carrier gas, and feed the seed crystal into the fluidized bed reactor And make the seed crystal fluidized, wh...

Embodiment 2

[0042] This embodiment provides a method for preparing a P-type silicon chip master alloy, comprising the following steps:

[0043] (1) Pass the silicon source gas in the storage tank as monosilane gas through the adsorption column filled with adsorbents, where the adsorbents include functional resins, modified silica gel, modified molecular sieves, modified activated carbon, and modified alumina. The metal impurities in the doped monosilane are adsorbed and removed, wherein the metal impurities include: iron, copper, calcium, zinc, aluminum, and the adsorbed monosilane gas is obtained.

[0044] (2) Transport the adsorbed monosilane gas to the fluidized bed reactor, transport the mixture of aluminum chloride and boron chloride to the fluidized bed reactor with nitrogen as the carrier gas, and send it to the fluidized bed reactor Introduce the seed crystal and make the seed crystal fluidized, wherein the molar ratio of the sum of the moles of monosilane gas to the mixture of al...

Embodiment 3

[0048] This embodiment provides a method for preparing a P-type silicon chip master alloy, comprising the following steps:

[0049] (1) Pass the mixed gas of silicon tetrachloride, silicon trichloride and silicon dichloride in the silicon source gas storage tank through the adsorption column filled with adsorbents, where the adsorbents include functional resin, modified silica gel, modified Molecular sieves, modified activated carbon, and modified alumina are used to adsorb and remove metal impurities in the mixed gas of doped silicon tetrachloride, silicon trichloride, and silicon dichloride by adsorption, and the metal impurities include copper. A mixed gas of silicon tetrachloride, silicon trichloride and silicon dichloride after adsorption is obtained.

[0050] (2) Transport the mixed gas of silicon tetrachloride, silicon trichloride and silicon dichloride after adsorption to the fluidized bed reactor, and use argon as the carrier gas to transport borane into the fluidized...

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Abstract

The invention discloses a preparation method of a silicon wafer master alloy. The method comprises the steps of mixing refined silicon source gas with trichloride of group IIIA element, hydride of group IIIA element, trichloride of group VA element, and trichloride of group VA element. One or more of the hydrides of group VA elements are passed into the fluidized bed reactor, and seed crystals are passed into the fluidized bed reactor and the seed crystals are fluidized, and silicon wafers are prepared by thermal decomposition reaction Master alloy, wherein the group IIIA element is boron or aluminum, and the group VA element is phosphorus or arsenic. The silicon wafer master alloy prepared by the method is a granular silicon wafer master alloy, and raw materials can be continuously added, thereby reducing the cost of the produced silicon wafer master alloy and increasing the output. The silicon wafer master alloy prepared in the prior art is a block. The invention effectively solves the problems of inability to accurately weigh the silicon wafer master alloy prepared in the prior art during use and secondary pollution introduced in the secondary crushing process.

Description

technical field [0001] The invention belongs to the technical field of semiconductor doping, and in particular relates to a method for preparing a master alloy of a silicon chip. Background technique [0002] A solar cell, also known as a photovoltaic cell, is a semiconductor device that converts the sun's light energy directly into electrical energy. Because it is a green product, does not cause environmental pollution, and is a renewable resource, solar cells are a new energy source with broad development prospects in today's energy shortage situation. [0003] At present, in the production of solar-grade crystalline silicon materials, the control of its resistivity is realized by master alloys with specific resistivity. Photovoltaic polysilicon and quasi (similar) monocrystalline silicon need to perform resistivity compensation treatment on the silicon material during ingot casting or drawing, so that the resistivity of cast polycrystalline silicon ingots and quasi (simi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/14C30B29/06
Inventor 吕学谦孟华银波郭增昌范协诚
Owner XINTE ENERGY