High-density semiconductive single-walled carbon nanotube horizontal array and preparation method thereof

A single-walled carbon nanotube, semiconductor technology, applied in the field of high-density semiconducting single-walled carbon nanotube horizontal array and its preparation, can solve the problem of inability to obtain high-density semiconducting single-walled carbon nanotube horizontal array, density drop, etc. problems, to achieve the effect of low cost, good repeatability and broad application prospects

Active Publication Date: 2016-06-01
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the key problem currently restricting the application of single-walled carbon nanotubes in the field of nanoelectronic devices, especially in large-scale integrated circuits, is the inability to obtain high-density semiconducting single-walled carbon nanotube horizontal arrays
The current state of preparation of the existing single-walled carbon nanotube horizontal array is that the actual density of single-walled carbon nanotubes per micron does not exceed 50, and there is no selectivity for metallicity and semiconductivity. If the growth conditions of semiconductive single-walled carbon nanotubes are introduced , the density tends to drop substantially

Method used

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  • High-density semiconductive single-walled carbon nanotube horizontal array and preparation method thereof
  • High-density semiconductive single-walled carbon nanotube horizontal array and preparation method thereof
  • High-density semiconductive single-walled carbon nanotube horizontal array and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0044] 1) Use a pipette gun to pipette 34 μL of tetrabutyl phthalate and 61 μL of ethanolamine and dissolve them in 150 mL of absolute ethanol solution, stir well, and dissolve the mixed solution of ethanol and ultrapure water (50 mL of ethanol, 9 μL of ultrapure water) Add dropwise to the above mixed solution, and continue to stir to obtain a transparent sol with a titanium element concentration of 0.5 mmol / L.

[0045] 2) Dip a small amount of the above TiO 2 Sol, using the microcontact printing method to prepare linear patterned catalyst strips on the ST-cut quartz single crystal substrate, and the direction of the strips is perpendicular to the lattice direction of the substrate surface. Put the catalyst-loaded substrate into a chemical vapor deposition system, raise the temperature to 800°C, and calcinate in air for 20 minutes to obtain TiO 2 For nanoparticles, 300 sccm argon gas was introduced for 5 minutes to exhaust the air in the system, and then ethanol was bubbled w...

Embodiment 2

[0047] 1) Prepare titania sol according to the method of Example 1, spin-coat it on the α-alumina surface a, place the substrate spin-coated with the catalyst in a muffle furnace, anneal in air at 1100°C for 8h, then cool down to 300°C for 10h , and then cooled naturally to room temperature.

[0048] 2) Put the above catalyst-loaded and annealed alumina substrate into a chemical vapor deposition system, raise the temperature to 850°C, calcine in air for 20 minutes, pass 300 sccm argon gas into it for 5 minutes, then bubble ethanol with 150 sccm argon gas, and pass through 300sccm hydrogen gas, grown at a growth temperature of 850° C. for 30 minutes to prepare a horizontal array of high-density semiconducting single-walled carbon nanotubes.

[0049] High-resolution scanning electron microscopy (SEM) and atomic force microscopy (AFM) characterize its density to 60-80 roots / micron, such as image 3 , Figure 4 shown. Its Raman spectrum is as Figure 5 a and 5b( Figure 5 a s...

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Abstract

The invention discloses a high-density semiconductive single-walled carbon nanotube horizontal array and its preparation method. The array method is a first method or a second method. The first method comprises the following steps: loading a single crystal growth substrate I with a solution of oxide nanoparticles, airing and calcining in the air atmosphere, and carrying out chemical vapor deposition so as to obtain the array on the substrate I. The second method comprises the following steps: loading a single crystal growth substrate II with a solution of oxide nanoparticles, airing and annealing, calcining in the air atmosphere, and carrying out chemical vapor deposition so as to obtain the array on the substrate II. Problems of low density, strong etching, many defects and the like existing in present prepared semiconductive single-walled carbon nanotube horizontal arrays are overcome. The method of the invention is simple and easy to control, is low-cost, has good repeatability, has no metal catalyst residue, and has a wide application prospect in high-end fields of nano-electronics devices, biological medicine and catalytic synthesis, etc.

Description

technical field [0001] The invention belongs to the field of semiconductors, and relates to a horizontal array of high-density semiconductor single-wall carbon nanotubes and a preparation method thereof. Background technique [0002] Single-walled carbon nanotubes have a perfect conjugated structure and excellent physical properties, and have always been a research hotspot in the field of nanoscience, and are also considered to be the main materials in nanoelectronic devices in the post-Moore era. Single-walled carbon nanotubes are one-dimensional nanomaterials formed by curling graphene according to a certain vector direction, and can be divided into metallic and semiconducting properties according to different structures. Due to the excellent electrical, optical, and mechanical properties of single-walled carbon nanotubes, they have broad application prospects in many fields such as nanoelectronic devices, energy conversion, biosensing, and composite materials. However, t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/02B82Y30/00
Inventor 张锦康黎星胡悦赵秋辰张树辰
Owner PEKING UNIV
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