Method for preparing zinc oxide/gallium nitride composite film

A composite film, gallium nitride technology, applied in the field of photocatalysis, can solve the problems of difficult collection and reuse, and achieve the effects of easy reuse, expansion of preparation methods, and obvious visible light response

Active Publication Date: 2016-11-09
NANJING UNIV OF INFORMATION SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The method currently used to prepare ZnO-GaN solid solution is mainly high-temperature solid-phase synthesis, and the product prepared by it is a powder, which is not easy to collect and reuse (Ward, M.J.,

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  • Method for preparing zinc oxide/gallium nitride composite film
  • Method for preparing zinc oxide/gallium nitride composite film
  • Method for preparing zinc oxide/gallium nitride composite film

Examples

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[0023] Example 1

[0024] The sapphire substrate was ultrasonically cleaned in acetone, absolute ethanol and deionized water for 15 minutes, then dried with nitrogen, and placed in a vacuum deposition chamber. The experiment adopts pulsed laser deposition method, and the target materials are high-purity zinc oxide and gallium nitride, which are respectively loaded on target trays with a distance of 30 degrees. Vacuuming by mechanical pump and molecular pump makes the vacuum degree of the deposition chamber reach 5×10 -7 Torr. High-purity nitrogen gas was introduced, and the gas flow rate was 30 sccm. Let stand for a period of time to stabilize the vacuum degree in the deposition chamber to 1.2×10 -2 Torr. The deposited substrate temperature was room temperature (23°C). The laser light source uses a KrF excimer laser with a laser wavelength of 248nm, a frequency of 3Hz, and a laser energy of 220mJ. The laser is focused on the target through an external focusing mirror. The dis...

Example Embodiment

[0028] Example 2

[0029] The substrate deposition temperature in Example 1 was increased from room temperature (23°C) to 50°C and the temperature was kept constant during the deposition process. Figure 4 It is the transmission spectrum of the zinc oxide / gallium nitride composite film prepared when the substrate temperature is 50℃. It can be seen from the figure that the absorption edge of the transmission has a clear blue shift compared with that at room temperature, indicating that the deposition temperature is increased The band gap of the zinc oxide / gallium nitride composite film is improved, and the band gap width is about 1.7 eV after analysis.

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Abstract

The invention discloses a method for preparing a zinc oxide/gallium nitride composite film. The zinc oxide/gallium nitride composite film is prepared at a low temperature through a pulsed laser deposition method, a preparation method for ZnO-GaN composites is expanded, visible light higher than 600 nm can be absorbed, and compared with powder, the ZnO/GaN composite film prepared on a substrate can be repeatedly used more easily. The prepared film is uniform in particle size distribution and has obvious visible-light response, and the band gap reaches 1.6 eV.

Description

technical field [0001] The invention belongs to the technical field of photocatalysis, and in particular relates to a preparation method of a zinc oxide / gallium nitride composite thin film. Background technique [0002] With the development of society, human's demand for energy is constantly increasing, and the resulting energy crisis and environmental problems are the most urgent problems we face. Hydrogen energy is a renewable secondary energy source with the advantages of cleanliness, high energy density, good thermal conductivity, fast reaction speed and diverse storage. The semiconductor material generally used as a photoelectrochemical hydrogen production cell is TiO 2 , ZnO, SrTiO 3 , SiC, GaN, CdS, etc. (Adeli, B. and F. Taghipour, A Review of Synthesis Techniques for Gallium-Zinc Oxynitride Solar-Activated Photocatalyst for Water Splitting. Ecs Journal of Solid State Science and Technology, 2013.2(7): 118-126. ). However, most semiconductor materials have the di...

Claims

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Application Information

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IPC IPC(8): C23C14/28C23C14/06C23C14/08
CPCC23C14/0617C23C14/086C23C14/28
Inventor 咸冯林徐林华郑改革匡文剑李金花曹兆楼裴世鑫赖敏
Owner NANJING UNIV OF INFORMATION SCI & TECH
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