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A horizontal array of ultra-high-density single-walled carbon nanotubes and its controllable preparation method

A technology of single-walled carbon nanotubes and ultra-high density, applied in the direction of single-walled carbon nanotubes, carbon nanotubes, oriented carbon nanotubes, etc., can solve the problem that the density does not meet the requirements, the length of carbon nanotubes, and the parallel arrangement of surface cleanliness Insufficient flatness and other problems, to achieve the effects of simple sample preparation, controllable preparation, and broad application prospects

Active Publication Date: 2018-04-06
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For the direct growth method, the reported density still does not meet the requirements; for the post-processing method, the length, surface cleanliness and flatness of parallel arrangement of carbon nanotubes are still slightly insufficient

Method used

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  • A horizontal array of ultra-high-density single-walled carbon nanotubes and its controllable preparation method
  • A horizontal array of ultra-high-density single-walled carbon nanotubes and its controllable preparation method
  • A horizontal array of ultra-high-density single-walled carbon nanotubes and its controllable preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Example 1, Growth of ultra-high-density single-walled carbon nanotube horizontal arrays

[0053] 1) Pretreatment of single crystal growth substrate;

[0054] Select the a-face α-alumina single crystal substrate as the substrate for carbon nanotube growth, cut it into a size of 4 mm × 6 mm, the side with a length of 4 mm is parallel to the [0001] direction, and the side with a length of 6 mm is parallel to the [1-100] direction. This substrate is pretreated as follows:

[0055] Sequentially ultrasonic cleaning in secondary water, acetone, ethanol and secondary water for 10 minutes, and then drying with high-purity nitrogen, the surface morphology is as follows: figure 2 a) as shown.

[0056] Put the cleaned substrate into the muffle furnace, raise the temperature from room temperature to 1100°C within 2 hours, keep the temperature at 1100°C for 8 hours, then cool down to 300°C within 10 hours, and then naturally cool down to room temperature to obtain the pretreated ...

Embodiment 2

[0068] Embodiment 2, growing ultra-high-density single-walled carbon nanotube horizontal arrays;

[0069] Step 1) is the same as embodiment 1 step 1;

[0070] Step 2) and 3) Fe(OH) used in embodiment 1 3 / EtOH solution was replaced by (NH 4 ) 6 Mo 7 o 4 The concentration is 0.01mmol / L (NH 4 ) 6 Mo 7 o 4 / EtOH solution, and then according to step 3) of Example 1, spin-coat on the a-face α-alumina single crystal substrate, that is, the surface of the a-face α-alumina single-crystal substrate is loaded with a Mo-containing catalyst.

[0071] 4) Annealing

[0072] Place the substrate in a muffle furnace, anneal at high temperature in air, rise from room temperature to 1000°C within 1.5 hours, keep the temperature at 1000°C for 16 hours, then cool down to 300°C within 10 hours, and then naturally cool down to room temperature to complete the annealing step;

[0073] 5) Directional growth of single-walled carbon nanotubes by chemical vapor deposition:

[0074] Place the ...

Embodiment 3

[0076] Embodiment 3, the mechanism analysis of the preparation method of ultra-high-density single-walled carbon nanotube horizontal array;

[0077] 1) Analysis and verification of the fusion mechanism in the preparation method of ultra-high-density single-walled carbon nanotube horizontal arrays;

[0078] The single crystal growth substrate after the annealing of step 4) in embodiment 1 is carried out XPS depth analysis, as Figure 5 As shown, there is Fe element found on the surface of the alumina single crystal substrate. Obviously, the Fe catalyst can indeed enter the alumina single crystal substrate and store it through the above annealing method.

[0079] 2) Analysis and verification of the release mechanism in the preparation method of ultra-high-density single-walled carbon nanotube horizontal arrays;

[0080] The single crystal growth substrate obtained in step 4) of Example 1 was placed in a tube furnace for hydrogen annealing treatment, the hydrogen flow rate was 1...

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Abstract

The invention discloses a horizontal array of ultra-high-density single-wall carbon nanotubes and a preparation method thereof. The method comprises the following steps: loading a catalyst on a single crystal growth substrate, and after annealing, passing hydrogen gas into a chemical vapor deposition system to carry out the reduction reaction of the catalyst, and maintaining the flow of hydrogen gas to carry out orientation of single-walled carbon nanotubes Grow and get. The method prepares a horizontal array of ultra-high-density single-walled carbon nanotubes with a density exceeding 130 pieces / micron, which is the horizontal array of single-walled carbon nanotubes with the highest direct growth density reported in the world. The electrical performance test of the ultra-high-density single-walled carbon nanotube horizontal array prepared by the present invention shows that the on-current density reaches 380 μA / μm, and the transconductance reaches 102.5 μS / μm, which are the highest among carbon nanotube field effect transistors in the world at present. Level.

Description

technical field [0001] The invention belongs to the field of semiconductors, and relates to a horizontal array of ultra-high-density single-wall carbon nanotubes and a controllable preparation method thereof. Background technique [0002] Single-walled carbon nanotubes (SWNTs) have attracted great attention of nanotechnology workers since their discovery in 1993 due to their special structure and excellent performance. It has high toughness, strong conductivity, excellent field emission performance, both metallic and semiconductor properties, known as "super fiber", and is considered to be one of the main materials in nanoelectronic devices in the post-Moore era. Currently, the potential applications of SWNTs are extensively studied, including quantum wires, electronic devices, composite materials, electroluminescence, photoluminescence, chemical sensors and nanoparticle carriers, etc. [0003] For the chip industry, traditional transistors are based on silicon. However, wi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/159C01B32/162B82Y30/00H10K99/00
CPCC01B2202/08C01B2202/22C01B32/162B82Y10/00C30B29/60B82Y30/00B82Y40/00C01B2202/02C30B25/186C30B29/02Y10S977/75Y10S977/843Y10S977/938H10K85/221H10K10/484H10K10/464H10K10/488H10K71/10B05D1/005B05D1/60B05D3/007B05D3/0406B05D3/0453C23C16/0272C23C16/26C23C16/45512C30B29/20C30B31/04
Inventor 张锦胡悦康黎星赵秋辰张树辰
Owner PEKING UNIV
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