High-voltage fast recovery diode chip employing gradient field limiting ring and production technology of high-voltage fast recovery diode chip

Abstract

The invention discloses a high-voltage fast recovery diode chip employing a gradient field limiting ring and a production technology of the high-voltage fast recovery diode chip, and belongs to the field of semiconductor chips. The high-voltage fast recovery diode chip employing the gradient field limiting ring comprises a chip, an N+ cut-off ring, the gradient field limiting ring and a P+ anode, wherein the chip is the fast recovery diode chip; and a chip intercept layer sequentially comprises the chip, the N+ cut-off ring, the gradient field limiting ring and the P+ anode from right to left. The gradient field limiting ring comprises a plurality of field limiting rings of which the widths are gradually reduced from the P+ anode to the N+ cut-off ring; the widths of the field limiting rings are gradually reduced from the P+ anode to the edge of the chip; and the distances between the field limiting rings are gradually increased, so that the targets of linear reduction of a high voltage potential from the P+ anode to the edge of the chip and uniform field distribution are achieved; and the high-voltage fast recovery diode chip has the advantages of uniform field distribution, high breakdown voltage, low switching loss, low leakage current and low reverse power consumption.

Description

technical field [0001] The invention relates to the field of semiconductor chips, in particular to a gradient electric field confinement ring high voltage fast recovery diode chip and a production process thereof. Background technique [0002] Over the years, the turn-off characteristics of PN high-voltage power fast recovery diodes (FRDs) have attracted much attention. How to obtain a diode with short reverse recovery time, high softness and low reverse leakage current is the main goal of device design. In widely used high-speed hardware switching circuits, the softness of switching devices is of particular importance. However, in the conventional device design and manufacturing technology, improving the softness and increasing the switching speed are contradictory. The existing technology utilizes the absorption effect of vacancy defects induced by proton irradiation on platinum atoms to obtain local lifetime control, supplemented by the overall lifetime control technolo...

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Problems solved by technology

[0005] Aiming at the problems existing in the prior art that there are large differences in electric field distribution, low breakdown voltage, large leakage current, large forward conduction voltage, large power consumption, and easy burnout of the pole tube chip, the present invention provides a gradual electric field limiting Ring high-voltage fast recovery diode chip and its production process, it has the advantages of uniform electric field distribution, linear potential change, high breakdown voltage, low switching loss, small leakage current, and small reverse power consumption

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