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Fabricating method for graphene nanometer wall based on electromagnetic field reinforced plasma chemical vapor deposition

A graphene nanowall, chemical vapor deposition technology, applied in gaseous chemical plating, hybrid/electric double layer capacitor manufacturing, hybrid capacitor electrodes, etc., can solve the limited improvement of surface area, small effective surface area, and poor graphene wall structure. and other problems, to achieve the effect of improving specific capacitance and conductivity, increasing surface area, and improving dispersion.

Active Publication Date: 2016-04-13
GUANGZHOU MOXI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the structure of the graphene wall prepared by simple plasma chemical vapor deposition is poor, the distance between the walls is relatively large, and there is no additional graphene bifurcation on the graphene wall, so the improvement of the surface area is limited.
In addition, the graphene nanowall without surface modification has no hydrophilic and lipophilic properties, and subsequent use of liquid (such as electrolyte) cannot infiltrate the interior of the nanowall, resulting in a very small effective surface.

Method used

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  • Fabricating method for graphene nanometer wall based on electromagnetic field reinforced plasma chemical vapor deposition
  • Fabricating method for graphene nanometer wall based on electromagnetic field reinforced plasma chemical vapor deposition
  • Fabricating method for graphene nanometer wall based on electromagnetic field reinforced plasma chemical vapor deposition

Examples

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Effect test

Embodiment 1

[0045] Using silicon wafers as substrates, PECVD is used to prepare graphene nanowalls, and 5nm gold nanofilms are grown on silicon wafers.

[0046] Step 1: grow one deck gold nano film on Si substrate by the mode of thermal evaporation, and its thickness is 5 nanometers.

[0047] Step 2: in step 1, the substrate of the gold nanofilm was deposited in the protective gas N 2 Heat treatment at 600-900 degrees Celsius for 2 hours; Figure 4 As shown, through the dewetting of the gold nano film, gold nanoparticles (clusters) are formed on the surface of the substrate, the size of which is 2-10 nanometers.

[0048] Step 3: Preparation of graphene nanowall: with CH 4 The plasma of the gas is used as a precursor, and the substrate obtained in step 2 is heated to 650-1000 degrees Celsius in a PECVD reactor; the graphene nano-wall is grown on the substrate by the PECVD method, and at the same time, as figure 2 As shown, a voltage U is applied in the vertical direction around the sub...

Embodiment 2

[0052] Using copper sheets as substrates, PECVD is used to prepare graphene nanowalls. A 10 nm gold nanofilm was grown on a silicon wafer.

[0053] Step 1: grow a layer of gold nano film on Si substrate by magnetron sputtering mode, its thickness is 10 nanometers.

[0054] Step 2: the substrate described in step 1 has deposited the gold nano film in protective gas (N 2 , Ar) heat treatment at 600-900 degrees Celsius for 2h. Such as Figure 4 As shown, through the dewetting of the gold nano film, gold nanoparticles (clusters) are formed on the surface of the substrate, the size of which is 5-15 nanometers.

[0055] Step 3: Preparation of graphene nanowall: with CH 4 Waiting for the plasma of carbon-containing gas as a precursor, heating the substrate obtained in step 2 to 650-1000 degrees Celsius in a PECVD reactor; growing graphene nanowalls on the substrate by PECVD;

[0056] While the graphene nanowalls are growing, such as figure 2 As shown, a voltage U is applied in...

Embodiment 3

[0061] Using silicon wafers as substrates, PECVD is used to prepare graphene nanowalls. A 20 nm gold nanofilm was grown on a silicon wafer.

[0062] Step 1: grow one deck gold nano film on Si substrate by the mode of ion sputtering, and its thickness is 20 nanometers.

[0063] Step 2: the substrate described in step 1 has deposited the gold nano film in protective gas (N 2 , Ar) heat treatment at 600-900 degrees Celsius for 2h. Such as Figure 4As shown, through the dewetting of the gold nano film, gold nanoparticles (clusters) are formed on the surface of the substrate, and the size is 10-20 nanometers.

[0064] Step 3: Preparation of graphene nanowall: with CH 4 The plasma of carbon-containing gas is used as a precursor, and the substrate obtained in step 2 is heated to 650-1000 degrees Celsius in a PECVD reactor. Grow graphene nanowalls on the substrate by PECVD method;

[0065] While the graphene nanowalls are growing, such as figure 2 As shown, a voltage U is appl...

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Abstract

The invention relates to a graphene nanometer wall based on electromagnetic field reinforced plasma chemical vapor deposition and a fabrication method thereof. The graphene nanometer wall comprises a substrate, a graphene wall array and a plurality of graphene branches, the graphene wall array is vertically grown on the substrate, and the plurality of graphene branches are grown at one side or two sides of a graphene flake. Compared with a traditional technology, the fabrication method has the advantages that the growing speed of the graphene wall is increased by multiple times, no agglomeration and stack among graphene layers are generated, nanopartcile absorption during subsequent preparation of a supercapacitor and a lithium ion capacitor is promoted, and the dispersion of the nanoparticles in the graphene flake is further promoted; meanwhile, the high-specific surface graphene wall and the graphene branches are taken as a medium and templates to grow the nanoparticles, the agglomeration of the nanoparticles in the process of thermal treatment and the subsequent application process can be effectively prevented, and the specific capacitance and the conductivity of the supercapacitor prepared by using the graphene nanometer wall disclosed by the invention can be greatly improved.

Description

technical field [0001] The invention relates to a graphene nano-wall based on plasma chemical vapor deposition enhanced by electromagnetic field and a manufacturing method thereof, belonging to the technical field of electronic materials for energy storage materials and electrical components. Background technique [0002] Graphene is a densely packed single-atom layer of carbon atoms. It was discovered in 2004 by two scientists, Andre Jem and Kostya Novoselov, from the University of Manchester. Good light transmission, electrical conductivity and extremely high mechanical strength have attracted widespread attention at home and abroad. After 6-7 years of development, graphene has considerable research and application in electronic devices, optoelectronics, and energy. Graphene is an ideal carbon-based material for supercapacitors due to its high conductivity and large specific capacity. However, the theoretical capacity of graphene is not high, and stacking is prone to occu...

Claims

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Application Information

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IPC IPC(8): H01G11/36H01G11/24H01G11/26H01G11/86C23C16/513C23C16/26
CPCY02E60/13H01G11/36C23C16/26C23C16/513H01G11/24H01G11/26H01G11/86
Inventor 郝奕舟陈剑豪王天戌
Owner GUANGZHOU MOXI TECH CO LTD
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