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Film solar cell buffer layer postprocessing technology

A technology for solar cells and buffer layers, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of low lattice matching, uneven surface, and many floccules on the surface of the buffer layer, and achieves safe operation and process cost. Low, simple and reliable equipment

Inactive Publication Date: 2016-08-31
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a post-treatment process for the thin-film solar cell buffer layer, which is used to solve the problem that the thin-film solar cell buffer layer prepared in the prior art has more flocs on the surface, and the surface is not smooth. Flattening, causing problems with poor lattice matching with the window layer

Method used

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  • Film solar cell buffer layer postprocessing technology
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  • Film solar cell buffer layer postprocessing technology

Examples

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Embodiment 1

[0060] Step 1. Use soda-lime glass as the substrate, perform ultrasonic cleaning, then dry it with pure nitrogen and put it into a magnetron sputtering vacuum chamber, dehydrate and degas, and deposit a double-layer Mo back electrode layer by DC magnetron sputtering, with a thickness of 0.6um;

[0061] Step 2, put the substrate prepared with the Mo back electrode layer into the vacuum chamber, and wait for the vacuum degree to be better than 1×10 -3 After Pa, use CuGa alloy target (Ga content at.25%) and In target to co-sputter to deposit CuInGa (CIG) metal prefabricated layer with a thickness of 0.6um;

[0062] Step 3, put the substrate prepared with the metal prefabricated layer into the selenization furnace, and use H 2 Se was used as a selenium source, selenized at 400°C for 30 minutes, annealed in a nitrogen atmosphere at 580°C for 30 minutes, and then cooled naturally to prepare a CIGS absorbing layer with a thickness of 1.2um;

[0063] Step 4, prepare cadmium iodide s...

Embodiment 2

[0069] Step 1. Soda-lime glass is ultrasonically cleaned, then dried with pure nitrogen and placed in a magnetron sputtering vacuum chamber, dehydrated and degassed, and a double-layer Mo back electrode layer is deposited by DC magnetron sputtering, with a thickness of 0.6um;

[0070] Step 2, put the substrate prepared with the Mo back electrode layer into the vacuum chamber, and wait for the vacuum degree to be better than 1×10 -3 After Pa, use CuGa alloy target (Ga content at.25%) and In target to co-sputter to deposit CuInGa (CIG) metal prefabricated layer with a thickness of 0.6um;

[0071] Step 3, put the substrate prepared with the metal prefabricated layer into the selenization furnace, and use H 2 Se was used as a selenium source, selenized at 400°C for 30 minutes, annealed in a nitrogen atmosphere at 580°C for 30 minutes, and then cooled naturally to prepare a CIGS absorbing layer with a thickness of 1.2um;

[0072] Step 4, configure 1.5umol / L zinc sulfate solution, ...

Embodiment 3

[0078] Step 1. Soda-lime glass is ultrasonically cleaned, then dried with pure nitrogen and placed in a magnetron sputtering vacuum chamber, dehydrated and degassed, and a double-layer Mo back electrode layer is deposited by DC magnetron sputtering, with a thickness of 0.6um;

[0079] Step 2, put the substrate prepared with the Mo back electrode layer into the vacuum chamber, and wait for the vacuum degree to be better than 1×10 -3 After Pa, use CuGa alloy target (Ga content at.25%) and In target to co-sputter to deposit CuInGa (CIG) metal prefabricated layer with a thickness of 0.6um;

[0080] Step 3, put the substrate prepared with the metal prefabricated layer into the selenization furnace, and use H 2 Se was used as a selenium source, selenized at 400°C for 30 minutes, annealed in a nitrogen atmosphere at 580°C for 30 minutes, and then cooled naturally to prepare a CIGS absorbing layer with a thickness of 1.2um;

[0081] Step 4, prepare cadmium iodide solution of 1.5umol / ...

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Abstract

The invention provides a film solar cell buffer layer postprocessing technology. The technology comprises the following steps of providing a film solar cell whose surface is provided with an absorbed layer; configuring a reaction liquid; using a chemical bath deposition method to deposit the reaction liquid on an absorbed layer surface so as to form a buffer layer; and then placing the buffer layer in a water solution so as to carry out soaking processing; and finally taking out and using nitrogen to carry out drying. By using the buffer layer postprocessing technology, buffer layer surface flatness can be improved; buffer layer surface floccules can be reduced; a contact area with an upper layer window layer and lattice matching are increased; recombination of a carrier in a buffer layer / a window layer interface is reduced; a short-circuit current density of the film solar cell can increase 1.0-2.0mA / cm<2>; and a cell conversion efficiency absolute value can increase 1-3%. Because ammonia water, isopropanol, ammonium acetate and the like which are used for soaking treatment are conventional reagents and can be recycled, technological cost is low, equipment is simple and reliable and operation is safe, and the technology is suitable for industrial production.

Description

technical field [0001] The invention belongs to the technical field of new energy sources of photovoltaic materials, and in particular relates to a post-treatment process of a buffer layer of a thin-film solar cell. Background technique [0002] Copper Indium Gallium Selenide (Cu(In,Ga)Se 2 : CIGS) thin-film solar cell is one of the most promising thin-film solar cells with the highest conversion efficiency in the laboratory. It has an adjustable optical gap, which is suitable for adjusting and optimizing the gap width; it has a very high light absorption coefficient, and the solar cells prepared are only a few microns, which reduces the consumption of raw materials and the weight of the battery; the battery has a long service life, There is no light-induced degradation effect, and the performance is still good under weak light conditions. It also has very good anti-interference and anti-radiation capabilities in space applications. In 2014, the German Solar Energy and Hyd...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/186H01L31/1864Y02E10/50Y02P70/50
Inventor 柳效辉韩安军王宪黄勇亮孟凡英刘正新
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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