Gallium nitride growing method based on hexagonal boron nitride and magnetron-sputtered aluminum nitride

A hexagonal boron nitride and magnetron sputtering technology, applied in the field of electronics, can solve the problems of complex process, poor quality of epitaxial gallium nitride, high background carrier concentration, and achieve excellent manufacturing performance, improved material quality, good heat The effect of stability

Active Publication Date: 2016-08-17
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantages of this method are: 1. Using HVPE for homoepitaxy requires metal-organic chemical vapor deposition (MOCVD) to grow gallium nitride films in advance, and the process is complicated.
2. Using hexagonal boron nitride nanosheets, the quality of epitaxial gallium nitride is poor, and the background carrier concentration is high
However, the shortcomings of this method are: 1. Graphen

Method used

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  • Gallium nitride growing method based on hexagonal boron nitride and magnetron-sputtered aluminum nitride
  • Gallium nitride growing method based on hexagonal boron nitride and magnetron-sputtered aluminum nitride

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] Example 1: Ga-plane gallium nitride film based on hexagonal boron nitride and magnetron sputtered aluminum nitride.

[0053] Step 1. Grow a hexagonal boron nitride transition layer.

[0054] The pre-processed silicon substrate is dried and placed in a microwave plasma chemical vapor deposition MPCVD reaction chamber, and then the microwave plasma chemical vapor deposition MPCVD reaction chamber is evacuated, and a small amount of hydrogen is introduced, and the hydrogen flow rate is 50 sccm. Turn on the microwave generator of the MPCVD reaction chamber of the microwave plasma chemical vapor deposition, start to excite and generate plasma, and clean the silicon wafer for 10 minutes. Then pass in nitrogen with a purity of 99.9%, a flow of 150sccm, a purity of 99.9%, a helium with a flow of 150sccm, and a boron fluoride gas with a flow of 50sccm. The boron fluoride gas is composed of 90% nitrogen and 10% boron fluoride. . Increase the working pressure to 6.00kpa, adjust the m...

Embodiment 2

[0066] Example 2: N-plane gallium nitride film based on hexagonal boron nitride and magnetron sputtered aluminum nitride.

[0067] Step A. Growing a transition layer of hexagonal boron nitride.

[0068] The pretreated sapphire substrate is dried and placed in a microwave plasma chemical vapor deposition MPCVD reaction chamber, and then the microwave plasma chemical vapor deposition MPCVD reaction chamber is evacuated, and a small amount of hydrogen is introduced, and the hydrogen flow rate is 50 sccm. Turn on the microwave generator of the MPCVD reaction chamber of the microwave plasma chemical vapor deposition, start to excite and generate plasma, and clean the silicon wafer for 10 minutes. Then pass in nitrogen with a purity of 99.9%, a flow of 150sccm, a purity of 99.9%, a helium with a flow of 150sccm, and a boron fluoride gas with a flow of 50sccm. The boron fluoride gas is composed of 90% nitrogen and 10% boron fluoride. . Increase the working pressure to 6.00kpa, adjust th...

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Abstract

The invention discloses a gallium nitride growing method based on hexagonal boron nitride and magnetron-sputtered aluminum nitride. The method is mainly used for improving the quality of gallium nitride material. The method comprises the following growing steps: (1) growing of a boron nitride transition layer; (2) magnetron sputtering of an aluminum nitride transition layer; (3) heat treatment; (4) growing of an aluminum nitride buffer layer; (5) growing of a gallium nitride layer with a low V-SH ratio; and (6) growing of a gallium nitride layer with a high V-SH ratio. A gallium nitride film formed according to the method has the advantages of combining hexagonal boron nitride and magnetron-sputtered aluminum nitride, having high material quality and a large applicable substrate range and being capable of being used for manufacturing high-performance gallium nitride devices.

Description

Technical field [0001] The invention belongs to the field of electronic technology, and further relates to a gallium nitride growth method based on hexagonal boron nitride and magnetron sputtering aluminum nitride in the field of microelectronic technology. The invention can be used to make gallium nitride film and its devices. Background technique [0002] The third-generation semiconductor represented by gallium nitride has the advantages of large forbidden band width, high breakdown field strength, high thermal conductivity, corrosion resistance and radiation resistance, and has a wide range of applications in the fields of optoelectronic devices and electronic devices. One of the factors that limit the quality and price of GaN-based devices is the substrate material. Due to differences in lattice constants and other physical properties between different materials, the crystal lattice between the substrate material and the gallium nitride single crystal is caused. The mismatc...

Claims

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Application Information

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IPC IPC(8): C23C14/06C23C14/35C23C14/54C23C16/34C23C16/44C23C16/52
CPCC23C14/06C23C14/35C23C14/54C23C16/34C23C16/44C23C16/52
Inventor 张进成庞凯陈智斌吕佳骐朱家铎许晟瑞林志宇宁静张金郝跃
Owner XIDIAN UNIV
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