Potassium titanate whisker toughened silicon carbide-based ceramic circuit board substrate material and preparation method thereof

A potassium titanate whisker and silicon carbide-based technology, which is applied in the field of silicon carbide ceramics preparation, can solve the problems of high production cost, low sintering density, and low thermal conductivity, and achieve strong wettability and bonding ability, sintering The effect of high density and lower sintering temperature

Inactive Publication Date: 2016-08-03
岳西县吉奥电子器件有限公司
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] As the power and density of electronic components increase, the calorific value per unit volume also increases, and the requirements for the comprehensive performance of circuit substrates are getting higher and higher. Among them, ceramic substrates have good comprehensive performance in terms of insulation, thermal conductivity and Thermal expansion, chemical stability and other aspects are outstanding, and are gradually widely used in substrate materials. Among them, alumina and beryllium oxide are mainly used as substrate materials for a long time. However, alumina ceramic sheets have low thermal conductivity and thermal expansion. The coefficient does not match with Si and other shortcomings. Although the comprehensive performance of beryllium oxide ceramics is relatively good, its production cost is high and toxic. Although the comprehensive performance of aluminum nitride ceramics is relatively good, the production cost is high and the application is also limited. Silicon carbide as a substrate material has obvious advantages in terms of performance
[0003] Although the application prospects of silicon carbide ceramic substrates are broad, in the actual production process, there are problems such as low sintering density, low utilization rate of raw materials, and insulation to be improved, which restrict the large-scale use of such materials. Further improvements in the production process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] The ceramic substrate material is made of the following raw materials in parts by weight: silicon carbide 65, fluorite 5, potassium titanate whisker 2, nano-spherical alumina 10, silane coupling agent kh5501, glycerin 8, ethylene glycol 5, polyethylene Glycol 1, nano ceramic powder transparent liquid 10, deionized water 50.

[0012] Its preparation method is:

[0013] (1) First disperse silicon carbide and fluorite by ball milling for 12 hours, then add nano-spherical alumina, potassium titanate whiskers, and silane coupling agent kh550 to continue mixing and ball milling for 3 hours, then add other remaining materials, and disperse by closed mixing ball mill for 4 hours. Pass the 200 mesh sieve after the gained slurry is completely dried;

[0014] (2) Put the above-mentioned sieved powder into a mold for pressing and molding, and the obtained green body is subjected to debinding treatment at 400°C. After the treatment, the green body is sent into a vacuum resistance f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
densityaaaaaaaaaa
bending strengthaaaaaaaaaa
Login to view more

Abstract

The invention discloses a silicon carbide-based ceramic circuit board substrate material toughened by potassium titanate whiskers. The silicon carbide-based ceramic substrate is compounded with micron-sized silicon carbide powder, fluorite, and nanometer-sized spherical alumina micropowder. Use, the sintering temperature of the base material is reduced, the sintering density is higher, and the polyethylene glycol composite solvent containing the transparent liquid of nano-ceramic powder has strong wettability and bonding ability between the powders, which can make the materials evenly dispersed , to achieve effective melting and activation effects, and a high-density, high-gloss composite ceramic substrate can be obtained at a relatively low sintering temperature. It has good electrical insulation, high thermal conductivity, and great application potential.

Description

technical field [0001] The invention relates to the technical field of silicon carbide ceramic preparation, in particular to a silicon carbide-based ceramic circuit board substrate material toughened by potassium titanate whiskers and a preparation method thereof. Background technique [0002] As the power and density of electronic components increase, the calorific value per unit volume also increases, and the requirements for the comprehensive performance of circuit substrates are getting higher and higher. Among them, ceramic substrates have good comprehensive performance in terms of insulation, thermal conductivity and Thermal expansion, chemical stability and other aspects are outstanding, and are gradually widely used in substrate materials. Among them, alumina and beryllium oxide are mainly used as substrate materials for a long time. However, alumina ceramic sheets have low thermal conductivity and thermal expansion. The coefficient does not match with Si and other s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/565C04B35/81C04B35/622
CPCC04B35/565C04B35/622C04B35/803C04B2235/3217C04B2235/3234C04B2235/444C04B2235/483C04B2235/5454C04B2235/77C04B2235/96C04B2235/9607
Inventor 吴前进
Owner 岳西县吉奥电子器件有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products