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A solution preparation method of cspbi3 thin film and its application in photovoltaic devices

A technology of thin film and solution, which is applied in the field of preparation process of thin film solar cell photovoltaic devices, can solve problems such as easy moisture absorption, limit the development of inorganic perovskite solar cells, and inert photovoltaic performance of devices, and achieve simple preparation methods and avoid expensive vacuum The effect of investing in evaporation equipment and avoiding cumbersome glove box operations

Active Publication Date: 2018-08-03
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But CsPbI 3 It exists stably as a non-perovskite yellow δ phase at room temperature, while the perovskite brown-black α phase that meets the needs of battery devices will quickly transform into a δ phase at room temperature, resulting in rapid inertness of the photovoltaic performance of the device
And usually CsPbI 3 Thin films must be operated in a glove box, and the grains are small, easy to absorb moisture, and will undergo phase transition rapidly in the air environment, which undoubtedly limits the further development of inorganic perovskite solar cells.

Method used

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  • A solution preparation method of cspbi3 thin film and its application in photovoltaic devices
  • A solution preparation method of cspbi3 thin film and its application in photovoltaic devices
  • A solution preparation method of cspbi3 thin film and its application in photovoltaic devices

Examples

Experimental program
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Embodiment 1

[0032] CsPbI in this example 3 The solution preparation method of thin film, comprises the steps:

[0033] 1. CsPbI 3 Preparation of precursor solution: 0.5mmol CsI (129mg) and 0.5mmol PbI 2 (231mg) was added to 2mL DMF (N,N-dimethylamide) and stirred until it was completely dissolved, then 66μL HI (57wt%) was added to aid in dissolution, and the stirring was continued until it was completely dissolved, then left to age for 48hrs to obtain yellow CsPbI 3 Precursor solution, such as figure 2 as shown in (a);

[0034] 2. CsPbI 3 Precursor film preparation: Spin-coat the CsPbI on the FTO glass substrate 3 Precursor solution, the rotation speed is 2000rpm, the spin coating time is 30s, and then placed on a heating plate at 100°C for 10min to obtain CsPbI 3 Precursor thin films, such as figure 2 As shown in (b), while the film is placed in the air, the phase transition occurs rapidly, such as image 3 as shown in (a);

[0035] 3. CsPbI 3 Film preparation: Add 30 mL of iso...

Embodiment 2

[0037] CsPbI in this example 3 Schematic diagram of the structure of inorganic perovskite photovoltaic devices. figure 1 As shown, the FTO conductive glass is used as the substrate, and the electron transport layer, CsPbI, and CsPbI are sequentially deposited on the surface of the FTO film of the FTO conductive glass from bottom to top. 3 The light absorbing layer thin film, the hole transport layer and the top electrode, the specific preparation method is:

[0038] 1. Deposit a dense layer of TiO on the surface of the FTO film of the FTO conductive glass 2 The thin film is used as an electron transport layer: that is, a dense layer of TiO is deposited on the FTO glass (directly purchased) by spin-coating an isopropyl titanate ethanol solution. 2 , and then sintered in air at 450-500°C for 30-60 minutes to obtain a dense layer of TiO 2 thin film; the dense layer of TiO 2 Thin film immersed in 40mM TiCl 4 In an aqueous solution, treat at 70° C. for 30 minutes, and then sin...

Embodiment 3

[0046] In this example, a perovskite solar cell is prepared in the same manner as in Example 2, except that the standing aging time in step 2 is 6 hrs.

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Abstract

The invention discloses a solution preparation method of a CsPbI3 thin film and its application in photovoltaic devices, wherein the solution preparation method of the CsPbI3 thin film is to firstly prepare a CsPbI3 precursor solution through an aging method, then spin-coat and dry to prepare a CsPbI3 precursor thin film, and finally CsPbI3 thin films were prepared by solvent annealing. The invention does not require inert atmosphere protection, and the inorganic perovskite battery prepared under atmospheric conditions has good stability, and the photoelectric efficiency in the early stage has reached 3.19%; at the same time, the process is simple, the cost is low, and it is easy to industrialize, so it is expected to promote inorganic perovskite. The development and application of batteries.

Description

1. Technical field [0001] The present invention relates to a kind of CsPbI 3 The solution preparation method of the film and the application of the photovoltaic device belong to the field of the preparation technology of the photovoltaic device of the thin film solar cell. 2. Background technology [0002] Perovskite cell is a new type of solar cell with perovskite thin film material as the light absorption layer, generally expressed as AMX 3 , where A represents organic and inorganic groups with a cationic radius of 0.164nm to 0.259nm, such as Methylammonium (Ma), Formamidinium (Fa), and cesium Cs. In recent years, organic-inorganic hybrid perovskite solar cells have attracted widespread attention in the photovoltaic industry due to their excellent optoelectronic properties, but they are facing a serious problem, that is, poor thermal stability, which leads to organic-inorganic hybrid perovskite solar cells. However, perovskite solar cells cannot be used in actual product...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/00H01L51/42H01L51/46H01L51/48H10K99/00
CPCH10K71/00H10K71/12H10K85/00H10K30/00H10K2102/00Y02E10/549
Inventor 罗派峰夏伟周圣稳
Owner HEFEI UNIV OF TECH