Method for electrochemical etching of surface of copper zinc tin sulfide thin film material without water

A technology of copper-zinc-tin-sulfur and thin-film materials, which is applied in the field of solar cells, can solve problems such as high cost and serious environmental pollution, achieve low production cost, wide electrochemical window, and facilitate the promotion of industrialization

Active Publication Date: 2016-06-01
CHENGDU SCI & TECH DEV CENT CHINA ACAD OF ENG PHYSICS
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The main purpose of the present invention is to provide a method for anhydrous electrochemical etching of the surface of copper-zinc-tin-sulfur thin film materials for the deficiencies of the prior art, and the problems of serious environmental pollution and high cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for electrochemical etching of surface of copper zinc tin sulfide thin film material without water
  • Method for electrochemical etching of surface of copper zinc tin sulfide thin film material without water
  • Method for electrochemical etching of surface of copper zinc tin sulfide thin film material without water

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] Example 1 This example is an anhydrous electrochemical method for etching the surface of a copper-zinc-tin-sulfur film

[0043] Metal Mo with a thickness of 1 μm is deposited on the soda-lime glass substrate as a back electrode, and a copper-zinc-tin-sulfur thin film with a thickness of 1-2 μm is deposited on the Mo layer 4 by electrochemical deposition, which is a prefabricated layer.

[0044] Step (1): The copper-zinc-tin-sulfur thin film material is selenized in a constant temperature tubular annealing furnace, and then placed on the electrochemical workstation, only the substrate 3 and the Mo4 back electrode are connected to the working electrode of the electrochemical workstation 1; Soak in ethanol for 1-2 minutes, remove surface particles and impurities, and blow dry with high-purity nitrogen;

[0045] Step (2) Prepare treatment solution 7. Anhydrous sodium chloride was dissolved in choline chloride and urea solution with a mass ratio of 1:2, and the concentratio...

Embodiment 2

[0048] Embodiment 2 This embodiment is an anhydrous electrochemical method to etch the surface of the copper-zinc-tin-sulfur thin film

[0049] Metal Mo with a thickness of 1 μm is deposited on the soda-lime glass substrate as a back electrode, and a copper-zinc-tin-sulfur thin film with a thickness of 1-2 μm is deposited on the Mo layer 4 by electrochemical deposition, which is a prefabricated layer.

[0050] Step (1): The copper-zinc-tin-sulfur thin film material is selenized in a constant temperature tubular annealing furnace, and then placed on the electrochemical workstation, only the substrate 3 and the Mo4 back electrode are connected to the working electrode of the electrochemical workstation 1; Soak in ethanol for 1-2 minutes, remove surface particles and impurities, and blow dry with high-purity nitrogen;

[0051] Step (2) Prepare treatment solution 7. Anhydrous potassium chloride was dissolved in choline chloride and urea solution with a mass ratio of 1:3, and the ...

Embodiment 3

[0054] Embodiment 3 This embodiment is an anhydrous electrochemical method to etch the surface of the copper-zinc-tin-sulfur thin film

[0055] Metal Mo with a thickness of 1 μm is deposited on the soda-lime glass substrate as a back electrode, and a copper-zinc-tin-sulfur thin film with a thickness of 1-2 μm is deposited on the Mo layer 4 by electrochemical deposition, which is a prefabricated layer.

[0056] Step (1): The copper-zinc-tin-sulfur thin film material is selenized in a constant temperature tubular annealing furnace, and then placed on the electrochemical workstation, only the substrate 3 and the Mo4 back electrode are connected to the working electrode of the electrochemical workstation 1; Soak in ethanol for 1-2 minutes, remove surface particles and impurities, and blow dry with high-purity nitrogen;

[0057] Step (2) Prepare treatment solution 7. Anhydrous magnesium chloride was dissolved in choline chloride and urea solution with a mass ratio of 1:2.5, and th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the technical field of solar cells, and specifically discloses a method for electrochemical etching of the surface of a copper zinc tin sulfide thin film material without water. The method specifically includes the steps of: after placing a copper zinc tin sulfide thin film material in a quartz tube type furnace for selenylation or sulfuration, placing the copper zinc tin sulfide thin film material in an electrochemical workstation, and only connecting a substrate and Mo with a working electrode; preparing a mixed solution of 0.001 to 1M/L anhydrous chloride salt and ionic liquid, the ionic liquid being prepared by mixing choline chloride and urea in a mass ratio of 1 : (0.1~3); and performing heating treatment on the solution, applying an electrical signal, and taking out the solution after treating for 1 to 600 seconds, the electrical signal being any one of a cyclic voltammetry electrical signal, a constant voltage electrical signal, a constant current electrical signal, a pulse voltage electrical signal or a pulse current electrical signal. The method provided by the invention can perform selective corrosion on a copper zinc tin sulfide surface, removes a copper selenide secondary phase (CuxSe) on the surface of the copper zinc tin sulfide thin film, avoids a nonuniform phenomenon brought by absorption layer surface corrosion due to chemical etching in a water solution, is environment-friendly, and is easy to operate.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a method for anhydrous electrochemical etching of the surface of a copper-zinc-tin-sulfur film material. Background technique [0002] Solar energy is the most abundant energy among many renewable energy sources. The energy of global sunlight for one hour is equivalent to the energy consumption of the earth for a year, which is much higher than wind energy, geothermal energy, hydropower, ocean energy, biomass energy and other energy sources. The proportion of solar energy in the future energy structure will increase, and it is conservatively estimated that this proportion will exceed 60% in 2100. Therefore, solar cell research is an important topic for future energy development. [0003] Copper zinc tin sulfur (CuZn x sn y S z , can also include selenium Se, abbreviated as CZTS) is a derivative of copper indium gallium selenium CIGS, the crystal structure is similar to th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 叶勤燕张永政廖成刘江何绪林刘焕明梅军
Owner CHENGDU SCI & TECH DEV CENT CHINA ACAD OF ENG PHYSICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap