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Gamma-ray bur itinerant detector based on silicon photoelectric multiplier and digitization time stamping

A silicon photomultiplier and time stamping technology, which is applied in the field of gamma-ray burst inspection instruments, can solve the problems of high background count, promotion restrictions, and fragility of gamma-ray burst inspection instruments, and achieves good universality and practicability. , The structure is flexible and compact, and the cost is low.

Pending Publication Date: 2016-12-07
WUHAN JOINBON TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the large size of the photomultiplier, its fragility, and its low degree of integration and automation, the existing gamma-ray burst detectors have relatively high construction costs.
On the other hand, the background count of the rapidly developing silicon photomultiplier (Si-PhotoMultiplier, hereinafter referred to as SiPM) is too high when it is applied to the gamma-ray burst detector, which limits its promotion in the field of related radiation detection.
[0004] Due to the high cost of existing PMT-based gamma-ray burst detectors and the high background count of SiPM-based gamma-ray burst detectors, it is necessary to propose a low-cost GRB detector with a small background count, more flexible and compact structure, and low cost. Gamma ray burst detector based on silicon photomultiplier and digital time marker to obtain more accurate energy information and event time information

Method used

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  • Gamma-ray bur itinerant detector based on silicon photoelectric multiplier and digitization time stamping
  • Gamma-ray bur itinerant detector based on silicon photoelectric multiplier and digitization time stamping

Examples

Experimental program
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example 1

[0078] Example 1: GRB detector based on silicon photomultiplier and digital time stamp

[0079] List the parameters of this embodiment 1 processing data here:

[0080] The mechanical module used in the module 100 is made of aluminum, the scintillation crystal is lanthanum cerium bromide, the light emitting glass is epoxy resin, and the reflective material is barium sulfate powder;

[0081] The number of sub-pixel modules used in the module 200 in each pixel is N=10;

[0082] The delay time length of the timing circuit module adopted in the module 300 is 16 ns, and the threshold voltage of the threshold chopper circuit is 100 mV;

[0083] The transmission interface used in the module 400 is an Ethernet interface, the clock period is 20 ns, and the spectral energy interval is 5keV.

example 2

[0084] Example 2: GRB detector based on silicon photomultiplier and digital time stamp

[0085] List the parameters of the present embodiment 2 processing data here:

[0086] The material of the mechanical module used in the module 100 is plastic, the scintillation crystal is sodium iodide, the light emitting glass is phenolic resin, and the reflective material is Teflon tape;

[0087] The number of sub-pixel modules used in the module 200 in each pixel is N=15;

[0088] The delay time length of the timing circuit module adopted in the module 300 is 12 ns, and the threshold voltage of the threshold chopper circuit is 120 mV;

[0089] The transmission interface used in the module 400 is a USB interface, the clock period is 50 ns, and the spectral energy interval is 10 keV.

example 3

[0090] Example 3: GRB detector based on silicon photomultiplier and digital time stamp

[0091] List the parameters of the present embodiment 3 processing data here:

[0092] The mechanical module used in the module 100 is made of copper, the scintillation crystal is ytterbium lutetium silicate, the light-emitting glass is quartz glass, and the reflection material is 3M™ Enhanced Specular Reflector (enhanced specular reflection film);

[0093] The number of sub-pixel modules used in the module 200 in each pixel is N=20;

[0094] The delay time length of the timing circuit module adopted in the module 300 is 18 ns, and the threshold voltage of the threshold chopper circuit is 40 mV;

[0095] The transmission interface used in the module 400 is a PCIe interface, the clock cycle is 20 ns, and the spectral energy interval is 50 keV.

[0096] The invention relates to the fields of high-energy physics and particle physics applications, nuclear medicine equipment, and biomedical di...

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Abstract

A gamma-ray bur itinerant detector based on a silicon photoelectric multiplier and digitization time stamping comprises a quantum optics probe module, a SiPM analog signal module, a multiplexer channel coincident circuit module and a flicker pulse signal processing module. According to the gamma-ray itinerant bur itinerant detector, at the earliest stage of photovoltaic conversion, optical signals and analog signals are converted into digital signals, and the digital signals are transmitted to an upper computer or a signal processing unit according to compressed data size. The system can achieve digitization at the earliest stage when an avalanche diode responds photons, and the system has the advantages that the time-space spatial resolution is good, the calculated amount is small, repeatability is good, the adaptability of the system is high, the system is independent of beam characteristics, and the inherent characteristics in beam data can be learned.

Description

technical field [0001] The invention relates to the fields of high-energy physics and particle physics applications, astrophysics equipment and optoelectronics, in particular to a gamma-ray burst detector based on a silicon photomultiplier and a digital time marker. Background technique [0002] A silicon photomultiplier is an array of avalanche diodes operating in counting mode. The micro-units (Mirco-Cell) that make up the array in the device are avalanche diodes that can quickly respond to photons. Since the number of acting photons is greater than 1 in most applications, it is necessary to make avalanche diodes into arrays to respond to different numbers of photons. In a short period of time, the number of cells responding to photons has a monotonic correspondence with the expected number of incoming photons. According to this corresponding relationship, measuring the number of micro-elements can indirectly reflect the current intensity of the incoming photon beam. ...

Claims

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Application Information

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IPC IPC(8): G01T7/00
CPCG01T7/00
Inventor 邓贞宙王麟徐青谢庆国
Owner WUHAN JOINBON TECH CO LTD
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