Graphene composite electrode material with excellent electricity storage performance and preparation method thereof

Abstract

The invention discloses a graphene composite electrode material with excellent electricity storage performance. The graphene composite electrode material with the excellent electricity storage performance is prepared by taking graphene, aluminum hydroxide, magnesium carbonate, oxalic acid and ammonium dihydrogen phosphate as main components, adding polyvinylidene fluoride, tetraglycol, polyoxyethylene laurel ether, tricarboxymethylpropane glycidyl ether, coconut oil, phthalate anhydride, triethanolamine salt, a dispersant, a silane coupling agent and an adhesive, and performing processes of ultrasonic dispersion, stirring and mixing, inert gas environment mixing, spray drying, material coating of an electrode and the like. Therefore, the prepared graphene composite electrode material with the excellent electricity storage performance is reliable in performance, excellent in conductive performance and good in electricity storage performance, has no pollution to the environment, can meet the requirements of industry, and has a relatively good application prospect.

Description

technical field

[0001] The invention relates to the technical field of electrode materials, in particular to a graphene composite electrode material with excellent electricity storage performance and a preparation method thereof. Background technique

[0002] In 2004, Andre Geim and Konstantin Novoselov, physicists at the University of Manchester, successfully separated graphene from graphite and confirmed that it can exist alone. Bell Prize in Physics. Before the discovery of boronene in late 2015, graphene was both the thinnest material and the strongest, with a breaking strength 200 times stronger than the best steel. At the same time, it has good elasticity, and the stretching range can reach 20% of its own size. Graphene is currently the thinnest and highest-strength material in nature. Its most potential application is to become a substitute for silicon, to manufacture ultra-miniature transistors, and to produce future supercomputers. Replace silicon with graphene, ...

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