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Thin film transistor and its manufacturing method, thin film transistor panel and display device

A thin-film transistor and semiconductor technology, which is applied in the manufacture of transistors, semiconductor/solid-state devices, semiconductor devices, etc., can solve the problems of unsuitable preparation of TFT devices, changes in performance parameters, and high carrier concentration, so as to reduce the carrier concentration. , Simplified production process, the effect of high mobility

Active Publication Date: 2020-04-28
TSINGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Studies have found that the mobility of the binary oxide indium zinc oxide (IZO) is much greater than that of the ternary oxide IGZO, but due to its high carrier concentration, and it is easily affected by light and gate voltage during use, the performance parameters will change. Change, that is, poor stability, so it is not suitable for the preparation of TFT devices

Method used

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  • Thin film transistor and its manufacturing method, thin film transistor panel and display device
  • Thin film transistor and its manufacturing method, thin film transistor panel and display device
  • Thin film transistor and its manufacturing method, thin film transistor panel and display device

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preparation example Construction

[0070] see image 3 An embodiment of the present invention provides a method for manufacturing a thin film transistor, including the steps of preparing a semiconductor layer, a source electrode, a drain electrode, a gate electrode, and an insulating layer on an insulating substrate.

[0071] Specifically, the step of preparing the semiconductor layer includes the step of forming an oxide semiconductor film on the substrate by sputtering using the above-mentioned sputtering target.

[0072] Specifically, the preparation method of the sputtering target includes:

[0073] Will In 2 o 3 Powder, CeO 2 The powder and the ZnO powder are uniformly mixed to form a mixture, and the molar ratio of In:Ce:Zn in the mixture is 2:(0.5~2):1; and

[0074] The mixture is sintered at 1250°C to 1650°C.

[0075] In this mixture, the In 2 o 3 Powder, CeO 2 The particle size of the powder and the ZnO powder is preferably less than or equal to 10 microns, more preferably 0.5 microns to 2 micr...

Embodiment 1

[0134] Embodiment 1: sputtering target and preparation method thereof

Embodiment 1-1

[0136] Weigh 209g In with a purity of 4N 2 o 3 Powder, 260g CeO 2 powder and 61g ZnO powder (the molar ratio of the three oxides is In 2 o 3 :CeO 2 :ZnO=1:2:1), put the three powders into a ball mill and mix them. The ball milling medium is selected as absolute ethanol, the ball milling speed is 200 rpm, and the ball milling time is 10 h. After ball milling, dry under the protection of Ar gas with a pressure of 1 atm and a purity of 5N for 1 h. After drying, put the powder into a hot-press sintering furnace, and carry out hot-press sintering in a high-purity Ar gas atmosphere. The sintering pressure is 50 MPa, the sintering temperature is 1350 °C, the heating rate is 15 °C / min, and the sintering time is 5 h. After sintering, the furnace was cooled to room temperature for sampling. The relative density of the target is >87%, and the volume resistance is 0.75Ωcm. The target is used for medium frequency AC magnetron sputtering, the arc is easy to start and the sputtering ...

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Abstract

A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer, and a gate electrode. The drain electrode is spaced from the drain electrode. The semiconducting layer is electrically connected to the drain electrode and the source electrode. The semiconducting layer is an oxide semiconductor film comprising indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of In, Ce, and Zn as In:Ce:Zn is in a range of 2:(0.5 to 2):1. The gate electrode is insulated from the semiconducting layer, the source electrode, and the drain electrode by the insulating layer.

Description

technical field [0001] The invention relates to a thin film transistor and a preparation method thereof, a thin film transistor panel and a display device. Background technique [0002] With the rapid development of information technology, flat panel display technology is developing towards higher resolution, faster response speed, lower energy consumption, fully transparent devices and flexible display, which also has a great impact on active drive display (such as AMLCD, ActiveMatrix Liquid The performance of TFT (thin film transistor) devices in Crystal Display puts forward higher requirements. Due to its low mobility (~0.5cm 2 V -1 the s -1 ) characteristics cannot meet the display requirements of high-resolution, large-size LCD, and more restrict its application in AMOLED (Active Matrix Organic Light Emitting Diode) display. Although the low-temperature polysilicon TFT has high mobility, its production cost is too high, and it is difficult to ensure large-area unifo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L29/24H01L29/66H01L21/02H01L27/12
CPCH01L27/1225H01L29/66969H01L29/7869H01L29/78693H01L21/02565H01L21/02631H01L27/124H01L29/24H01L29/41733H01L29/42384H01L29/66742
Inventor 庄大明赵明曹明杰郭力高泽栋魏要伟
Owner TSINGHUA UNIV