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High-specific surface area nanometer mesoporous silicon carbide hollow ball and preparation method thereof

A mesoporous silicon carbide, high specific surface area technology, applied in the fields of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve the problem that the SiC hollow sphere structure cannot guarantee the integrity, the synthesis process is complex, synthesis temperature, Inability to mass-produce and other problems to achieve the effects of high integrity, low cost, and prevention of agglomeration

Inactive Publication Date: 2016-01-13
湖北朗驰新型材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Traditional methods such as carbothermal reduction reaction, self-propagating high-temperature synthesis, and polymer thermal decomposition have great limitations in the preparation of hollow-structure SiC. The synthesis process is quite complicated and the synthesis temperature is above 1300 °C or even 2000 °C, and the energy consumption is relatively high. Large, high cost, unable to mass-produce, and more importantly, the integrity of the synthesized SiC hollow sphere structure cannot be guaranteed [Vix-Guterlc, AlixI, GibotP.etal.ApplSurfSci[J],2003,210:329-337]

Method used

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  • High-specific surface area nanometer mesoporous silicon carbide hollow ball and preparation method thereof
  • High-specific surface area nanometer mesoporous silicon carbide hollow ball and preparation method thereof
  • High-specific surface area nanometer mesoporous silicon carbide hollow ball and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] (1) Add 30mlC 2 h 5 OH in 100ml distilled water, add 0.1gCTAB as a pore-forming agent, stir in a water bath at 35°C for 30min; then add 2ml of NH to the above solution 3 ·H 2 O continue to stir rapidly; then add 1ml of TEOS drop by drop, and stir vigorously at 35°C for 24h; 2 h 5 OH and distilled water were washed three times.

[0032] (2) Disperse the washed white sample in 160ml distilled water, place the dispersed solution in a constant temperature water tank and keep it warm at 20°C for 6 hours to prepare nano-SiO with uniform structure 2 hollow ball.

[0033] (3) by wet chemical method on SiO 2 The surface of the inner shell of the nano hollow sphere is coated with a layer of organic matter and the organic matter is embedded in the shell wall. The specific steps are: put 0.1g of SiO 2 The hollow spheres were ultrasonically dispersed in 100ml of distilled water, 0.1g of triblock copolymer was added, followed by 0.2g of Tris, stirred vigorously to clarify the ...

Embodiment 2

[0036] (1) Add 50mlC 2 h 5 OH in 250ml distilled water, add 0.5g CTAB as a pore-forming agent, stir in a water bath at 35°C for 30min; then add 3ml of NH to the above solution 3 ·H 2 O continue to stir rapidly; then add 2ml of TEOS drop by drop, and stir vigorously at 35°C for 24h; 2 h 5 OH and distilled water were washed three times.

[0037] (2) Disperse the washed white sample in 160ml distilled water, put the dispersed solution in a constant temperature water tank and keep it warm at 25°C for 12 hours to prepare nano-SiO with uniform structure 2 hollow ball.

[0038] (3) by wet chemical method on SiO 2 The surface of the inner shell of the nano hollow sphere is coated with a layer of organic matter and the organic matter is embedded in the shell wall. The specific steps are: put 0.5g of SiO 2 The hollow spheres were ultrasonically dispersed in 200ml of distilled water, 0.25g of triblock copolymer was added, followed by 0.5g of Tris, stirred vigorously to clarify the...

Embodiment 3

[0041] (1) Add 20mlC 2 h 5 OH in 250ml of distilled water, add 1gCTAB as a pore-forming agent, stir in a water bath at 35°C for 30min; then add 4ml of NH to the above solution 3 ·H 2 O continue to stir rapidly; then add 3ml of TEOS dropwise, and stir vigorously at 35°C for 24h; 2 h 5 OH and distilled water were washed three times.

[0042] (2) Disperse the washed white sample in 450ml distilled water, put the dispersed solution in a constant temperature water tank and keep it warm at 30°C for 18 hours to prepare nano-SiO with uniform structure 2 hollow ball.

[0043] (3) by wet chemical method on SiO 2 The surface of the inner shell of the nano hollow sphere is coated with a layer of organic matter and the organic matter is embedded in the shell wall. The specific steps are: put 1g of SiO 2 The hollow spheres were ultrasonically dispersed in 250ml of distilled water, 2g of triblock copolymer was added, followed by 2g of Tris, stirred vigorously to clarify the solution, ...

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Abstract

The invention relates to a high-specific surface area nanometer mesoporous silicon carbide hollow ball and a preparation method thereof. The preparation method comprises dropwisely adding different amounts of silica precursor tetraethoxysilane into water-anhydrous ethanol mixed solutions with different ratios so that the silica precursor tetraethoxysilane is hydrolyzed into silica solid nanospheres with different diameters, dispersing the silica solid nanospheres in distilled water with different volumes, carrying out thermal insulation for a certain time to obtain nanometer mesoporous silicon carbide hollow balls with different diameters are obtained, coating the inner and outer shells of the nanometer mesoporous silicon carbide hollow ball with an organic matter layer so that the organic matter is insert into the shell walls, carrying out carbonization, mixing the reaction product, magnesium powder and a metal salt to obtain a uniform mixture, and carrying out thermal insulation in an inert atmosphere for some hours to obtain nanometer mesoporous silicon carbide hollow balls with uniform structures and adjustable sizes. The preparation method has a low reaction temperature and a low cost. The obtained hollow silicon carbide has the advantages of uniform structure, adjustable sizes, superhigh specific surface area of 648m<2> / g and excellent mesoporous structure.

Description

technical field [0001] The invention belongs to the technical field of nano functional materials. Specifically relates to a high specific surface area nano mesoporous silicon carbide hollow sphere and a preparation method thereof. Background technique [0002] Silicon carbide (SiC) material has excellent properties such as high temperature resistance, acid and alkali corrosion resistance and high mechanical strength, and has a high band gap, high critical breakdown electric field and high thermal conductivity, small dielectric constant And high electron saturation mobility, so it has excellent mechanical, chemical, thermal, electrical properties, and has the characteristics of radiation resistance, radioactivity, and wave absorption. It is an important nuclear reactor neutron radiation resistant material and wave absorbing stealth Materials and high-performance structural ceramic materials, which are also ideal materials for electronic and optoelectronic devices, are genera...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/36B82Y40/00B82Y30/00
Inventor 霍开富高标安威力付继江曾宪刚魏哲彭祥
Owner 湖北朗驰新型材料有限公司
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