Method for preparing high-performance AZO transparent conductive thin film

A transparent conductive film, high-performance technology, applied in the field of AZO film and transparent conductive oxide film, can solve the problems that are difficult to meet the requirements of practical applications, the improvement of AZO film performance is not uniform, and does not have the conditions for wide promotion, etc., to achieve Realize large-scale industrial production, realize photoelectric conversion efficiency, and enhance the effect of capture

Inactive Publication Date: 2017-02-22
LIAONING UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the improvement of the performance of AZO thin films by various post-treatment processes is not uniform, and they do not have

Method used

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  • Method for preparing high-performance AZO transparent conductive thin film
  • Method for preparing high-performance AZO transparent conductive thin film
  • Method for preparing high-performance AZO transparent conductive thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] (1) Annealing under medium vacuum and using Ar + Preparation of AZO transparent conductive film by backsplash cleaning

[0035] 1) Add 0.06 mol of zinc acetate dihydrate particles into a beaker filled with 100 ml of ethylene glycol methyl ether solvent, and stir at room temperature until completely dissolved. Then added to the solution with Zn 2+ Monoethanolamine in equimolar ratio is used as stabilizer, after stirring evenly, add a certain amount of aluminum nitrate particles nonahydrate to the solution, so that Al 3+ :Zn 2+ =0.02:1 (molar ratio). Next, the beaker was placed in a water bath at 75° C. and stirred at constant temperature for 3 hours to obtain a light yellow, uniform and transparent precursor solution.

[0036] 2) Put the precursor solution open in the air and age for 24 hours to obtain a uniform and stable precursor sol with a certain viscosity.

[0037] 3) Clean the glass substrate (quartz or silicon wafer) ultrasonically with deionized water sever...

Embodiment 2

[0049] 1)-5) The steps are the same as in (1) of Example 1, AZO film is prepared on the substrate by sol-gel spin coating method.

[0050] 6) Put the AZO film prepared by spin coating into the sampling chamber of the magnetron sputtering system, and use a common mechanical pump to pump the sampling chamber to 1 Pa and maintain it. Rapidly raise the temperature to 530°C at a rate of 15°C / min, hold and anneal for 2 hours, and cool down with the furnace.

[0051] 7) After the sample chamber returns to room temperature, inject high-purity argon gas into the sample chamber, ionize and start ignition at a vacuum of 2-5Pa, and then adjust the vacuum to 1Pa to keep the AZO film in the Ar + Clean the film surface for 3 minutes under reverse sputtering.

Embodiment 3

[0053] 1)-5) The steps are the same as in (1) of Example 1, AZO film is prepared on the substrate by sol-gel spin coating method.

[0054] 6) Put the AZO thin film prepared by spin coating into the sampling chamber of the magnetron sputtering system, and use a common mechanical pump to pump the sampling chamber to 100Pa and maintain it. Rapidly raise the temperature to 530°C at a rate of 15°C / min, hold and anneal for 2 hours, and cool down with the furnace.

[0055] 7) After the sample chamber returns to room temperature, inject high-purity argon gas into the sample chamber, ionize and start ignition at a vacuum of 2-5Pa, and then adjust the vacuum to 1Pa to keep the AZO film in the Ar + Clean the film surface for 3 minutes under reverse sputtering.

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PUM

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Abstract

The invention discloses a method for preparing a high-performance AZO transparent conductive thin film. The method comprises three main steps which are respectively a precursor sol preparation step, a thin film preparation step adopting a spin-coating method, and a vacuum annealing and anti-sputtering washing step. The method specifically comprises the following steps: step (1) dissolving a certain amount of octan zinecnaty in an ethylene glycol monomethyl ether solvent or a glycol ether solvent, subsequently adding a stabilizing agent monoethanolamine and doping ions aluminum nitrate nonahydrate into the solution, performing water-bath stirring, and ageing at room temperature to obtain uniform and stable precursor sol; step (2) spin-coating and depositing the precursor wet soil on substrates such as a glass substrate, a quartz substrate and a silicon substrate by adopting a sol-gel spin-coating method, drying and performing low-temperature thermal treatment to obtain an AZO thin film with certain thickness; step (3) firstly annealing the AZO thin film under a medium-vacuum-degree condition and subsequently performing anti-sputtering washing on the surface of the thin film by using Ar<+>. By the three steps, the method disclosed by the invention is capable of obtaining an AZO transparent conductive thin film which is extremely low in resistance rate and quite high in visual light and ultraviolet light penetration rate.

Description

technical field [0001] The invention relates to the technical field of film material preparation, in particular to a transparent conductive oxide film (TCO) with good electrical conductivity and high transmittance in the range of visible light, specifically, a sol-gel method (Sol-Gel method) spin-coated film, and after vacuum annealing and Ar + A method for preparing a high-performance AZO thin film by backsplash cleaning. Background technique [0002] Transparent conductive oxide (TCO) thin films are widely used in optoelectronic devices such as solar cells, flat-panel liquid crystal displays, and light-emitting diodes (LEDs) due to their high transmittance in the visible range, high reflectivity to infrared light, and low resistivity. It shows its broad application prospect. Tin-doped indium oxide film (ITO) is the most widely used TCO film at present, but the indium element in the ITO film is expensive and toxic. At the same time, aluminum-doped zinc oxide film (AZO) h...

Claims

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Application Information

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IPC IPC(8): C23C18/12
CPCC23C18/1216C23C18/1254C23C18/1295
Inventor 王绩伟梅勇卢雪梅范晓星康大为徐攀峰谭天亚刘玉芬李佳
Owner LIAONING UNIVERSITY
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