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A thin film used for thermoelectric power generation devices under strong irradiation environment and its preparation method

A technology of thermoelectric power generation and strong irradiation, which is applied in the manufacture/processing of thermoelectric devices, materials for lead-out wires of thermoelectric devices, vacuum evaporation coating, etc., can solve the problems of no relevant introduction of thin films, and achieve low cost and high efficiency High and stable effect

Active Publication Date: 2019-01-22
MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Regarding uranium-based compounds, currently the main researches are uranium-oxygen compounds and uranium-boron compounds. There is no related introduction about the thin films made of uranium-oxygen-nitride thermoelectric materials.

Method used

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  • A thin film used for thermoelectric power generation devices under strong irradiation environment and its preparation method
  • A thin film used for thermoelectric power generation devices under strong irradiation environment and its preparation method
  • A thin film used for thermoelectric power generation devices under strong irradiation environment and its preparation method

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preparation example Construction

[0029] The concrete preparation method of this thin film comprises the following steps:

[0030] (1) Take high-purity metal uranium flakes, pretreat the metal uranium flakes, and nitride the treated metal uranium to make uranium nitrogen oxides on the surface of the metal uranium flakes;

[0031] (2) Magnetron sputtering deposition of uranium nitride oxide produced on the surface of metal uranium flakes onto the substrate surface of an electrical insulator, thereby obtaining uranium nitride thermoelectric materials, and then making uranium nitride thermoelectric materials into thin films.

Embodiment 1

[0033] In this embodiment, it is further preferred to use the main chemical composition as U 2 N 3 o x The thermoelectric material is used as the main material of the film. The physical properties of the thermoelectric material, such as figure 1 , figure 2 , image 3 As shown, it has a large thermoelectric coefficient (92~138 μV / K) in the temperature range of 243~383 K, and has a very low resistivity in this temperature range (2.31×10-5Ωm ~3.94×10-5Ωm ), its power factor reaches up to 4.83 μWcm-1K-2 at 383 K, which is higher than that of uranium-oxygen system and uranium-boron system, and its performance is comparable to that of mature oxide thermoelectric materials. Therefore by U 2 N 3 o x Thin films made of thermoelectric materials also have these properties, and can realize functions such as cooling and thermoelectric power generation in a special radiation-resistant environment, and are used for thermoelectric power generation devices in strong radiation environm...

Embodiment 2

[0035] The present embodiment provides the concrete steps of preparing this thin film, as follows:

[0036] 1) Mechanically grind high-purity metal uranium flakes to No. 2000 sandpaper, then polish them with 0.1 μm diamond polishing paste, wash them with alcohol, acetone, and deionized water several times, then dry them with a hair dryer, and quickly transfer them to in a vacuum chamber with a vacuum of 10 -4 Pa above, followed by 50Pa high-purity nitrogen with a purity of 99.999%. Add -800V pulse high voltage between the high-purity metal uranium sheet and the vacuum chamber, its frequency is 50 kHz, and the duty cycle is 30%, thereby forming a glow discharge, and the ionized nitrogen plasma and the high-purity metal uranium sheet The surface reacts. At the same time as the above process, heat the high-purity metal uranium flake sample at 400°C for 90 minutes to accelerate the diffusion reaction of nitrogen on the surface of the high-purity metal uranium flake, realize the ...

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Abstract

The invention discloses a thin film used for a thermoelectric power generation device in a strong irradiation environment. The main material of the thin film is a uranium nitrogen oxide compound thermoelectric material. The preparation method comprises the following steps: 1) taking high-purity metal uranium flakes, pretreating the metal uranium flakes, and nitriding the treated metal uranium to generate uranium nitrogen oxides on the surface of the metal uranium flakes; 2) making metal uranium The uranium nitride oxide compound formed on the surface of the sheet is deposited on the substrate surface of the electric insulator by magnetron sputtering to obtain the uranium nitride thermoelectric material, and then the uranium nitride thermoelectric material is made into a thin film. The invention adopts uranium nitrogen oxide compound thermoelectric material as the main material of the film, so that the film can realize functions such as refrigeration and thermoelectric power generation in a special radiation-resistant environment, and can be used as a thermoelectric power generation device in a strong radiation environment; its preparation method The method is simple and easy to operate, and the obtained thermoelectric material has stable properties, high efficiency and low cost.

Description

technical field [0001] The invention relates to the technical field of thermoelectric materials, in particular to a thin film used for a thermoelectric power generation device in a strong irradiation environment and a preparation method thereof. Background technique [0002] Thermoelectric materials are a kind of material that can directly realize the mutual conversion of thermal energy and electrical energy by using the Seebeck effect and Peltier effect of the material. The Seebeck effect means that when there is a certain temperature difference between the two ends of the material, a certain electromotive force is generated at both ends. The Peltier effect means that when a certain current passes through the material, both ends of the material will simultaneously absorb heat and release heat, which is the inverse effect of the Seebeck effect. Through the Seebeck effect, thermoelectric materials are widely used in thermal power generation in solar energy, ocean energy and ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/22H01L35/34C23C14/06C23C14/35H10N10/855H10N10/01
CPCC23C14/0641C23C14/35H10N10/855H10N10/01
Inventor 龙重刘静刘柯钊胡殷刘毅谢东华罗志鹏唐凯罗丽珠
Owner MATERIAL INST OF CHINA ACADEMY OF ENG PHYSICS
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