Sn-doped metastable gallium oxide crystal phase film and preparation method and application thereof

A gallium oxide and crystalline phase technology is applied in the field of metastable gallium oxide crystalline phase film and its preparation, which can solve the problems of thin metastable gallium oxide film, poor crystalline quality of gallium oxide, waste of film pollution and resources, etc. Consistent grain orientation, high crystallinity, and broadening the effect of the preparation method

Active Publication Date: 2021-11-02
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The use of MBE and MOCVD methods has the problem of expensive equipment, and the use of MOCVD and RFMS in the film growth process of gallium oxide has poor crystal quality, and it needs to be annealed in an annealing furnace outside the growth equipment to improve the crystallinity, which will inevita

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  • Sn-doped metastable gallium oxide crystal phase film and preparation method and application thereof
  • Sn-doped metastable gallium oxide crystal phase film and preparation method and application thereof
  • Sn-doped metastable gallium oxide crystal phase film and preparation method and application thereof

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preparation example Construction

[0032] One aspect of the embodiments of the present invention provides a method for preparing a Sn-doped metastable gallium oxide crystalline phase film, which includes:

[0033] Provide sapphire as substrate;

[0034] And, using pulsed laser deposition technology, using a Sn-doped gallium oxide ceramic target as a target, epitaxially growing a film on the surface of the substrate, and then annealing to obtain a Sn-doped metastable gallium oxide crystalline film;

[0035] Wherein, the molar percentage of Sn in the target is 0.1-5%;

[0036] The process conditions adopted by the pulse laser deposition technology include: the oxygen pressure is 0.1-200mT, the deposition temperature is 600-900°C, and the pulse laser energy density is 0.5-3J / cm 2 , the pulse laser frequency is 2-10 Hz, and the pulse deposition times are 3000-20000 times.

[0037] In some more specific embodiments, the preparation method includes:

[0038] Place the sapphire as the substrate in the pulsed laser ...

Embodiment 1

[0088] (1) Select the a-side (11-20) sapphire substrate, and dry it with high-purity nitrogen after cleaning;

[0089] (2) Place the substrate in a box furnace for pre-annealing. The pre-annealing temperature is 1000°C, the time is 2h, the atmosphere is air, and the heating rate and cooling rate are set at 10°C / min, so that the substrate is formed flat and uniform. the steps;

[0090] (3) A gallium oxide ceramic target with a Sn doping concentration of 0.5% mole fraction is used;

[0091] (4) Fix the pre-annealed substrate on the substrate holder, put it into the deposition chamber, adjust the distance between the target and the substrate to be 5cm, and evacuate to a vacuum degree of 10 -5 Below Pa;

[0092] (5) Heating the substrate to 800°C at a rate of 20°C / min and keeping it warm for 1800s;

[0093] (6) Adopt a pulsed laser deposition (PLD) system, feed high-purity oxygen, control the gas pressure to 20mT; set the pulsed laser energy density to 1J / cm 2 , the frequency ...

Embodiment 2

[0098] (1) Select the a-side (11-20) sapphire substrate, and dry it with high-purity nitrogen after cleaning;

[0099] (2) Place the substrate in a box furnace for pre-annealing, the pre-annealing temperature is 1000°C, the time is 2h, the atmosphere is air, the heating rate and cooling rate are set at 10°C / min, so that the substrate is formed flat uniform steps;

[0100] (3) A gallium oxide ceramic target with a Sn doping concentration of 1% mole fraction is used;

[0101] (4) Fix the pre-annealed substrate on the substrate holder, put it into the deposition chamber, adjust the distance between the target and the substrate to be 5cm, and evacuate to a vacuum degree of 10 -5 Below Pa;

[0102] (5) Heating the substrate to 800°C at a rate of 20°C / min and keeping it warm for 1800s;

[0103] (6) Adopt a pulsed laser deposition (PLD) system, feed high-purity oxygen, control the gas pressure to 20mT; set the pulsed laser energy density to 1J / cm 2 , the frequency is 5Hz, the pul...

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Abstract

The invention discloses a Sn-doped metastable gallium oxide crystal phase film and a preparation method and application of the Sn-doped metastable-state gallium oxide crystal phase film. The preparation method comprises the following steps: epitaxially growing a film on the surface of sapphire serving as a substrate by adopting a pulsed laser deposition technology and taking a Sn-doped gallium oxide ceramic target as a target material, and carrying out annealing treatment to obtain a Sn-doped metastable gallium oxide crystal phase film, wherein the molar percentage content of Sn in the target material is 0.1-5%. According to the invention, the Sn-doped gallium oxide ceramic target material is adopted, the conversion of the gallium oxide film between alpha and epsilon phases can be stably regulated and controlled, and the preparation method of the gallium oxide metastable crystal phase is broadened; and meanwhile, the prepared metastable gallium oxide film is consistent in grain orientation, high in crystallinity and relatively high in growth rate.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and in particular relates to a Sn-doped metastable gallium oxide crystal phase film and a preparation method and application thereof. Background technique [0002] binary compound Ga 2 o 3 It is a new type of wide-bandgap semiconductor material with six crystal forms, namely α, β, γ, δ, ε and κ phases. where β-Ga 2 o 3 It is a thermally stable phase at high temperature and is the easiest to grow. The researchers aimed at β-Ga 2 o 3 The preparation of thin films and devices is the most widely studied. metastable phase α-Ga 2 o 3 and ε-Ga 2 o 3 , all belong to the hexagonal system (Hexagonal), α-Ga 2 o 3 The band gap is close to 5.3eV, the corresponding wavelength is 230nm, the breakdown field strength is expected to be greater than 10MV / cm, and it has a higher Barrega figure of merit. ε-Ga 2 o 3 The spontaneous polarization characteristics of the catalyst can promote...

Claims

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Application Information

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IPC IPC(8): C30B29/16C23C14/08C23C14/28C30B23/00H01L29/24H01L31/032
CPCC30B29/16C30B23/00C23C14/08C23C14/28H01L29/24H01L31/032
Inventor 章建国张文瑞叶继春王维刘宁涛
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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